SEMIKRON SEMIX653GAL176HDS

SEMiX653GAL176HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 150 °C
1700
V
Tc = 25 °C
619
A
Tc = 80 °C
438
A
450
A
ICnom
ICRM
SEMiX® 3s
Trench IGBT Modules
ICRM = 2xICnom
900
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tc = 25 °C
545
A
Tc = 80 °C
365
A
450
A
VGES
tpsc
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
Tj
Inverse diode
IF
SEMiX653GAL176HDs
Tj = 150 °C
IFnom
Features
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2900
A
-40 ... 150
°C
Tc = 25 °C
545
A
Tc = 80 °C
365
A
450
A
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Freewheeling diode
Typical Applications*
IFnom
• AC inverter drives
• UPS
• Electronic welders
Tj
IF
Tj = 150 °C
IFRM
IFRM = 2xIFnom
900
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
2900
A
-40 ... 150
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC = 450 A
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
Tj = 25 °C
2
2.45
V
Tj = 125 °C
2.45
2.9
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
2.2
2.8
mΩ
Tj = 125 °C
VGE(th)
VGE=VCE, IC = 18 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 25 °C
5.2
3.4
4.0
mΩ
5.8
6.4
V
0.1
0.3
mA
Tj = 125 °C
mA
f = 1 MHz
39.6
nF
f = 1 MHz
1.65
nF
f = 1 MHz
1.31
nF
QG
VGE = - 8 V...+ 15 V
4200
nC
RGint
Tj = 25 °C
1.67
Ω
GAL
© by SEMIKRON
Rev. 12 – 16.12.2009
1
SEMiX653GAL176HDs
Characteristics
Symbol
Conditions
td(on)
VCC = 1200 V
IC = 450 A
tr
Eon
td(off)
tf
RG on = 3.6 Ω
RG off = 3.6 Ω
Eoff
Rth(j-c)
®
SEMiX 3s
Trench IGBT Modules
SEMiX653GAL176HDs
Features
rF
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Qrr
Err
Rth(j-c)
rF
Qrr
Err
Rth(j-c)
max.
Unit
290
Tj = 125 °C
90
ns
Tj = 125 °C
300
mJ
Tj = 125 °C
975
ns
Tj = 125 °C
190
ns
Tj = 125 °C
180
mJ
ns
0.054
K/W
Tj = 25 °C
1.7
1.90
V
Tj = 125 °C
1.7
1.9
V
Tj = 25 °C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
Tj = 25 °C
1.3
1.3
1.3
mΩ
Tj = 125 °C
1.8
1.8
1.8
mΩ
IF = 450 A
Tj = 125 °C
di/dtoff = 4200 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 1200 V
per diode
Freewheeling diode
VF = VEC IF = 450 A
VGE = 0 V
chip
VF0
IRRM
typ.
per IGBT
Inverse diode
VF = VEC IF = 450 A
VGE = 0 V
chip
VF0
IRRM
min.
Tj = 125 °C
Tj = 25 °C
380
A
130
µC
73
mJ
1.7
Tj = 125 °C
0.11
K/W
1.9
V
1.7
1.9
V
Tj = 25 °C
0.9
1.1
1.3
V
Tj = 125 °C
0.7
0.9
1.1
V
Tj = 25 °C
1.3
1.3
1.3
mΩ
1.8
1.8
mΩ
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 4200 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 1200 V
per diode
1.8
380
A
130
µC
73
mJ
0.11
K/W
Module
LCE
RCC'+EE'
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.04
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
300
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GAL
2
Rev. 12 – 16.12.2009
© by SEMIKRON
SEMiX653GAL176HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 12 – 16.12.2009
3
SEMiX653GAL176HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 12 – 16.12.2009
© by SEMIKRON
SEMiX653GAL176HDs
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 12 – 16.12.2009
5
SEMiX653GAL176HDs
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
6
Rev. 12 – 16.12.2009
© by SEMIKRON