SEMiX653GAL176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX® 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 545 A Tc = 80 °C 365 A 450 A VGES tpsc VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Tj Inverse diode IF SEMiX653GAL176HDs Tj = 150 °C IFnom Features IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tc = 25 °C 545 A Tc = 80 °C 365 A 450 A • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Freewheeling diode Typical Applications* IFnom • AC inverter drives • UPS • Electronic welders Tj IF Tj = 150 °C IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 450 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 25 °C 2 2.45 V Tj = 125 °C 2.45 2.9 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 2.2 2.8 mΩ Tj = 125 °C VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 5.2 3.4 4.0 mΩ 5.8 6.4 V 0.1 0.3 mA Tj = 125 °C mA f = 1 MHz 39.6 nF f = 1 MHz 1.65 nF f = 1 MHz 1.31 nF QG VGE = - 8 V...+ 15 V 4200 nC RGint Tj = 25 °C 1.67 Ω GAL © by SEMIKRON Rev. 12 – 16.12.2009 1 SEMiX653GAL176HDs Characteristics Symbol Conditions td(on) VCC = 1200 V IC = 450 A tr Eon td(off) tf RG on = 3.6 Ω RG off = 3.6 Ω Eoff Rth(j-c) ® SEMiX 3s Trench IGBT Modules SEMiX653GAL176HDs Features rF • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) max. Unit 290 Tj = 125 °C 90 ns Tj = 125 °C 300 mJ Tj = 125 °C 975 ns Tj = 125 °C 190 ns Tj = 125 °C 180 mJ ns 0.054 K/W Tj = 25 °C 1.7 1.90 V Tj = 125 °C 1.7 1.9 V Tj = 25 °C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 1.3 1.3 1.3 mΩ Tj = 125 °C 1.8 1.8 1.8 mΩ IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 1200 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 IRRM min. Tj = 125 °C Tj = 25 °C 380 A 130 µC 73 mJ 1.7 Tj = 125 °C 0.11 K/W 1.9 V 1.7 1.9 V Tj = 25 °C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 1.3 1.3 1.3 mΩ 1.8 1.8 mΩ Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 1200 V per diode 1.8 380 A 130 µC 73 mJ 0.11 K/W Module LCE RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAL 2 Rev. 12 – 16.12.2009 © by SEMIKRON SEMiX653GAL176HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 12 – 16.12.2009 3 SEMiX653GAL176HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 12 – 16.12.2009 © by SEMIKRON SEMiX653GAL176HDs SEMiX 3s spring configuration © by SEMIKRON Rev. 12 – 16.12.2009 5 SEMiX653GAL176HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 12 – 16.12.2009 © by SEMIKRON