SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX® 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 ... 20 V 6 µs -40 ... 175 °C Tc = 25 °C 771 A Tc = 80 °C 562 A 600 A VGES tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Tj Inverse diode IF SEMiX603GAL066HDs Tj = 175 °C IFnom Features IFRM IFRM = 2xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1800 A -40 ... 175 °C Tc = 25 °C 771 A Tc = 80 °C 562 A 600 A • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Freewheeling diode Typical Applications* IFnom • Matrix Converter • Resonant Inverter • Current Source Inverter Tj IF Tj = 175 °C IFRM IFRM = 2xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1800 A -40 ... 175 °C Tj Module Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.45 1.85 V Tj = 150 °C 1.7 2.1 V VCE0 Tj = 25 °C 0.9 1 V Tj = 150 °C 0.85 0.9 V rCE Tj = 25 °C 0.9 1.4 mΩ IGBT VCE(sat) IC = 600 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 9.6 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 5 1.4 2.0 mΩ 5.8 6.5 V 0.15 0.45 mA Tj = 150 °C mA f = 1 MHz 37.0 nF f = 1 MHz 2.31 nF f = 1 MHz 1.10 nF QG VGE = - 8 V...+ 15 V 4800 nC RGint Tj = 25 °C 0.67 Ω GAL © by SEMIKRON Rev. 17 – 16.12.2009 1 SEMiX603GAL066HDs Characteristics Symbol Conditions td(on) VCC = 300 V IC = 600 A tr Eon td(off) tf RG on = 3 Ω RG off = 3 Ω Eoff Rth(j-c) ® SEMiX 3s Trench IGBT Modules SEMiX603GAL066HDs Features rF • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) max. Unit 150 Tj = 150 °C 145 ns Tj = 150 °C 12 mJ Tj = 150 °C 1050 ns Tj = 150 °C 105 ns Tj = 150 °C 43 mJ ns 0.087 K/W Tj = 25 °C 1.4 1.60 V Tj = 150 °C 1.4 1.6 V Tj = 25 °C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V Tj = 25 °C 0.5 0.7 0.8 mΩ Tj = 150 °C 0.8 0.9 1.1 mΩ IF = 600 A Tj = 150 °C di/dtoff = 3800 A/µs T = 150 °C j VGE = -8 V T j = 150 °C VCC = 300 V per diode Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 IRRM min. Tj = 150 °C Tj = 25 °C 350 A 63 µC 13 mJ 1.4 Tj = 150 °C 0.11 K/W 1.6 V 1.4 1.6 V Tj = 25 °C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V Tj = 25 °C 0.5 0.7 0.8 mΩ 0.9 1.1 mΩ Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 3800 A/µs T = 150 °C j VGE = -8 V T j = 150 °C VCC = 300 V per diode 0.8 350 A 63 µC 13 mJ 0.11 K/W Module LCE RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAL 2 Rev. 17 – 16.12.2009 © by SEMIKRON SEMiX603GAL066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 17 – 16.12.2009 3 SEMiX603GAL066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 17 – 16.12.2009 © by SEMIKRON SEMiX603GAL066HDs SEMiX 3s spring configuration © by SEMIKRON Rev. 17 – 16.12.2009 5 SEMiX603GAL066HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 17 – 16.12.2009 © by SEMIKRON