SEMIKRON SEMIX603GAL066HDS

SEMiX603GAL066HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
600
V
Tc = 25 °C
720
A
Tc = 80 °C
541
A
600
A
ICnom
ICRM
SEMiX® 3s
Trench IGBT Modules
ICRM = 2xICnom
1200
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Tc = 25 °C
771
A
Tc = 80 °C
562
A
600
A
VGES
tpsc
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
Tj
Inverse diode
IF
SEMiX603GAL066HDs
Tj = 175 °C
IFnom
Features
IFRM
IFRM = 2xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1800
A
-40 ... 175
°C
Tc = 25 °C
771
A
Tc = 80 °C
562
A
600
A
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Freewheeling diode
Typical Applications*
IFnom
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Tj
IF
Tj = 175 °C
IFRM
IFRM = 2xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1800
A
-40 ... 175
°C
Tj
Module
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.45
1.85
V
Tj = 150 °C
1.7
2.1
V
VCE0
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.85
0.9
V
rCE
Tj = 25 °C
0.9
1.4
mΩ
IGBT
VCE(sat)
IC = 600 A
VGE = 15 V
chiplevel
VGE = 15 V
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 9.6 mA
ICES
VGE = 0 V
VCE = 600 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 25 °C
5
1.4
2.0
mΩ
5.8
6.5
V
0.15
0.45
mA
Tj = 150 °C
mA
f = 1 MHz
37.0
nF
f = 1 MHz
2.31
nF
f = 1 MHz
1.10
nF
QG
VGE = - 8 V...+ 15 V
4800
nC
RGint
Tj = 25 °C
0.67
Ω
GAL
© by SEMIKRON
Rev. 17 – 16.12.2009
1
SEMiX603GAL066HDs
Characteristics
Symbol
Conditions
td(on)
VCC = 300 V
IC = 600 A
tr
Eon
td(off)
tf
RG on = 3 Ω
RG off = 3 Ω
Eoff
Rth(j-c)
®
SEMiX 3s
Trench IGBT Modules
SEMiX603GAL066HDs
Features
rF
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Qrr
Err
Rth(j-c)
rF
Qrr
Err
Rth(j-c)
max.
Unit
150
Tj = 150 °C
145
ns
Tj = 150 °C
12
mJ
Tj = 150 °C
1050
ns
Tj = 150 °C
105
ns
Tj = 150 °C
43
mJ
ns
0.087
K/W
Tj = 25 °C
1.4
1.60
V
Tj = 150 °C
1.4
1.6
V
Tj = 25 °C
0.9
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
0.5
0.7
0.8
mΩ
Tj = 150 °C
0.8
0.9
1.1
mΩ
IF = 600 A
Tj = 150 °C
di/dtoff = 3800 A/µs T = 150 °C
j
VGE = -8 V
T
j = 150 °C
VCC = 300 V
per diode
Freewheeling diode
VF = VEC IF = 600 A
VGE = 0 V
chip
VF0
IRRM
typ.
per IGBT
Inverse diode
VF = VEC IF = 600 A
VGE = 0 V
chip
VF0
IRRM
min.
Tj = 150 °C
Tj = 25 °C
350
A
63
µC
13
mJ
1.4
Tj = 150 °C
0.11
K/W
1.6
V
1.4
1.6
V
Tj = 25 °C
0.9
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
0.5
0.7
0.8
mΩ
0.9
1.1
mΩ
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 3800 A/µs T = 150 °C
j
VGE = -8 V
T
j = 150 °C
VCC = 300 V
per diode
0.8
350
A
63
µC
13
mJ
0.11
K/W
Module
LCE
RCC'+EE'
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.04
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
300
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GAL
2
Rev. 17 – 16.12.2009
© by SEMIKRON
SEMiX603GAL066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 17 – 16.12.2009
3
SEMiX603GAL066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 17 – 16.12.2009
© by SEMIKRON
SEMiX603GAL066HDs
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 17 – 16.12.2009
5
SEMiX603GAL066HDs
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
6
Rev. 17 – 16.12.2009
© by SEMIKRON