SKM 600GB126D ... .* - $ Absolute Maximum Ratings Symbol Conditions IGBT ' / .* - " / ,*+ - # 2 + # 1++ # 6 .+ / ,.* - ,+ 9 .* - 2;+ # 1+ - <2+ # 1++ # / ,*+ - .11+ # .* - 2;+ # 1+ - <2+ # 1++ # .11+ # *++ # / @ 2+ === A ,*+ - @ 2+ === A ,.* - 2+++ "34.!" ++ 7 5 ) .+ 7 ' 8 ,.++ Inverse Diode ": / ,*+ - ":34 ":34.!": ":'4 ,+ 7 = SKM 600GAL126D Freewheeling Diode ": / ,*+ - ":34 ":34.!": ":'4 ,+ 7 = Preliminary Data ! " Typical Applications # $ %&' $ Remarks "( ) *++# ,++ - / ,*+ - Module ">34'? # , = .* - $ Characteristics Symbol Conditions IGBT 5> ? 5 " , # "' 5 + ' / .* - >? max. Units * *1 * + 5 ,* / .* - , ,. / ,.* - +; ,, / .*- ,1 .2 B / ,.*- .1 <2 B " 2++ # 5 ,* / .*- = .* 5 + # # ,C .,* / ,.*- = . .2* , 4D <. ,, : : .. : E5 5 @1 @ A.+ < ++ 35 / - ,11 F .;+ + <; C+ 1+ G $>? $>? 35 . B 35 . B 1 typ. +. GAL min. / ,.* - + GB 1+ - SKM 600GB126D Features ,.++ + 5' Trench IGBT Module Units .* - "34 SEMITRANS® 3 Values 3 >/@? ++ " 2++# / ,.* - 5 6 ,* 2 "5H 11-09-2006 SEN G ++** IJK © by SEMIKRON SKM 600GB126D ... Characteristics Symbol Conditions Inverse diode : ": 2++ #7 5 + :+ : ® SEMITRANS 3 Trench IGBT Module "334 E ": 2++ # $J$ C ++ #J9 5 @,* 7 ++ 3 >/@?( $$ min. typ. max. Units / .* - = , ,1 / ,.* - = , ,1 / .* - , ,, / ,.* - +1 +; / .* - ,* ,1 B / ,.* - . .< B / ,.* - 2C* ; # 9 2, G +,.* IJK Freewheeling Diode SKM 600GB126D : SKM 600GAL126D :+ Preliminary Data : Features ! " Typical Applications # $ %&' $ Remarks "( ) *++# ,++ - ": 2++ #7 5 + "334 E ": 2++ # $J$ C ++ #J9 5 @,* 7 ++ 3 >/@?:( $$ / .* - = , ,1 / ,.* - = , ,1 / .* - , ,, / ,.* - +1 +; / .* - ,* ,1 / ,.* - . .< / ,.* - 2C* ; # 9 2, G +,.* IJK Module L 3MAM ,* = @ 3 >@? $ 4 N 4 4 4 .+ .* - +<* B ,.* - +* B ++<1 IJK < * O .* * O <.* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 GAL 11-09-2006 SEN © by SEMIKRON SKM 600GB126D ... SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units 3 3 3 3 , . < 2 , . < <1 ,< <2 + ++1< +++; +++.2 NJK NJK NJK NJK 2 ++++. 3 3 3 3 , . < 2 , . < C* <; ;* ,* ++<.C ++,+, +++. NJK NJK NJK NJK 2 ++++< Zth(j-c)D Trench IGBT Module SKM 600GB126D SKM 600GAL126D Preliminary Data Features ! " Typical Applications # $ %&' $ Remarks "( ) *++# ,++ - GB 3 GAL 11-09-2006 SEN © by SEMIKRON SKM 600GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 11-09-2006 SEN © by SEMIKRON SKM 600GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 11-09-2006 SEN © by SEMIKRON SKM 600GB126D ... UL Recognized File no. E 63 532 ( * 5H 6 ( * 5#L ( *C 11-09-2006 SEN © by SEMIKRON