SEMIKRON SKM145GB176D_07

SKM 145GB176D ...
Absolute Maximum Ratings
Symbol Conditions
IGBT
5 3( 4
%
5 7(+ 4
3(4" '
7)++
7#+
&
8+ 4
73+
&
3++
&
: 3+
7+
>
3( 4
7@+
&
8+ 4
7++
&
3++
&
5 7(+ 4
7@++
&
3( 4
7@+
&
8+ 4
7++
&
3++
&
7@++
&
3++
&
5
* @+ ... A7(+
4
* @+ ... A73(
4
@+++
%093$%
1
Trench IGBT Modules
SKM 145GB176D
SKM 145GAL176D
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $
Remarks
- * '
! '
.
/ 01 2
73++ ; 1 < 3+ ; 5 73( 4
= 7)++ Inverse Diode
%?
5 7(+ 4
%?09
%?093$%?
%?9
7+ ; .
Freewheeling Diode
%?
5 7(+ 4
%?09
%?093$%?
%?9
7+ ; .
5 7(+ 4
Module
%09
&" 7 .
Characteristics
Symbol Conditions
IGBT
1
1 " % B"( &
%
1 + " +
1 7( 3(4" '
5 3( 4
'
' 01 7 D
05*
1
%1H
Units
("3
("8
#"@
+"7
+"B
&
7
7"3
7"7
5 3(4
7+
73"(
D
5 73(4
7(
7 9E
1 *8...A7(
01
7 D
max.
+"C
F1
typ.
5 73( 4
%
7++ &" 1 7( 5 3(4.
3(" 1 + min.
5 3( 4
5 73(4.
GB
Units
3( 4
%09
SEMITRANS® 2
Values
73++
% 7++&
5 73( 4
1 : 7( 3
D
3"@(
3"@
)"7
+"B)
?
?
+"3C
?
8++
3(+
B3
#+
#B+
7@(
G
B8
G
+"7C
IJK
GAL
16-11-2007 TGR
© by SEMIKRON
SKM 145GB176D ...
Characteristics
Symbol Conditions
Inverse Diode
? %?
7++ &; 1 + ?+
?
®
SEMITRANS 2
Trench IGBT Modules
%009
F
%? 7++ &
'J' 3@(+ &J>
1 *7( ; 73++ 05*L
''
%?
7++ &; 1 + ?+
SKM 145GAL176D
?
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $
typ.
max.
Units
5 3( 4.
7"#
7"C
5 73( 4.
7"#
7"C
5 3( 4
7"7
7"B
5 73( 4
+"C
7"7
5 3( 4
(
#
D
5 73( 4
)
8
D
5 73( 4
))
BC"(
&
>
3)"(
G
+"B#
IJK
Freewheeling Diode
? SKM 145GB176D
min.
%009
F
%? 7++ &
'J' 3@(+ &J>
1 *7( ; 73++ 05*?L
''
5 3( 4.
7"#
7"C
5 73( 4.
7"#
7"C
5 3( 4
7"7
7"B
5 73( 4
+"C
7"7
5 3( 4
(
#
5 73( 4
)
8
5 73( 4
))
BC"(
&
>
3)"(
G
+"B#
IJK
Module
M
0NAN
B+
." *
0*
'
9
- 9#
9
9(
3( 4
+")(
D
73( 4
7
D
+"+(
IJK
B
(
O
3"(
(
O
7#+
Remarks
- * ' This is an electrostatic discharge sensitive device (ESDS), international standard
! '
.
/ 01 2
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
16-11-2007 TGR
© by SEMIKRON
SKM 145GB176D ...
®
SEMITRANS 2
Trench IGBT Modules
SKM 145GB176D
SKM 145GAL176D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
0
0
0
0
7
3
B
@
7
3
B
77(
B8"(
(")
+"8
+"+B+#
+"+8(3
+"++@
-JK
-JK
-JK
-JK
@
+"+++B
0
0
0
0
7
3
B
@
7
3
B
7C+
8+
3(
(
+"+@)(
+"+7#B
+"++77
-JK
-JK
-JK
-JK
@
+"+++3
Zth(j-c)D
Features
!" # $ %
Typical Applications
& ' ()( *
)(+ &
,! $
Remarks
- * '
! '
.
/ 01 2
GB
3
GAL
16-11-2007 TGR
© by SEMIKRON
SKM 145GB176D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
16-11-2007 TGR
© by SEMIKRON
SKM 145GB176D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
16-11-2007 TGR
© by SEMIKRON
SKM 145GB176D ...
UL Recognized
File no. E 63 532
L #7
1H
6
L #7
1&M
L #3
16-11-2007 TGR
© by SEMIKRON