SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT ) 3 ,- . $ 3 +?- . ,-.! & "11 ?"1 % @1 . -?1 % @11 % B,1 3 +-1 . " 6 ,- . ?11 % @1 . -+1 % @11 % -11 % 3 / 01 2 +?- . / 01 2 +,- . 0111 $:A+!99#$ 8) Trench IGBT Modules 9"1 7 8 4 +- 7 ) C "11 Inverse Diode $D 3 +?- . $D:A SKM 600GB066D $D:A+!99#$D Module $:A) Features ! " # $ Typical Applications % & '() & Remarks * &* +,-.! * /01 *** 2+-1.! & * & 34+-1. ) &5 4 "67 8 4 +-7 3 +-1.7 4 9"1! :8 ; < / & &* $=4-11% +11. Units ,- . $:A SEMITRANS® 3 Values %! + * Characteristics Symbol Conditions IGBT 8 8 ! $ E!" % $) 8 1 ! ) 1 8 +- ,-.! & min. typ. max. Units - -!@ "!- 3 ,- . 1!9 1!E % 3 ,- . 1!E + 3 +-1 . 1!@- 1!E 3 ,-. 1!E +!- F 3 +-1. +!0 , F +!0- +!E 3 +-1. * +!? ,!+ + AG 9? ,!9 D D +!+ D 0011 $ "11 %! 8 +- 3 ,-. * ,-! 8 1 H8 8 /@***2+- :8 3 . & & :8 +!- I :8 +!- F : 3/ $8L 911 $ "11% 3 +-1 . 8 /@K2+- 1!- I ,?1 ?? ?!"?1 ?? J ,E!- J 1!1@ MKN GB 1 06-10-2009 NOS © by SEMIKRON SKM 600GB066D Characteristics Symbol Conditions Inverse Diode D $D "11 %7 8 1 D1 D SEMITRANS® 3 Trench IGBT Modules $::A H $D "11 % &K& @"11 %K6 8 /@ 7 911 : 3/= && typ. max. Units 3 ,- . * +!0 +!" 3 ,- . 1!E- + 3 ,- . 1!@ + F 3 +-1 . -@1 +1- % 6 ,- J 1!+,- MKN Module O :P2P SKM 600GB066D min. +*! / ,1 ,- . 1!9- F +,- . 1!- F : / & 1!19@ MKN A < A" 9 - Q A A" ,!- - Q 9,- Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. ! " # $ Typical Applications % & '() & Remarks * &* +,-.! This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. * /01 *** 2+-1.! & * & 34+-1. ) &5 4 "67 8 4 +-7 3 +-1.7 4 9"1! :8 ; < / & &* $=4-11% +11. GB 2 06-10-2009 NOS © by SEMIKRON SKM 600GB066D SEMITRANS® 3 Zth Symbol Zth(j-c)l Conditions Values Units : : : : + , 9 0 + , 9 0@!0 +E!9!+ 0 1!1-0 1!1+00 1!11+, <KN <KN <KN <KN 0 1!11," : : : : + , 9 0 + , 9 @1 99 +1!+!1!1-0 1!1+ 1!111? <KN <KN <KN <KN 0 1!11+E Zth(j-c)D Trench IGBT Modules SKM 600GB066D Features ! " # $ Typical Applications % & '() & Remarks * &* +,-.! * /01 *** 2+-1.! & * & 34+-1. ) &5 4 "67 8 4 +-7 3 +-1.7 4 9"1! :8 ; < / & &* $=4-11% +11. GB 3 06-10-2009 NOS © by SEMIKRON SKM 600GB066D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 600GB066D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 06-10-2009 NOS © by SEMIKRON SKM 600GB066D UL recognized, file no. E 63 532 = -" 8L 6 =-" 06-10-2009 NOS © by SEMIKRON