STB7N52K3 - STD7N52K3 STF7N52K3 - STP7N52K3 N-channel 525 V, 0.84 Ω, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Preliminary Data Features Type RDS(on) max VDSS ID Pw 3 3 STB7N52K3 525 V < 0.98 Ω 6.3 A 90 W STD7N52K3 525 V < 0.98 Ω 6.3 A 90 W STF7N52K3 525 V < 0.98 Ω 6.3 A(1) 25 W STP7N52K3 525 V < 0.98 Ω 90 W 6.3 A 1 1 DPAK D²PAK 1. Limited by package 3 3 ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected 1 TO-220 Figure 1. 1 2 2 TO-220FP Internal schematic diagram Application ■ Switching applications Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. Table 1. Device summary Order codes Marking Package Packaging STB7N52K3 7N52K3 D²PAK Tape and reel STD7N52K3 7N52K3 DPAK Tape and reel STF7N52K3 7N52K3 TO-220FP Tube STP7N52K3 7N52K3 TO-220 Tube July 2008 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/15 www.st.com 15 Contents STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 6 STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 DPAK D²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 525 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C 6.3 (1) 6.3 Drain current (continuous) at TC = 100 °C 4 4 (1) A Drain current (pulsed) 25 Total dissipation at TC = 25 °C 90 25 W 0.72 0.2 W/°C Derating factor 25 (1) A A VESD(G-S) Gate source ESD(HBM-C = 100 pF, R = 1.5 kΩ) 2500 V dv/dt (3) Peak diode recovery voltage slope TBD V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj -- 2500 V -55 to 150 °C 150 °C TO-220 DPAK D²PAK TO-220FP Unit Max. operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 6.3 A, di/dt = TBD, VDD = 80% V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. 1.39 5 °C/W -- 50 30 -- °C/W 62.5 -- -- 62.5 °C/W 300 °C Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 6.3 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) TBD mJ 3/15 Electrical characteristics 2 STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Symbol gfs (1) Typ. Max. Unit 525 V 1 50 µA µA ± 10 µA 3.75 4.5 V 0.84 0.98 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 3.1 A Dynamic Parameter Forward transconductance Test conditions Min. VDS = 15 V, ID = 3.1 A TBD S Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 TBD TBD TBD pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 420 V TBD pF RG Intrinsic gate resistance f = 1 MHz open drain TBD Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 6.3 A, VGS = 10 V (see Figure 3) TBD TBD TBD nC nC nC Ciss Coss Crss COSS eq(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf 4/15 Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 262 V, ID = 3.1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2) Min. Typ. TBD TBD TBD TBD Max Unit ns ns ns ns STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Table 8. Electrical characteristics Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 6.3 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.3 A, di/dt = 100 A/µs VDD = 30 V (see Figure 7) TBD TBD TBD ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.3 A, di/dt = 100 A/µs VDD = 30 V, Tj = 150 °C (see Figure 7) TBD TBD TBD ns nC A trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit 6.3 25 A A 1.6 V 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1 mA (open drain) Min Typ Max Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 5/15 Test circuits STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/15 Figure 3. Figure 7. Gate charge test circuit STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/15 Package mechanical data STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 8/15 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Package mechanical data TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 9/15 Package mechanical data STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° 0079457_M 10/15 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 11/15 Package mechanical data 5 STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/15 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Package mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/15 Revision history 6 STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Revision history Table 10. 14/15 Document revision history Date Revision 07-Jul-2008 1 Changes First release STB7N52K3 - STD7N52K3 - STF7N52K3 - STP7N52K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15