STN3N45K3 STQ3N45K3-AP, STU3N45K3 N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3™ Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID Pw STN3N45K3 450 V < 3.8 Ω 0.6 A 2W STQ3N45K3-AP 450 V < 3.8 Ω 0.6 A 2.5 W STU3N45K3 450 V < 3.8 Ω 1.8 A 27 W ■ ■ 3 2 1 TO-92 100% avalanche tested Extremely high dv/dt capability 1 2 3 SOT-223 ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Figure 1. Internal schematic diagram D(2) Application ■ IPAK 2 Switching applications Description G(1) The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package Packaging STN3N45K3 3N45K3 SOT-223 Tube STQ3N45K3-AP 3N45K3 TO-92 Ammopak STU3N45K3 3N45K3 IPAK Tube April 2010 Doc ID 17206 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STN3N45K3, STQ3N45K3-AP, STU3N45K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 6 Doc ID 17206 Rev 2 STN3N45K3, STQ3N45K3-AP, STU3N45K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit SOT-223 TO-92 IPAK VDS Drain-source voltage (VGS = 0) 450 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 0.6 1.8 A ID Drain current (continuous) at TC = 100 °C 0.38 1 A Drain current (pulsed) 2.4 7.2 A 27 W IDM (1) PTOT Total dissipation at TC = 25 °C Tstg Storage temperature Tj 2 Max. operating junction temperature 2.5 -55 to 150 °C 150 °C 1. Pulse width limited by safe operating area. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. Symbol SOT-223 TO-92 IPAK Unit 62.50 50 4.63 °C/W 100 °C/W 300 °C Max value Unit Avalanche characteristics Parameter IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 0.5 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) TBD mJ Doc ID 17206 Rev 2 3/12 Electrical characteristics 2 STN3N45K3, STQ3N45K3-AP, STU3N45K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Symbol Min. Typ. Max. 450 3 VGS = 10 V, ID = 0.5 A Unit V 1 50 µA µA ± 10 µA 3.75 4.5 V 3.2 3.8 Ω VGS = ± 20 V VGS(th) Table 6. Dynamic Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 150 30 6 - pF pF pF RG Intrinsic gate resistance f = 1 MHz open drain - TBD - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 360 V, ID = 1.8 A, VGS = 10 V (see Figure 3) - 6 TBD TBD - nC nC nC Min. Typ. Max Unit - TBD TBD TBD TBD - ns ns ns ns Ciss Coss Crss Table 7. Symbol td(on) tr td(off) tf 4/12 On /off states Parameter Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 225 V, ID = 0.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2) Doc ID 17206 Rev 2 STN3N45K3, STQ3N45K3-AP, STU3N45K3 Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Min. Typ. Max. Unit - 1.8 7.2 A A ISD = 1.8 A, VGS = 0 - TBD V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.8 A, di/dt = 100 A/µs VDD = 100 V (see Figure 7) - TBD TBD TBD ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.8 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 7) - TBD TBD TBD ns nC A Min Typ 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Table 9. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 Max Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 17206 Rev 2 5/12 Test circuits STN3N45K3, STQ3N45K3-AP, STU3N45K3 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped Inductive load test circuit L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/12 0 Doc ID 17206 Rev 2 10% AM01473v1 STN3N45K3, STQ3N45K3-AP, STU3N45K3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17206 Rev 2 7/12 Package mechanical data STN3N45K3, STQ3N45K3-AP, STU3N45K3 SOT-223 mechanical data mm. DIM. min. typ A max. 1.80 A1 0.02 0.1 B 0.60 0.70 0.85 B1 2.90 3.00 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.00 7.30 10 o V 0046067_L 8/12 Doc ID 17206 Rev 2 STN3N45K3, STQ3N45K3-AP, STU3N45K3 Table 10. Package mechanical data TO-92 mechanical data mm Dim. Min. Typ. Max. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 2.41 S1 0.92 1.52 W 0.41 0.56 V Figure 8. 5° TO-92 drawing 0102782 D Doc ID 17206 Rev 2 9/12 Package mechanical data STN3N45K3, STQ3N45K3-AP, STU3N45K3 TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 10/12 Doc ID 17206 Rev 2 STN3N45K3, STQ3N45K3-AP, STU3N45K3 5 Revision history Revision history Table 11. Document revision history Date Revision Changes 02-Mar-2010 1 First release 23-Apr-2010 2 Changed root part number Doc ID 17206 Rev 2 11/12 STN3N45K3, STQ3N45K3-AP, STU3N45K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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