STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STSJ80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Switching losses reduced ■ Low threshold device ■ Improved junction-case thermal resistance PowerSO-8 Description This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability. Internal schematic diagram Applications ■ Switching application DRAIN CONTACT ALSO ON THE BACKSIDE Order codes Part number Marking Package Packaging STSJ80N4LLF3 80N4LL- PowerSO-8 Tape & reel November 2006 Rev 3 1/12 www.st.com 12 Contents STSJ80N4LLF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STSJ80N4LLF3 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit 40 V VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ± 16 V Gate- source voltage ±18 V ID (2) Drain current (continuous) at TC = 25°C 80 A ID (3) Drain current (continuous) at TC = 25°C 18 A ID (2) Drain current (continuous) at TC = 100°C 50 A Drain current (pulsed) 72 A Ptot(2) Total dissipation at TC = 25°C 70 W Ptot(3) Total dissipation at TC = 25°C 3 W Tj Tstg Maximum operating junction temperature Storage temperature -55 to 150 °C VGS IDM (1) (4) 1. Guaranteed for test time < 15ms 2. This value is rated according to Rthj-c 3. This value is rated according to Rthj-pcb 4. Pulse with limited by safe operating area Table 2. Thermal data Symbol Rthj-c Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max 1.8 °C/W Thermal resistance junction-pcb max 42 °C/W 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.) 3/12 Electrical characteristics 2 STSJ80N4LLF3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 40V, TC = 25°C VDS = 40V, TC = 125°C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V ±200 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 9A VGS = 4.5V, ID = 9A V(BR)DSS Table 4. Symbol 40 V 1 V 0.0042 0.005 0.005 0.007 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 2530 574 29 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 20V, ID = 18A VGS = 4.5V (see Figure 13) 21.5 6.9 8.2 28 nC nC nC Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 3 5 Ω RG 4/12 On/off states 1 pF pF pF STSJ80N4LLF3 Electrical characteristics Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 20V, ID = 9A RG = 4.7Ω , VGS = 10V (see Figure 15) 17 25 ns ns td(off) tf Turn-off delay time Fall time VDD = 20V, ID = 9A RG = 4.7Ω , VGS = 10V (see Figure 15) 62 9 ns ns Table 6. Source drain diode Symbol Parameter ISD ISDM Source-drain current Source-drain current (pulsed) VSD(1) trr Qrr IRRM Test conditions Forward on voltage ISD = 18A , VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 14) Min. Typ. 43 64 3 Max. Unit 18 72 A A 1.2 V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Electrical characteristics STSJ80N4LLF3 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STSJ80N4LLF3 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STSJ80N4LLF3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STSJ80N4LLF3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STSJ80N4LLF3 PowerSO-8™ MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 0.196 c1 45° (typ.) D 4.8 5.0 0.188 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 e4 2.79 0.110 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 10/12 MIN. 0.6 0.023 8° (max.) STSJ80N4LLF3 5 Revision history Revision history Table 7. Revision history Date Revision Changes 13-May-2005 1 Initial release. 23-Jun-2006 2 New template, complete version 22-Nov-2006 3 Corrected part number 11/12 STSJ80N4LLF3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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