CENTRAL CP287

PROCESS
CP287
Central
Power Transistor
8.0 Amp NPN Silicon Power Transistor Chip
TM
Semiconductor Corp.
PROCESS DETAILS
Die Size
130 x 130 MILS
Die Thickness
9.5 MILS
Base Bonding Pad Area
37 x 20 MILS
Emitter Bonding Pad Area
38 x 20 MILS
Top Side Metalization
Al - 45,000Å
Back Side Metalization
Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY
GROSS DIE PER 4 INCH WAFER
974
PRINCIPAL DEVICE TYPES
MJE13007
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (26-July 2005)