PROCESS CP287 Central Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Die Size 130 x 130 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 37 x 20 MILS Emitter Bonding Pad Area 38 x 20 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GEOMETRY GROSS DIE PER 4 INCH WAFER 974 PRINCIPAL DEVICE TYPES MJE13007 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (26-July 2005)