Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. • Typical W - CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. • Adjacent Channel Power: - 50 dBc @ 30 dBm, 5 MHz Channel Spacing • Power Gain: 23.7 dB Min (@ f = 2140 MHz) • 0.2 dB Typical Gain Flatness Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHPA21010N 2110 - 2170 MHz 10 W, 23.7 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP - 02, STYLE 3 Table 1. Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Rating Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power (Single Carrier CW) Pin +20 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Quiescent Bias Current IDQ 750 mA Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 550 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Symbol Min Typ Max Unit IDD — 550 — mA Power Gain (f = 2140 MHz) Gp 23.7 25 — dB Gain Flatness (f = 2110 - 2170 MHz) GF — 0.2 0.6 dB Power Output @ 1 dB Comp. (f = 2140 MHz) P1dB — 41.5 — dBm Input VSWR (f = 2110 - 2170 MHz) VSWRin — 1.5:1 2:1 Noise Figure (f = 2140 MHz) NF — — 10 dB ACPR — - 55 - 50 dBc Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW, 5 MHz Channel Spacing © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHPA21010N 1 15 27 5 25 VDD = 28 Vdc Pout = 5 W IDQ = 550 mA 10 MHz Tone Spacing 0 −5 24 26 Gps TC = −10_C 14 25_C 12 85_C 23 22 IRL −15 20 2140 2160 8 85_C −10_C 6 η 4 25_C 20 2200 2180 10 18 21 2120 VDD = 28 Vdc Pout = 1 W (Avg.) IDQ = 550 mA 22 ORL −10 2100 28 24 16 2100 2110 2120 2130 2140 2150 2160 2170 2 2180 f, FREQUENCY (MHz) Figure 1. Two - Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency Figure 2. 2 - Carrier W - CDMA Power Gain and Efficiency versus Frequency −30 −10 VDD = 28 Vdc Pout (Pin) = 1 W (Avg.) IDQ = 550 mA IM3 −35 TC = 85_C −20 −10_C −40 −30 25_C 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Carrier Bandwidth −45 ACPR @ 5 MHz, IM3 @ 10 MHz, Bandwidth = 3.84 MHz 85_C −50 −10_C −50 ACPR −55 2100 −40 25_C 2110 2120 2130 2140 2150 2160 2170 −60 2180 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) f, FREQUENCY (MHz) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 26 Gps 16 2−Carrier W−CDMA, 10 MHz Carrier Spacing BW = 3.84 MHz Carrier Bandwidth G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 10 −20 2080 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 30 −20 VDD = 28 Vdc, IDQ = 550 mA 100 kHz: f1 = 2139.95 MHz f2 = 2140.05 MHz 10 MHz: f1 = 2135 MHz f2 = 2145 MHz −25 −30 −35 −40 −45 100 kHz −50 −55 10 MHz −60 15 20 25 30 35 40 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2 - Carrier W - CDMA IM3 and ACPR versus Frequency Figure 4. Two - Tone W - CDMA IM3 versus Output Power −20 −25 −30 IDQ = 750 mA −35 650 mA −40 −45 −50 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 550 mA −55 450 mA −60 15 20 25 30 35 40 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power η, DRAIN EFFICIENCY (%) 28 48 26 Gps 40 25 32 24 Pout 24 23 16 22 VDD = 28 Vdc IDQ = 550 mA f = 2140 MHz 8 η 0 −5 G ps , POWER GAIN (dB) 20 η, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (dBm) IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS 21 20 0 5 10 15 20 25 Pin, INPUT POWER (dBm) Figure 6. CW Output Power, Efficiency and Gain versus Input Power MHPA21010N 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −40 10 VDD = 28 Vdc IDQ = 550 mA f1 = 2135 MHz f2 = 2145 MHz 8 −50 6 IM3 −55 4 ACPR −60 2 η −65 5 10 15 20 25 30 η, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −45 0 35 Pout, OUTPUT POWER (dBm) Figure 7. 2 - Carrier W - CDMA ACPR, IM3 and Efficiency versus Output Power MHPA21010N RF Device Data Freescale Semiconductor 3 NOTES MHPA21010N 4 RF Device Data Freescale Semiconductor NOTES MHPA21010N RF Device Data Freescale Semiconductor 5 NOTES MHPA21010N 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 T S 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) T SEATING PLANE M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 3: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VBIAS VDD RF OUTPUT GROUND CASE 301AP - 02 ISSUE E Note: VDD (Pin 3) should always be applied before VBIAS (Pin 2). MHPA21010N RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHPA21010N Document Number: MHPA21010N 8Rev. 6, 5/2006 RF Device Data Freescale Semiconductor