WMF128K8-XXX5 HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES ■ Access Times of 50*, 60, 70, 90, 120, 150ns ■ Organized as 128Kx8 ■ Packaging • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101) • 32 pin, Hermetic Ceramic, 0.600" DIP (Package 300) • 32 lead, Flatpack (Package 220) • 32 lead, Formed Flatpack (Package 221) • 32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601) ■ Commercial, Industrial and Military Temperature Ranges ■ 5 Volt Programming. 5V ± 10% Supply. ■ Low Power CMOS ■ Embedded Erase and Program Algorithms ■ TTL Compatible Inputs and CMOS Outputs ■ Page Program Operation and Internal Program Control Time. ■ 100,000 Erase/Program Cycles Minimum Note: For programming information refer to Flash Programming 1M5 Application Note. ■ Sector Erase Architecture • 8 equal size sectors of 16KBytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase * The access time of 50ns is available in Industrial and Commercial temperature ranges only. WE VCC NC A16 VCC WE NC A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 4 3 2 1 32 31 30 A14 A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 I/O3 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 VSS 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 I/O2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A15 TOP VIEW A12 32 CLCC TOP VIEW I/O1 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 32 DIP 32 CSOJ 32 FLATPACK NC PIN CONFIGURATION FOR WMF128K8-XCLX5 PIN CONFIGURATION FOR WMF128K8-XXX5 PIN DESCRIPTION April 2001 Rev. 5 A0-16 Address Inputs I/O0-7 Data Input/Output CS Chip Select OE Output Enable WE Write Enable VCC +5.0V Power VSS Ground 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 ABSOLUTE MAXIMUM RATINGS (1) RECOMMENDED OPERATING CONDITIONS Symbol Min Max Unit Operating Temperature -55 to +125 °C Supply Voltage V CC 4.5 5.5 V Supply Voltage Range (VCC) -2.0 to +7.0 V Input High Voltage V IH 2.0 V CC + 0.3 V Signal voltage range (any pin except A9) (2) -2.0 to +7.0 V Input Low Voltage V IL -0.5 +0.8 V Storage Temperature Range -65 to +150 °C Operating Temp. (Mil.) TA -55 +125 °C +300 °C Operating Temp. (Ind.) TA -40 +85 °C 10 years A9 Voltage for Sector Protect VID 11.5 12.5 V Endurance (write/erase cycles) Mil Temp 10,000 min. cycles A9 Voltage for sector protect (VID) (3) -2.0 to +14.0 V Parameter Parameter Unit Lead Temperature (soldering, 10 seconds) Data Retention Mil Temp CAPACITANCE (T A = +25°C) NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns. 3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns. Parameter Symbol Conditions Address Input capacitance CAD VI/O = 0 V, f = 1.0 MHz Max Unit 15 pF Output Enable capacitance COE VIN = 0 V, f = 1.0 MHz 15 pF Write Enable capacitance CWE VIN = 0 V, f = 1.0 MHz 15 pF Chip Select capacitance CCS VIN = 0 V, f = 1.0 MHz 15 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 15 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol Conditions Min Max Unit µA Input Leakage Current I LI V CC = 5.5, V IN = GND to VCC 10 Output Leakage Current I LO V CC = 5.5, V IN = GND to VCC 10 µA VCC Active Current for Read (1) ICC1 CS = VIL, OE = VIH 35 mA V CC Active Current for Program or Erase (2) I CC2 CS = V IL , OE = V IH 50 mA V CC Standby Current I CC3 V CC = 5.5, CS = V IH , f = 5MHz 1.6 mA Output Low Voltage V OL I OL = 8.0 mA, V CC = 4.5 0.45 Output High Voltage V OH1 I OH = -2.5 mA, V CC = 4.5 0.85 x V CC V Output High Voltage V OH2 I OH = -100 µA, V CC = 4.5 V CC - 0.4 V Low V CC Lock Out Voltage V LKO 3.2 V V NOTES: 1. The I CC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. I CC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: V IL = 0.3V, VIH = V CC - 0.3V AC TEST CIRCUIT AC TEST CONDITIONS I OL Parameter Current Source VZ D.U.T. ≈ 1.5V Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V (Bipolar Supply) C eff = 50 pf NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z 0 = 75 Ω. V Z is typically the midpoint of V OH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. I OH Current Source White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 2 WMF128K8-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol -50 Min -60 Max Min -70 Max Min -90 Max Min -120 Max Min -150 Max Min Unit Max Write Cycle Time t AVAV t WC 50 60 70 90 120 150 ns Chip Select Setup Time t ELWL t CS 0 0 0 0 0 0 ns Write Enable Pulse Width t WLWH t WP 25 30 35 45 50 50 ns Address Setup Time t AVWL t AS 0 0 0 0 0 0 ns Data Setup Time t DVWH t DS 25 30 30 45 50 50 ns Data Hold Time t WHDX t DH 0 0 0 0 0 0 ns Address Hold Time t WLAX t AH 40 45 45 45 50 50 ns Chip Select Hold Time t WHEH t CH 0 0 0 0 0 0 ns Write Enable Pulse Width High t WHWL t WPH 20 20 20 20 20 20 ns Duration of Byte Programming Operation (min) t WHWH1 14 Sector Erase Time 2.2 t WHWH2 Read Recovery Time Before Write t GHWL 14 60 14 2.2 60 14 2.2 60 14 2.2 60 µs 14 2.2 60 2.2 60 sec 0 0 0 0 0 0 ns t VCS 50 50 50 50 50 50 µs Output Enable Setup Time tOES 0 0 0 0 0 0 ns Output Enable Hold Time (1) tOEH 10 10 10 10 10 10 ns VCC Setup Time Chip Programming Time 12.5 12.5 12.5 12.5 12.5 12.5 sec 1. For Toggle and Data Polling. AC CHARACTERISTICS – READ ONLY OPERATIONS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol -50 Min -60 Max Min 50 -70 Max 60 Min -90 Max -120 Max Max Unit Max t AVAV t RC t AVQV t ACC 50 60 70 90 120 150 ns Chip Select Access Time t ELQV t CE 50 60 70 90 120 150 ns OE to Output Valid t GLQV t OE 25 30 35 40 50 55 ns Chip Select to Output High Z (1) t EHQZ t DF 20 20 20 25 30 35 ns OE High to Output High Z (1) t GHQZ t DF 20 20 20 25 30 35 Output Hold from Address, CS or OE Change, whichever is first t AXQX t OH 0 0 120 -150 Min Address Access Time 0 90 Min Read Cycle Time 0 70 Min 0 150 0 ns ns ns 1. Guaranteed by design, not tested. 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol -50 Min -60 Max Min -70 Max Min -90 Max Min -120 Max Min -150 Max Min Unit Max Write Cycle Time t AVAV t WC 50 60 70 90 120 150 ns WE Setup Time t WLEL t WS 0 0 0 0 0 0 ns CS Pulse Width t ELEH t CP 25 30 35 45 50 50 ns Address Setup Time t AVEL t AS 0 0 0 0 0 0 ns Data Setup Time t DVEH t DS 25 30 30 45 50 50 ns Data Hold Time t EHDX t DH 0 0 0 0 0 0 ns Address Hold Time t ELAX t AH 40 45 45 45 50 50 ns WE Hold from WE High t EHWH t WH 0 0 0 0 0 0 ns CS Pulse Width High tEHEL tCPH 20 20 20 20 20 20 ns Duration of Programming Operation t WHWH1 14 Duration of Erase Operation t WHWH2 2.2 Read Recovery before Write t GHEL 0 Chip Programming Time White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 14 60 2.2 14 60 0 12.5 14 60 0 12.5 4 2.2 2.2 14 60 0 12.5 2.2 0 12.5 µs 14 60 2.2 60 0 12.5 sec ns 12.5 sec WMF128K8-XXX5 5 Outputs WE OE CS High Z tACC tCE tOE Addresses Stable Addresses tRC Output Valid tOH tDF High Z AC WAVEFORMS FOR READ OPERATIONS White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com A0H 5.0 V Data tDS tCS WE OE 6 tDH tWPH tWP tGHWL tWC CS NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. I/O 7 is the output of the complement of the data written to the device. 4. I/O OUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. Addresses 5555H tAS PA PD tAH tWHWH1 Data Polling PA I/O7 I/OOUT tOE tCE tRC tDF tOH WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED WMF128K8-XXX5 NOTES: 1. SA is the sector address for Sector Erase. AAH tDS tDH VCC tVCS 7 Data WE OE CS Addresses tGHWL tCS tWP tAS tWPH 55H 2AAAH 5555H tAH 5555H 80H 5555H AAH 2AAAH 55H SA 10H/30H AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 8 I/O0-6 Data WE OE CS I/O7 t CH tOEH tCE t OE tWHWH 1 or 2 I/O7 I/O0-6 = Invalid t OE I/O7 = Valid Data I/O0-7 Valid Data t OH t DF High Z AC WAVEFORMS FOR DATA POLLING DURING EMBEDDED ALGORITHM OPERATIONS WMF128K8-XXX5 A0H tDH tCPH 5.0 V tDS Data CS OE tWS tWC WE Addresses 5555H tGHEL tCP tAS PA PD tAH tWHWH1 Data Polling I/O7 PA I/OOUT WRITE/ERASE/PROGRAM OPERATION, CS CONTROLLED NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. I/O 7 is the output of the complement of the data written to the device. 4. I/O OUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 PACKAGE 101: 32 LEAD, CERAMIC SOJ 21.1 (0.830) ± 0.25 (0.010) 3.96 (0.156) MAX 0.2 (0.008) ± 0.05 (0.002) 11.3 (0.446) ± 0.2 (0.009) 0.89 (0.035) Radius TYP 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) PIN 1 IDENTIFIER 1.27 (0.050) TYP 19.1 (0.750) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 220: 32 LEAD, CERAMIC FLATPACK 20.83 (0.820) ± 0.25 (0.010) PIN 1 IDENTIFIER 2.60 (0.102) MAX 10.41 (0.410) ± 0.13 (0.005) 10.16 (0.400) ± 0.51 (0.020) 0.43 (0.017) ± 0.05 (0.002) 0.127 (0.005) + 0.05 (0.002) – 0.025 (0.001) 1.27 (0.050) TYP 19.05 (0.750) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 10 WMF128K8-XXX5 PACKAGE 221: 32 LEAD, FORMED CERAMIC FLATPACK 3.35 (0.132) MAX 20.83 (0.820) ± 0.25 (0.010) 0.15 (0.006) TYP 1.27 (0.050) TYP 10.41 (0.410) ± 0.13 (0.005) 13.47 (0.530) ± 0.13 (0.005) + + 0.43 (0.017) ± 0.05 (0.002) 1.27 (0.050) TYP 0.63 (0.025) TYP 0° / -4° 19.05 (0.750) TYP 1.52 (0.060) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.8 (1.686) MAX 5.13 (0.202) MAX PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.99 (0.039) ± 0.51 (0.020) 2.5 (0.100) TYP 1.27 (0.050) ± 0.1 (0.005) 0.46 (0.018) ± 0.05 (0.002) 0.25 (0.010) ± 0.05 (0.002) 15.25 (0.600) ± 0.25 (0.010) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 11 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER 7.62 (0.300) TYP 3.81 (0.150) TYP 5.08 (0.200) TYP 0.56 (0.022) 0.71 (0.028) 10.16 (0.400) TYP PIN 1 0.38 (0.015) x 45° PIN 1 IDENTIFIER 11.25 (0.443) 11.60 (0.457) 1.63 (0.064) 2.54 (0.100) 13.79 (0.543) 14.15 (0.557) 1.02 (0.040) x 45° 3 PLACES 32PinCLCCpkgdim.eps ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 12 WMF128K8-XXX5 ORDERING INFORMATION W M F 128K8 - XXX X X 5 X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads VPP PROGRAMMING VOLTAGE 5 = 5V DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: DE = 32 Lead Ceramic SOJ (Package 101) C = 32 Pin Ceramic DIP (Package 300) FE = 32 Lead Ceramic Flatpack (Package 220) FF = 32 Lead Formed Ceramic Flatpack (Package 221) CL = 32 Pin rectangular Ceramic Leadless Chip Carrier (Package 601) ACCESS TIME (ns) ORGANIZATION, 128K x 8 Flash MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. 13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMF128K8-XXX5 DEVICE TYPE SECTOR SIZE SPEED PACKAGE SMD NO. 5962-96690 01HYX 128K x 8 Flash Monolithic 16KByte 150ns 32 pin DIP (C) 128K x 8 Flash Monolithic 16KByte 120ns 32 pin DIP (C) 5962-96690 02HYX 128K x 8 Flash Monolithic 16KByte 90ns 32 pin DIP (C) 5962-96690 03HYX 128K x 8 Flash Monolithic 16KByte 70ns 32 pin DIP (C) 5962-96690 04HYX 128K x 8 Flash Monolithic 16KByte 60ns 32 pin DIP (C) 5962-96690 05HYX 128K x 8 Flash Monolithic 16KByte 150ns 32 lead SOJ (DE) 5962-96690 01HXX 128K x 8 Flash Monolithic 16KByte 120ns 32 lead SOJ (DE) 5962-96690 02HXX 128K x 8 Flash Monolithic 16KByte 90ns 32 lead SOJ (DE) 5962-96690 03HXX 128K x 8 Flash Monolithic 16KByte 70ns 32 lead SOJ (DE) 5962-96690 04HXX 128K x 8 Flash Monolithic 16KByte 60ns 32 lead SOJ (DE) 5962-96690 05HXX 128K x 8 Flash Monolithic 16KByte 150ns 32 lead Flatpack (FE) 5962-96690 01HTX 128K x 8 Flash Monolithic 16KByte 120ns 32 lead Flatpack (FE) 5962-96690 02HTX 128K x 8 Flash Monolithic 16KByte 90ns 32 lead Flatpack (FE) 5962-96690 03HTX 128K x 8 Flash Monolithic 16KByte 70ns 32 lead Flatpack (FE) 5962-96690 04HTX 128K x 8 Flash Monolithic 16KByte 60ns 32 lead Flatpack (FE) 5962-96690 05HTX 128K x 8 Flash Monolithic 16KByte 150ns 32 lead Formed Flatpack (FF) 5962-96690 01HUX 128K x 8 Flash Monolithic 16KByte 120ns 32 lead Formed Flatpack (FF) 5962-96690 02HUX 128K x 8 Flash Monolithic 16KByte 90ns 32 lead Formed Flatpack (FF) 5962-96690 03HUX 128K x 8 Flash Monolithic 16KByte 70ns 32 lead Formed Flatpack (FF) 5962-96690 04HUX 128K x 8 Flash Monolithic 16KByte 60ns 32 lead Formed Flatpack (FF) 5962-96690 05HUX White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 14