VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ – – Symbol Test Conditions Maximum Ratings IdAV IdAV ① TC = 100°C (diode) (module) IFSM TVJ = 45°C; VR = 0 + Features Isolation voltage 2500 V~ Planar passivated chips Low forward voltage drop ● A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 260 280 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 430 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 340 330 A2s A2s -40...+150 150 -40...+125 °C °C °C 2500 V~ IISOL £ 1 mA VISOL 50/60 Hz, RMS Md Mounting torque (M4) Terminal connection torque (M4) Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM £ £ 0.3 5 mA mA VF IF TVJ = 25°C £ 1.15 V VT0 rT For power-loss calculations only TVJ = TVJM 0.80 13 V mW RthJC per diode; DC current per module per diode, DC current per module 1.7 0.42 0.3 0.08 K/W K/W K/W K/W 8 4 50 mm mm m/s2 RthCH dS dA a Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors ● ● ● Advantages Easy to mount Space and weight savings ● ● 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values Creeping distance on surface Creepage distance in air ③ Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated ① for resistive load at bridge output © 2000 IXYS All rights reserved ● ● TVJ TVJM Tstg = 20 A; ● typ. typ. M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.30 1.186 1.489 1.193 1.509 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 008 I2t 20 40 1-2 VBO 40 250 80 A 70 TVJ=125°C TVJ= 25°C 103 50Hz, 80% VRRM VR = 0 V A A2s 200 IFSM IF 60 I2t TVJ = 45°C TVJ = 45°C 50 150 TVJ = 150°C 2 10 40 100 30 20 TVJ = 150°C 50 10 0 0.0 0.5 1.5 V 1.0 101 0 0.001 2.0 0.01 0.1 VF s 1 1 2 3 t Fig. 1 Forward current versus voltage drop per diode Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 200 50 W A 160 40 Id(AV)M RthHA : Ptot 0.1 0.5 1.0 2.0 4.0 7.0 120 80 4 5 6 78 ms910 t K/W K/W K/W K/W K/W K/W 30 20 40 10 0 0 0 10 20 30 40 50 60 A 0 20 40 60 80 100 120 140 °C Id(AV)M 0 Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature 2.0 K/W 1.6 ZthJC 1.2 Constants for ZthJC calculation: 0.8 i 0.4 0.0 0.001 VBO 40 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2000 IXYS All rights reserved s 1 1 2 3 4 5 Rthi (K/W) ti (s) 0.081 0.1449 0.2982 0.735 0.441 0.00024 0.0036 0.0235 0.142 0.7 10 t 2-2