JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors K596 ＴＯ－９２Ｓ Si N-CHANNEL JUNCTION FET 1.SOURCE FEATURES Power dissipation PCM: 0.1W（Tamb=25℃） Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 2.GATE 3.DRAIN 123 unless Test otherwise conditions specified） MIN Gate-Drain breakdown Voltage BVGDO IG= -100μA Gate-Source cut-off Voltage VGS(off) VDS= 5V , ID=1μA Drain Current IDSS VDS= 5 V , VGS=0 100 Forward Transfer Admittance |YFS| VDS= 5V , VGS=0, f=1KHz 0.4 Input Capacitance Ciss Output Capacitance CRSS TYP MAX UNIT -20 V -0.6 VDS=5V, VGS=0, f=1MHz VDS= 5 V, VGS=0 -1.5 V 800 μA 1.2 ｍＳ 3.5 pF 0.65 pF f = 1MHz IDSS Classification Classification IDSS (µA) A B C D E 100-170 150-240 210-350 320-480 440-800 TO-92S PACKAGE OUTLINE DIMENSIONS D θ E A1 c A D1 L b e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.240 1.620 0.056 0.064 A1 0.660 0.860 0.026 0.034 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 3.850 4.150 0.152 0.163 D1 2.970 3.270 0.117 0.129 E 3.010 3.310 0.119 0.130 2.640 0.096 15.500 0.594 1.270TYP e e1 2.440 L 15.100 θ 45°TYP 0.050TYP 0.104 0.610 45°TYP