NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223 Features • • • • http://onsemi.com Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified –6.0 AMPERES –20 VOLTS RDS(on) = 44 m (Typ.) Typical Applications • Power Management in Portables and Battery–Powered Products, i.e.: P–Channel D Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain–to–Source Voltage VDSS –20 Vdc Gate–to–Source Voltage VGS ±8.0 Vdc ID ID –10 –8.4 –35 Adc Rating Drain Current (Note 1) – Continuous @ TA = 25°C – Continuous @ TA = 70°C – Single Pulse (tp = 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = –20 Vdc, VGS = –5.0 Vdc, IL(pk) = –10 A, L = 3.0 mH, RG = 25) Thermal Resistance – Junction to Lead (Note 1) – Junction to Ambient (Note 2) – Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds IDM PD 8.3 W –55 to +150 °C EAS 150 mJ °C/W 15 71.4 160 TL 260 S MARKING DIAGRAM Apk TJ, Tstg RθJL RθJA RθJA G 4 1 2 SOT–223 CASE 318E STYLE 3 AWW 6P02 3 A WW 6P02 = Assembly Location = Work Week = Device Code PIN ASSIGNMENT °C 4 Drain 1. Steady State. 2. When surface mounted to an FR4 board using 1″ pad size, (Cu. Area 1.127 in2), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 in2), Steady State. 1 Gate 2 3 Drain Source ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 September, 2002 – Rev. 0 1 Device Package NTF6P02T3 SOT–223 Shipping 4000/Tape & Reel Publication Order Number: NTF6P02T3/D NTF6P02T3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit –20 – –25 –11 – – – – – – –1.0 –10 – – ± 100 –0.4 – –0.7 2.6 –1.0 – – – – 44 57 57 50 70 – gfs – 12 – Mhos pF OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = –250 Adc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = –20 Vdc, VGS = 0 Vdc) (VDS = –20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = –250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 4) (VGS = –4.5 Vdc, ID = –6.0 Adc) (VGS = –2.5 Vdc, ID = –4.0 Adc) (VGS = –2.5 Vdc, ID = –3.0 Adc) RDS(on) Forward Transconductance (Note 4) (VDS = –10 Vdc, ID = –6.0 Adc) Vdc mV/°C m DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = –16 Vdc, VGS = 0 V, f=1 1.0 0 MH MHz)) Transfer Capacitance Input Capacitance Output Capacitance (VDS = –10 Vdc, VGS = 0 V, f=1 1.0 0 MH MHz)) Transfer Capacitance Ciss – 900 1200 Coss – 350 500 Crss – 90 150 Ciss – 940 – Coss – 410 – Crss – 110 – td(on) – 7.0 12 tr – 25 45 td(off) – 75 125 tf – 50 85 td(on) – 8.0 – tr – 30 – td(off) – 60 – tf – 60 – QT – 15 20 pF SWITCHING CHARACTERISTICS (Note 5) Turn–On Delay Time Rise Time (VDD = –5.0 Vdc, ID = –1.0 Adc, VGS = –4.5 4 5 Vdc, Vd RG = 6.0 ) Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time (VDD = –16 Vdc, ID = –6.0 Adc, VGS = –4.5 4 5 Vdc, Vd RG = 2.5 ) Turn–Off Delay Time Fall Time Gate Charge (VDS = –16 Vdc, ID = –6.0 Adc, VGS = –4.5 4 5 Vdc) Vd ) (Note (N t 4) ns ns nC Qgs – 1.7 – Qgd – 6.0 – (IS = –3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = –2.1 Adc, VGS = 0 Vdc) (IS = –3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD – – – –0.82 –0.74 –0.68 –1.2 – – Vdc (IS = –3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ A/s)) (Note (N t 4) trr – 42 – ns ta – 17 – tb – 25 – QRR – 0.036 – SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage Reverse Recovery Time Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 C NTF6P02T3 12 –10 V –7.0 V –5.0 V 9 –2.2 V 12 TJ = 25°C –2.0 V –2.4 V –3.2 V –4.4 V –ID, DRAIN CURRENT (AMPS) –ID, DRAIN CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS –1.8 V 6 –1.6 V 3 –1.4 V VDS ≥ –10 V 10 8 6 4 TJ = –55°C 2 TJ = 25°C VGS = –1.2 V 1 2 4 3 5 6 7 8 9 0 10 1 1.5 2 2.5 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE () –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.2 ID = –6.0 A TJ = 25°C 0.15 0.1 0.05 0 0.5 0 2 1 3 5 4 6 3 0.08 TJ = 25°C 0.07 VGS = –2.5 V 0.06 0.05 VGS = –4.5 V 0.04 0.03 0.02 2 4 6 8 12 10 14 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) –ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–to–Source Voltage Figure 4. On–Resistance versus Drain Current and Gate Voltage 1.6 10,000 ID = –6.0 A VGS = –4.5 V VGS = 0 V 1.4 TJ = 150°C –IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE () 0 RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) TJ = 100°C 0 0 1.2 1000 1.0 0.8 0.6 –50 TJ = 100°C 100 –25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Drain–to–Source Leakage Current versus Voltage Figure 5. On–Resistance Variation with Temperature http://onsemi.com 3 20 NTF6P02T3 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss 2400 1800 Crss 1200 Ciss 600 Coss Crss 0 10 5 –VGS 0 –VDS 5 10 15 20 5 4 –VDS 16 –VGS 3 12 Qgs Qgd 2 8 ID = –6.0 A TJ = 25°C 1 4 0 0 0 4 8 12 16 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge 7 1000 –IS, SOURCE CURRENT (AMPS) VDD = –16 V ID = –3.0 A VGS = –4.5 V td(off) t, TIME (ns) 20 QT –VDS, DRAIN–TO–SOURCE VOLTAGE (V) 3000 –VGS, GATE–TO–SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS 100 tf tr 10 td(on) VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 1 1 10 RG, GATE RESISTANCE () 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.6 1.2 0.9 –VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RJA AT STEADY STATE (1″ PAD) 0.05 0.0175 CHIP JUNCTION 0.0154 F 0.02 0.01 0.0710 0.2706 0.5779 0.7086 0.0854 F 0.3074 F 1.7891 F 107.55 F AMBIENT SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) 1.0E+01 1.0E+02 1.0E+03 Figure 11. FET Thermal Response INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 http://onsemi.com 5 inches mm NTF6P02T3 TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 4 HEATING ZONES 3 & 6 “SOAK” 160°C STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205° TO 219°C “SPIKE” PEAK AT 170°C SOLDER JOINT 150°C 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 5°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 12. Typical Solder Heating Profile http://onsemi.com 6 NTF6P02T3 PACKAGE DIMENSIONS SOT–223 (TO–261) CASE 318E–04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) H M K http://onsemi.com 7 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NTF6P02T3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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