CPH5856 Ordering number : ENA0687 SANYO Semiconductors DATA SHEET CPH5856 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • DC / DC converters. Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • Junction temperature 150°C guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS ±10 V ID 2.5 A IDP PD 20 V PW≤10µs, duty cycle≤1% 10 A Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Marking : YJ Continued on next page. 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If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21407PE TI IM TC-00000403 No. A0687-1/6 CPH5856 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [SBD] Repetitive Peak Reverse Voltage VRRM 15 Nonrepetitive Peak Reverse Surge Voltage VRSM IO 15 V 1 A Average Output Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle V 3 A --55 to +150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1.5A 1.8 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 20 ID=1.5A, VGS=4V ID=1A, VGS=2.5V V 1 µA ±10 µA 1.3 V 93 mΩ 3.0 71 S 89 125 mΩ 117 180 mΩ Input Capacitance Ciss ID=0.5A, VGS=1.8V VDS=10V, f=1MHz 220 pF Output Capacitance Coss VDS=10V, f=1MHz 56 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 43 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.0 ns Rise Time tr td(off) See specified Test Circuit. 44 ns See specified Test Circuit. 28 ns tf Qg See specified Test Circuit. 37 ns VDS=10V, VGS=4V, ID=2.5A 2.9 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A 0.45 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=2.5A, VGS=0V 0.83 1.2 V VR VF 1 IR=0.2mA IF=0.5A 0.44 0.49 V VF 2 IF=1A VR=7.5V 0.51 0.56 V 3 µA Turn-OFF Delay Time Fall Time Total Gate Charge 0.97 nC [SBD] Reverse Voltage Forward Voltage Reverse Current 15 Interterminal Capacitance IR C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions V 20 pF 10 ns Electrical Connection unit : mm (typ) 7017A-005 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.15 2.9 5 4 3 0.05 1.6 2.8 0.2 0.6 5 0.9 0.2 0.6 1 1 2 0.95 0.4 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No. A0687-2/6 CPH5856 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% 100mA ID=1.5A RL=6.67Ω VOUT D 50Ω 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 4V 0V --5V G trr CPH5856 50Ω S 3.0 5V Drain Current, ID -- A 5.0V 6.0V 8.0V Drain Current, ID -- A 1.0 [MOSFET] 2.5 2.0 1.5 ID -- VGS VDS=10V 0.5 2.0 1.5 1.0 --25°C V =1. V GS 2.0 V 2.5 4.0V [MOSFET] °C ID -- VDS 2.5 Ta= 75 P.G 25 °C 0.5 0 0 0.1 0 0.3 0.4 0 0.5 Drain-to-Source Voltage, VDS -- V IT12032 RDS(on) -- VGS [MOSFET] 250 200 ID=0.5A 1.0A 150 1.5A 100 50 0 0 2 4 6 Gate-to-Source Voltage, VGS -- V 8 IT12034 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Gate-to-Source Voltage, VGS -- V IT12033 RDS(on) -- Ta [MOSFET] 250 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 200 150 1.8V S= .5A, V G I D=0 =2.5V A, V GS I D=1.0 4.0V , V GS= I D=1.5A 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT12035 No. A0687-3/6 CPH5856 yfs -- ID [MOSFET] 7 [MOSFET] VGS=0V 3 2 = Ta 1.0 C 5° --2 75 7 °C 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 5 3 2 0.01 7 5 5 7 10 IT12036 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12037 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] 1000 VDD=10V VGS=4V f=1MHz 7 5 100 7 5 tr tf td(off) 3 Ciss, Coss, Crss -- pF 2 0.1 7 5 3 2 0.001 Drain Current, ID -- A 3 3 2 25°C 2 1.0 7 5 --25° C °C 25 3 Ta= 75°C 5 0.1 0.01 Switching Time, SW Time -- ns IS -- VSD 10 7 5 VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 10 2 td(on) 10 7 5 3 3 Ciss 2 100 7 Coss 5 Crss 3 2 2 10 1.0 0.1 2 3 5 7 2 1.0 3 5 7 Drain Current, ID -- A VGS -- Qg [MOSFET] 3.5 10 7 5 3.0 2.5 2.0 1.5 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge, Qg -- nC IT12040 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 3 2 0.9 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT12039 ASO [MOSFET] IDP=10A ID=2.5A DC ≤10µs 10 1m 0µs s 10 m op 10 er 1.0 7 5 s ati 0m on s (T a= 25 3 2 °C ) Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 2 2 VDS=10V ID=2.5A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.0 0 10 IT12038 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT12041 [MOSFET] M ou nt 0.8 ed on ac er 0.6 am ic bo ar d (6 00 0.4 m m2 ✕ 0. 8m m 0.2 )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12042 No. A0687-4/6 CPH5856 IF -- VF Reverse Current, IR -- µA 3 2 0.1 7 5 3 2 50° C 125 °C 100 °C 75°C 50° C 25° C 0°C --25° C 0.01 7 5 100 75°C 10 50°C 1.0 25°C 0.1 0°C 0.01 --25°C 0.001 0.0001 0.001 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF -- V Rectangular wave (1) (2) (4) (3) 1.0E--0.5 θ 360° 8.0E--0.6 Sine wave 0.4 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0 0 0.4 0.2 0.6 0.8 80 (4) Rectangular wave 60 θ 40 360° Sine wave 20 (3) (2) (1) (1) (2) θ 360° (3) Sine wave VR 180° (4) 360° 0 2 4 6 8 10 12 14 16 IT11207 C -- VR 5 *When mounted in reliability operaion board, Rth(J-a)=183.67°C/W 100 16 IT11205 Peak Reverse Voltage, VRM -- V Interterminal Capacitance, C -- pF 120 14 VR IT11206 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 140 12 0.0E+00 1.2 Tc -- IO 160 10 2.0E--0.6 1.0 Average Output Current, IO -- A 8 PR(AV) -- VRM 4.0E--0.6 0.2 0.1 6 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave 6.0E--0.6 180° 0.3 4 Reverse Voltage, VR -- V 1.2E--0.5 0.6 0.5 2 IT11204 PF(AV) -- IO 0.7 0 0.7 Average Reverse Power Dissipation, PR(AV) -- W 0 Average Forward Power Dissipation, PF(AV) -- W Ta=150°C 125°C 100°C 1000 1.0 7 5 3 2 Case Temperature, Tc -- °C IR -- VR 10000 Ta= 1 Forward Current, IF -- A 3 2 3 2 100 7 5 3 2 180° 360° 0.4 0 0 0.2 0.6 0.8 1.0 Average Output Current, IO -- A Surge Forward Current, IFSM(Peak) -- A IT11208 IFSM -- t 3.5 1.2 10 0.1 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 3 IT10275 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No. A0687-5/6 CPH5856 Note on usage : Since the CPH5856 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0687-6/6