VEC2801 Ordering number : EN9078 SANYO Semiconductors DATA SHEET VEC2801 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features The best suited for DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS --12 V ±8 V --3 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C 15 V 15 V Drain Current (Pulse) PW≤10μs, duty cycle≤1% --12 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.9 W [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 1 A 3 A --55 to +125 °C --55 to +125 °C Marking : BL Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 61009PE MS IM TC-00001990 No.9078-1/6 VEC2801 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID= --1mA, VGS=0 VDS= --12V, VGS=0 VGS=±6.4V, VDS=0 --12 VDS= --6V, ID= --1mA VDS= --6V, ID= --1.5A --0.3 4.2 V --1 μA ±10 μA --1.3 6 V S ID= --3A, VGS= --4.5V ID= --1.5A, VGS= --2.5V 47 62 64 89 mΩ ID= --0.3A, VGS= --1.8V VDS= --6V, f=1MHz 85 122 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS= --6V, f=1MHz VDS= --6V, f=1MHz Turn-ON Delay Time td(on) Rise Time mΩ 940 pF 230 pF 180 pF See specified Test Circuit. 14 ns tr See specified Test Circuit. 84 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 104 ns Fall Time tf See specified Test Circuit. 106 ns Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs 1.6 nC Gate-to-Drain “Miller” Charge Qgd VDS= --6V, VGS= --4.5V, ID= --3A VDS= --6V, VGS= --4.5V, ID= --3A VDS= --6V, VGS= --4.5V, ID= --3A Diode Forward Voltage VSD IS= --3A, VGS=0 Reverse Voltage VR Forward Voltage VF IR=1mA IF=1A Reverse Current Interterminal Capacitance IR C Reverse Recovery Time Thermal Resistance 2.8 nC --0.85 --1.2 V 0.35 0.45 V 500 μA [SBD] 45 trr Rth(j-a) Mounted on a ceramic board (900mm2✕0.8mm) 70 0.25 8 7 6 5 1 2 3 4 0.15 6 5 2.3 2 3 ns °C / W 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode 4 0.65 Top view 2.9 0.75 1 0.07 0.25 2.8 0.3 pF 15 Electrical Connection unit : mm (typ) 7012-004 7 V VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Package Dimensions 8 15 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 No.9078-2/6 VEC2801 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --6V 100mA ID= --1.5A RL=4Ω 50Ω VOUT D 100Ω 10Ω 100mA VIN 10μs PW=10μs D.C.≤1% 10mA VIN 0V --4.5V --5V G trr VEC2801 S ID -- VDS --6 --2.5 V --5 --0.5 --3 5°C 25°C --2 --1 --25 °C VGS= --1.0V --1.0 --4 Ta= 7 --1.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 IT08898 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 --3.0A 120 100 ID= --0.3A 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT08943 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 IT08899 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta 120 Ta=25°C --1.5A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [MOSFET] VDS= --6V V --2.0 ID -- VGS [MOSFET] --1.5 --2.5 --1.8V --4.5V --3.5V --3.0 V --3.0 Drain Current, ID -- A 50Ω Drain Current, ID -- A P.G A --0.3 V, I D= 100 --1.8 V GS= 80 = --1.5A 2.5V, I D -= V GS 3.0A .5V, I D= -V GS= --4 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT08901 No.9078-3/6 VEC2801 7 5 = Ta 3 2 5°C --2 75 C 25° °C 1.0 7 5 3 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 5 --0.01 --0.2 5 7 --10 IT03869 Drain Current, ID -- A [MOSFET] Ciss, Coss, Crss -- pF 7 tr 3 2 --0.8 --1.0 --1.2 IT08902 f=1MHz Ciss 1000 td (off) tf 5 --0.6 Ciss, Coss, Crss -- VDS [MOSFET] 2 2 100 --0.4 Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V 3 Switching Time, SW Time -- ns [MOSFET] VGS=0V --25° C 10 25 ° C 2 IS -- VSD --10 7 5 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S [MOSFET] VDS= --6V Ta= 75° C ⏐yfs⏐ -- ID 3 7 5 3 Coss Crss 2 td(on) 10 7 --0.1 100 2 3 5 7 2 --1.0 3 Drain Current, ID -- A --10 7 5 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 --3.0 --2.5 --2.0 --1.5 --1.0 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC PD -- Ta IT08904 1.0 0.9 --6 --8 --10 --12 †10μs IDP= --12A ID= --3A DC --1.0 7 5 1 10 ms ms 10 0m s op era tio n 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 --0.5 Allowable Power Dissipation, PD -- W 3 2 --4 IT03872 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO [MOSFET] VDS= --6V ID= --3A --4.0 --2 IT08903 VGS -- Qg --4.5 0 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 IT08905 [MOSFET] M ou nt 0.8 ed on ac er 0.6 am ic bo ar d (9 00 0.4 m m2 ✕ 0. 8m m 0.2 )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08906 No.9078-4/6 VEC2801 IF -- VF 2 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.3 0.4 5 °C 2 Ta=1 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.5 PF(AV) -- IO 0.8 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave (1) 0.7 0.6 0.5 5 10 15 Reverse Voltage, VR -- V [SBD] IT02958 C -- VR 3 [SBD] f=1MHz 2 (2) (4) (3) θ 0.4 0 IT02957 Interterminal Capacitance, C -- pF 0.1 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W [SBD] 0.01 0 360° 0.3 0.2 Sine wave 0.1 180° 100 7 5 3 2 10 7 5 3 2 360° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Average Output Current, IO -- A IFSM -- t 12 Surge Forward Current, IFSM(Peak) -- A IR -- VR 100 7 5 3 2 Reverse Current, IR -- mA 1.0 Forward Current, IF -- A [SBD] From Top Ta=125°C 100°C 75°C 50°C 25°C 1.4 IT02959 1.0 1.0 2 3 5 7 Reverse Voltage, VR -- V 10 2 IT02960 [SBD] Current waveform 50Hz sine wave IS 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT00636 No.9078-5/6 VEC2801 Note on usage : Since the VEC2801 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2009. Specifications and information herein are subject to change without notice. PS No.9078-6/6