EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting [MOSFET] • Low ON-resistance • 1.8V drive [SBD] • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.46V) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit --3 A --20 A Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7045-007 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 5 Marking 2.1 Packing Type : TL 1.7 8 QA TL 1 LOT No. 0.2 4 0.5 0.05 0.75 2.0 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Electrical Connection 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 81110PE TK IM TC-00002458 No. A1821-1/5 EMH2801 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [SBD] Repetitive Peak Reverse Voltage VRRM VRSM Nonrepetitive Peak Reverse Surge Voltage Average Output Current 15 V 15 V Rectangular wave 2.0 A 50Hz sine wave, 1 cycle 20 A Surge Forward Current IO IFSM Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 --20 V --0.4 --1 μA ±10 μA --1.3 V 3.6 S 65 85 mΩ 98 137 mΩ 155 235 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) VDS=--10V, f=1MHz See specified Test Circuit. 7.1 ns Rise Time tr See specified Test Circuit. 21 ns Turn-OFF Delay Time td(off) tf See specified Test Circuit. 37 ns Fall Time See specified Test Circuit. 32 ns Total Gate Charge Qg 4.0 nC 0.6 nC 1.1 nC VDS=--10V, f=1MHz VDS=--10V, f=1MHz Gate-to-Source Charge Qgs VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--3A Diode Forward Voltage VSD IS=--3A, VGS=0V VR VF1 IR=1mA IF=1.0A VF2 IF=2.0A VR=7.5V 320 pF 66 pF 50 pF --0.83 --1.2 V 0.33 0.39 V 0.39 0.46 V 300 μA [SBD] Reverse Voltage Forward Voltage Reverse Current IR C Interterminal Capacitance VOUT 10Ω 10mA 100Ω 100mA 50Ω 100mA D PW=10μs D.C.≤1% pF Duty≤10% ID= --1.5A RL=6.67Ω VIN 10μs --5V G P.G 35 trr Test Circuit (SBD) VDD= --10V VIN V VR=10V, f=1MHz Switching Time Test Circuit (MOSFET) 0V --4.5V 15 trr EMH2801 50Ω S No. A1821-2/5 EMH2801 ID -- VDS --2.0 [MOSFET] .8 V --5.0 --4.5 --1 --8V --3.5 V --2.5 V --2.5 --10V --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 Drain-to-Source Voltage, VDS -- V IT14533 RDS(on) -- VGS [MOSFET] 240 ID= --0.5A --1A 120 --3A 90 60 30 --1 --2 --3 --4 --5 --6 --7 C 25 °C 160 = VGS 140 = --0 V, I D --1.8 --1.0A , I D= V 5 . 2 = -VGS .0A I = --3 --4.5V, D = V GS 120 100 80 60 40 20 --20 0 20 40 60 80 100 120 IS -- VSD 140 160 IT14536 [MOSFET] VGS=0V 3 2 3 2 = Ta 5 --2 °C °C 75 1.0 °C 25 7 5 3 --1.0 7 5 3 2 --0.1 7 5 --0.5 --0.6 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A SW Time -- ID 5 3 3 5 --0.01 --0.3 7 --0.4 [MOSFET] VDD= --10V VGS= --4.5V 7 td(off) 5 3 tf 2 tr 10 td(on) 7 --0.9 --1.0 --1.1 f=1MHz Ciss 3 7 --0.8 5 2 100 --0.7 Diode Forward Voltage, VSD -- V IT14538 Ciss, Coss, Crss -- VDS [MOSFET] IT14537 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns .5A 180 7 5 5 0.1 --0.01 200 Ambient Temperature, Ta -- °C VDS= --10V 7 220 0 --60 --40 --8 Gate-to-Source Voltage, VGS -- V IT14535 [MOSFET] | yfs | -- ID 10 IT14534 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 25° C --2 5°C 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2 Ta= 75° C 0 Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 Source Current, IS -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 210 0 240 Ta=25°C 150 --1.5 --0.5 VGS= --1.2V --0.2 --2.0 --1.0 --0.5 --0.1 --2.5 --25 ° --1.5V --3.0 75° C --1.0 0 [MOSFET] --3.5 Ta= Drain Current, ID -- A V --1.5 0 ID -- VGS VDS= --10V --4.0 --4. 5 Drain Current, ID -- A --3.0 2 100 Coss Crss 7 5 5 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT14539 2 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14540 No. A1821-3/5 EMH2801 VGS -- Qg [MOSFET] --4.0 3 2 --3.5 --3.0 --2.5 --2.0 --1.5 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W s tio n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V IT15908 IR -- VR [SBD] [MOSFET] When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IF -- VF 3 2 140 160 IT15909 [SBD] 1.0E+05 Ta=125°C 1.0 7 5 1.0E+04 Reverse Current, IR -- μA 0.01 7 5 25° 75° C 50° C 3 2 C 0°C --25 °C C 10 0.1 7 5 3 2 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Forward Voltage, VF -- V 75°C Rectangular wave 1.0E+02 25°C 1.0E+01 0°C 1.0E+00 --25°C 1.0E-01 0.50 [SBD] (3) (2) (4) (1) 50°C 0 θ 360° 0.6 180° Rectangular wave V 12 14 [SBD] (1) (2) R (3) 180° 360° VR (4) 0.0004 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 1.5 2.0 Average Output Current, IO -- A 16 IT12193 360° θ Sine wave 0.0006 0.4 10 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.0008 360° 8 PR(AV) -- VR 0.0014 0.0010 Sine wave 6 Reverse Voltage, VR -- V 0.0012 1.0 0.8 4 2 IT12192 PF(AV) -- IO 1.2 0.45 Average Reverse Power Dissipation, PR(AV) -- W 0.001 100°C 1.0E+03 0° C 3 2 Ta= 125 ° Forward Current, IF -- A op 0m 1.0 0 Average Forward Power Dissipation, PF(AV) -- W ms 10 era IT14541 PD -- Ta 1.2 4.5 10 0μ 1m s s 10 DC 3 2 --0.5 0 ID= --3A --1.0 7 5 --1.0 [MOSFET] IDP= --20A (PW≤10μs) --10 7 5 3 2 --0.1 7 5 0 ASO 5 VDS= --10V ID= --3A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 0.0002 2.5 IT12194 0 0 2 4 6 8 10 12 14 Average Reverse Voltage, VR -- V 16 IT12195 No. A1821-4/5 EMH2801 C -- VR 5 [SBD] Surge Forward Current, IFSM(Peak) -- A Interterminal Capacitance, C -- pF f=1MHz 3 2 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 3 IT13213 IFSM -- t 24 [SBD] Current waveform 50Hz sine wave 20 IS 20ms t 16 12 8 4 0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Time, t -- s 2 3 IT13214 Note on usage : Since the EMH2801 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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