SANYO VEC2814

VEC2814
Ordering number : ENA0390A
SANYO Semiconductors
DATA SHEET
VEC2814
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
•
•
•
•
DC / DC converter.
Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
VDSS
VGSS
20
ID
V
±10
V
3
A
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
12
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
VRRM
VRSM
30
V
35
V
Average Output Current
IO
1
A
Surge Forward Current
IFSM
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
10
A
Junction Temperature
Tj
50Hz sine wave, 1 cycle
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : CC
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0106 SY IM TC-00000301 / 71206 / 42506PE MS IM TB-00002243 No. A0390-1/6
VEC2814
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
20
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGSS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
yfs
RDS(on)1
VDS=10V, ID=1.4A
3.4
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=1.5A, VGS=4V
ID=0.7A, VGS=2.5V
Input Capacitance
Ciss
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
V
1
µA
±10
µA
1.3
V
66
mΩ
61
85
mΩ
75
113
mΩ
5.6
51
S
280
pF
VDS=10V, f=1MHz
60
pF
Crss
VDS=10V, f=1MHz
38
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
13
ns
Rise Time
tr
td(off)
See specified Test Circuit.
35
ns
See specified Test Circuit.
35
ns
tf
Qg
See specified Test Circuit.
25
ns
VDS=4V, VGS=4V, ID=3A
8.8
nC
nC
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Qgs
Qgd
VDS=4V, VGS=4V, ID=3A
VDS=4V, VGS=4V, ID=3A
0.85
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=3A, VGS=0V
0.82
1.2
V
VR
VF 1
IR=0.5mA
IF=0.5A
0.35
0.39
V
VF 2
0.45
V
360
µA
Interterminal Capacitance
IF=1A
VR=15V
VR=10V, f=1MHz
0.4
IR
C
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
0.85
nC
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
0.3
8
7
2
3
pF
10
ns
Electrical Connection
8
7
6
5
1
2
3
4
0.15
6 5
4
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
0.65
0.75
2.9
0.07
1
V
27
2.3
0.25
2.8
0.25
Package Dimensions
unit : mm (typ)
7012-004
30
Top view
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : VEC8
No. A0390-2/6
VEC2814
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
VDD=10V
Duty≤10%
D
100mA
50Ω
VOUT
100Ω
10Ω
100mA
ID=1A
RL=10Ω
VIN
10µs
PW=10µs
D.C.≤1%
10mA
VIN
4V
0V
--5V
G
trr
VEC2814
50Ω
S
2
5° C
Drain Current, ID -- A
1
[MOSFET]
VDS=10V
V
V
ID -- VGS
3
1.5
1.8
2.5V
5.0V 4
.0V
2
7.0V
Drain Current, ID -- A
[MOSFET]
1
--25
°C
VGS=1.0V
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
Drain-to-Source Voltage, VDS -- V
IT10933
RDS(on) -- VGS
[MOSFET]
150
100
0.7A
ID=0.3A
1.5A
50
0
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
10
IT10935
0.2
0.4
0.6
1.0
1.2
1.4
1.6
8V
=1.
V GS
100
V
2.5
A,
0.3
S=
VG
,
I D=
A
0.7
I D=
V
=4.0
, VGS
A
5
.
I D=1
50
0
--100
0.8
Gate-to-Source Voltage, VGS -- V
IT10934
RDS(on) -- Ta
[MOSFET]
150
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25 ° C
ID -- VDS
3
Ta=
7
P.G
--50
0
50
100
150
Ambient Temperature, Ta -- °C
200
IT10936
No. A0390-3/6
VEC2814
2
10
5°C
--2
7
5
Ta=
3
C
25°
°C
75
2
1.0
7
5
2
2
5 7 0.1
3
2
5 7 1.0
3
2
5 7
3
Drain Current, ID -- A
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
IT10938
Ciss, Coss, Crss -- VDS [MOSFET]
1000
f=1MHz
7
5
100
7
tr
td(off)
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
0.1
7
5
3
2
10
[MOSFET]
VDD=10V
VGS=4V
2
tf
3
2
td(on)
10
7
5
Ciss
3
2
100
7
Coss
5
Crss
3
3
2
2
1.0
0.1
10
2
3
5
7
2
1.0
3
5
7
VGS -- Qg
4.0
0
10
IT03496
Drain Current, ID -- A
[MOSFET]
3
2
VDS=10V
ID=3A
3.5
10
7
5
3.0
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
1.0
7
5
3
2
IT10937
SW Time -- ID
3
2.5
2.0
1.5
1.0
3
2
0
1
2
3
4
5
6
7
8
9
Total Gate Charge, Qg -- nC
IT03498
PD -- Ta
1.0
10
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, VDS -- V
IT03497
[MOSFET]
ASO
IDP=12A
PW≤10µs
10
1m 0µs
s
10
m
s
ID=3A
DC
1.0
7
5
3
2
10
0m
op
s
er
ati
on
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
0.5
0
Allowable Power Dissipation, PD -- W
[MOSFET]
VGS=0V
0.01
7
5
3
2
0.001
3
0.1
0.01
IS -- VSD
10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
[MOSFET]
VDS=10V
Ta=
75°
C
25°
C
--25
°C
yfs -- ID
3
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
IT10952
[MOSFET]
M
0.8
ou
nt
0.6
ed
on
ac
er
am
ic
bo
ar
d(
90
0.4
0m
m2
✕0
.8m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10953
No. A0390-4/6
VEC2814
IF -- VF
5°C
10
25
°C
Ta
=-25
°C
0°
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.3
0.4
Average Forward Power Dissipation, PF(AV) -- W
0.6
0.5
(1)
75°C
50°C
25°C
100
7
5
3
2
--25°C
10
7
5
3
2
1.0
0
[SBD]
Rectangular
wave
θ
360°
Sine wave
0.1
30
40
IT07945
Tc -- IO
[SBD]
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
140
120
0.4
0.2
20
10
Reverse Voltage, VR -- V
(2) (4) (3)
0.3
100°C
IT07944
PF(AV) -- IO
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
[SBD]
°C
Ta=125
1000
7
5
3
2
0.5
Forward Voltage, VF -- V
Case Temperature, Tc -- °C
0.2
0.1
0
IR -- VR
3
2
Reverse Current, IR -- µA
C
75
°C
50
°C
1.0
7
5
3
2
[SBD]
10000
7
5
3
2
12
Forward Current, IF -- A
10
7
5
3
2
100
80
60
40
(1)
(2) (4) (3)
20
180°
360°
1.0
0
0
0.2
0.4
0.6
0.8
Average Output Current, IO -- A
IT08214
C -- VR
3
0
1.2
0
0.2
0.4
0.6
0.8
Average Output Current, IO -- A
1.0
1.2
IT08216
[SBD]
f=1MHz
Interterminal Capacitance, C -- pF
2
100
7
5
3
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
Reverse Voltage, VR -- V
2
3
5 7 100
IT07948
No. A0390-5/6
VEC2814
Note on usage : Since the VEC2814 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0390-6/6