SCH2809 Ordering number : ENA0446 SANYO Semiconductors DATA SHEET SCH2809 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS --12 V ±10 V ID --1.2 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit --4.8 A 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 0.5 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 3 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QJ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006PE MS IM TB-00002323 No. A0446-1/6 SCH2809 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA --0.3 yfs RDS(on)1 VDS=--6V, ID=--0.8A 1.08 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 --12 V --10 µA ±10 µA --1.0 V 1.8 S ID=--0.6A, VGS=--4.5V ID=--0.3A, VGS=--2.5V 235 310 mΩ 335 470 mΩ 445 670 mΩ Input Capacitance Ciss ID=--0.1A, VGS=--1.8V VDS=--6V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 160 pF VDS=--6V, f=1MHz 45 pF Crss VDS=--6V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 45 ns See specified Test Circuit. 29 ns tf See specified Test Circuit. 30 ns Qg VDS=--6V, VGS=--4.5V, ID=--1.2A 2.6 nC Gate-to-Source Charge Qgs nC Qgd VDS=--6V, VGS=--4.5V, ID=--1.2A VDS=--6V, VGS=--4.5V, ID=--1.2A 0.25 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--1.2A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 0.65 nC --0.92 --1.5 V 0.4 0.46 V 90 µA [SBD] Reverse Voltage VR Forward Voltage VF Reverse Current Interterminal Capacitance IR C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions IR=0.5mA IF=0.5A 15 VR=6V 13 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain 1 2 3 Top view 1.6 0.2 1.5 ns 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 pF 10 Electrical Connection unit : mm 7028-003 6 5 4 V 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No. A0446-2/6 SCH2809 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --6V D 100mA 50Ω VOUT 100Ω 10Ω 100mA ID= --0.8A RL=7.5Ω VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --4.5V --5V G trr SCH2809 50Ω S [MOSFET] ID -- VGS --2.0 V V V .5 -3.0 2.5V -- --4 .5 --3 --1.5V --0.6 --1.0 5°C 25° --25 C °C V --1.8 --1.5 --0.5 --0.3 VGS= --1.0V 0 0 0 --0.2 --0.1 --0.3 --0.4 0 --0.5 Drain-to-Source Voltage, VDS -- V IT07144 [MOSFET] RDS(on) -- VGS 800 VDS= --6V Ta= 7 Drain Current, ID -- A Drain Current, ID -- A --1.2 --0.9 [MOSFET] C 25° 75°C C ID -- VDS --1.5 Ta= --25 ° P.G --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V IT04354 [MOSFET] RDS(on) -- Ta 800 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 700 600 --0.6A 500 ID= --0.4A 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT07142 700 600 --1.8V S= VG , A 0.1 I D= ---2.5V V GS= , A .3 0 I D= -= --4.5V A, V GS I D= --0.6 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT07143 No. A0446-3/6 SCH2809 yfs -- ID 5 3 [MOSFET] VGS=0V 3 °C C 5° --2 = °C Ta 75 1.0 7 5 3 2 2 --1.0 7 5 3 --25°C 25 Ta=7 5°C 25°C 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A --0.1 --0.4 3 [MOSFET] 5 VDD= --6V VGS= --4.5V 2 --0.6 --0.8 --1.0 --1.2 --1.4 Diode Forward Voltage, VSD -- V IT04358 Ciss, Coss, Crss -- VDS [MOSFET] IT04357 SW Time -- ID 3 f=1MHz 3 100 7 tr 5 td(off) tf 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns IS -- VSD [MOSFET] VDS= --6V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 2 td(on) 10 7 Ciss 100 7 5 5 Coss 3 Crss 2 3 10 2 --0.1 2 3 5 7 2 --1.0 Drain Current, ID -- A --10 7 5 --4 --6 --8 --10 IDP= --4.8A 3 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 2 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC IT04361 PD -- Ta 0.8 3.0 D C m 10 op s 0m er 3 2 s at io n (T a= 25 Operation in this area is limited by RDS(on). --0.1 7 5 2 0 10 ID= --1.2A --1.0 7 5 3 --0.5 ≤10µs 100 µs s --3.5 --12 IT04360 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO 1m Gate-to-Source Voltage, VGS -- V --2 [MOSFET] VDS= --6V ID= --1.2A --4.0 Allowable Power Dissipation, PD -- W 0 IT04359 VGS -- Qg --4.5 3 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT11233 [MOSFET] M 0.6 ou nte do na ce ram 0.4 ic bo ard (9 00 mm 0.2 2 ✕0 .8m m) 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11234 No. A0446-4/6 SCH2809 IF -- VF 1.0 [SBD] 7 Reverse Current, IR -- µA 3 2 0.1 7 5 Ta= 125 °C 100 °C 75° C 50° C 25 ° C Forward Current, IF -- A 5 3 2 0.01 0.1 0.2 0.3 0.4 100°C 1000 7 5 3 2 75°C 50°C 100 7 5 3 2 25°C 10 7 5 3 2 (1) Rectangular wave [SBD] Interterminal Capacitance, C -- pF 360° Sine wave 0.5 180° 0.4 360° 0.3 (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Average Output Current, IO -- A 1.4 IT06806 IFSM -- t 3.5 15 IT06805 [SBD] f=1MHz θ 0.6 C -- VR 7 (2) (4) (3) 0.8 0.7 10 Reverse Voltage, VR -- V IT06804 PF(AV) -- IO 0.9 5 0 0.5 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W [SBD] Ta=125°C 1.0 0 Surge Forward Current, IFSM(Peak) -- A IR -- VR 10000 7 5 3 2 5 3 2 10 7 5 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT06807 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No. A0446-5/6 SCH2809 Note on usage : Since the SCH2809 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0446-6/6