VEC2813 Ordering number : ENA0384A SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS 20 ID V ±10 V 3 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 30 V Average Output Current IO 2 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 10 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : CB Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0106 SY IM TC-00000299 / 70306 / 52506PE MS IM TB-00002333 No. A0384-1/6 VEC2813 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGSS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1.4A 3.4 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=1.5A, VGS=4V ID=0.7A, VGS=2.5V Input Capacitance Ciss ID=0.3A, VGS=1.8V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance V 1 µA ±10 µA 1.3 V 66 mΩ 61 85 mΩ 75 113 mΩ 5.6 51 S 280 pF VDS=10V, f=1MHz 60 pF Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 35 ns tf Qg See specified Test Circuit. 25 ns VDS=10V, VGS=4V, ID=3A 8.8 nC nC Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A 0.85 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0V 0.82 1.2 0.4 0.45 V 1.25 mA 0.85 nC V [SBD] Reverse Voltage VR Forward Voltage VF IR=2mA IF=2A 30 V Reverse Current Interterminal Capacitance IR C VR=10V, f=1MHz 75 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 20 ns VR=15V Package Dimensions Electrical Connection 0.3 8 7 8 7 6 5 1 2 3 4 0.15 6 5 2.3 2 3 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode 0.65 2.9 0.75 1 0.07 0.25 2.8 0.25 unit : mm (typ) 7012-004 Top view 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 No. A0384-2/6 VEC2813 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% D 100mA 50Ω VOUT 100Ω 10Ω 100mA ID=1.5A RL=6.67Ω VIN 10µs PW=10µs D.C.≤1% 10mA VIN 4V 0V --5V G trr VEC2813 50Ω S 2 5° C Drain Current, ID -- A 1 [MOSFET] VDS=10V V V ID -- VGS 3 1.5 1.8 2.5V 5.0V 4 .0V 2 7.0V Drain Current, ID -- A [MOSFET] 1 --25 °C VGS=1.0V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Drain-to-Source Voltage, VDS -- V IT10933 RDS(on) -- VGS [MOSFET] 150 100 0.7A ID=0.3A 1.5A 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT10935 0.2 0.4 0.6 1.0 1.2 1.4 1.6 8V =1. V GS 100 V 2.5 A, 0.3 S= VG , I D= A 0.7 I D= V =4.0 , VGS A 5 . I D=1 50 0 --100 0.8 Gate-to-Source Voltage, VGS -- V IT10934 RDS(on) -- Ta [MOSFET] 150 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 ° C ID -- VDS 3 Ta= 7 P.G --50 0 50 100 150 Ambient Temperature, Ta -- °C 200 IT10936 No. A0384-3/6 VEC2813 2 10 5°C --2 7 5 Ta= 3 C 25° °C 75 2 1.0 7 5 2 2 5 7 0.1 3 2 5 7 1.0 3 2 5 7 3 Drain Current, ID -- A 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT10938 Ciss, Coss, Crss -- VDS [MOSFET] 1000 f=1MHz 7 5 100 7 tr td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.1 7 5 3 2 10 [MOSFET] VDD=10V VGS=4V 2 tf 3 2 td(on) 10 7 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 7 VGS -- Qg 4.0 0 10 IT03496 Drain Current, ID -- A [MOSFET] 3 2 VDS=10V ID=3A 3.5 10 7 5 3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 1.0 7 5 3 2 IT10937 SW Time -- ID 3 2.5 2.0 1.5 1.0 3 2 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC IT03498 PD -- Ta 1.0 10 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT03497 [MOSFET] ASO PW≤10µs 10 1m 0µs s 10 m s IDP=12A ID=3A DC 1.0 7 5 10 0m s op er 3 2 ati on Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 0 Allowable Power Dissipation, PD -- W [MOSFET] VGS=0V 0.01 7 5 3 2 0.001 3 0.1 0.01 IS -- VSD 10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS=10V Ta= 75° C 25° C --25 °C yfs -- ID 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT10952 [MOSFET] M 0.8 ou nt 0.6 ed on ac er am ic bo ar d( 90 0.4 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10953 No. A0384-4/6 VEC2813 IF -- VF [SBD] 0.1 7 5 --25 °C 1.0 7 5 3 2 3 2 0.01 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 PF(AV) -- IO 0.50 [SBD] 100°C 75°C 50°C 25°C --25°C 0 10 5 15 20 25 30 Reverse Voltage, VR -- V [SBD] C -- VR 7 35 IT08569 [SBD] Rectangular wave (1) 1.0 5 (2) (4) (3) θ 360° 0.8 Sine wave 0.6 180° 360° 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 1.5 3 2 100 7 5 3 2.0 2.5 Average Forward Current, IO -- A IT08571 IFSM -- t [SBD] 14 Surge Forward Current, IFSM(Peak) -- A IR -- VR °C Ta=125 IT08568 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V 1.2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 7 5 3 2 0.0001 Reverse Current, IR -- mA 3 2 Ta =1 25 10 °C 0° C 75 °C 50 °C 25° C Forward Current, IF -- A 10 7 5 2 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT08572 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No. A0384-5/6 VEC2813 Note on usage : Since the VEC2813 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0384-6/6