SANYO MCH5837

MCH5837
Ordering number : ENA0781
SANYO Semiconductors
DATA SHEET
MCH5837
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
•
•
•
Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M)
contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
VDSS
VGSS
20
ID
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
V
±10
V
2
A
8
A
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : YB
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41807PE TI IM TC-00000616 No. A0781-1/6
MCH5837
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
Nonrepetitive Peak Reverse Surge Voltage
VRSM
IO
15
V
1
A
Average Output Current
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
V
3
A
--55 to +125
°C
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=1A
1.4
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
20
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
Input Capacitance
Ciss
ID=0.1A, VGS=1.8V
VDS=10V, f=1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
V
1
µA
±10
µA
1.3
2.4
V
S
110
145
mΩ
150
215
mΩ
210
320
mΩ
115
pF
VDS=10V, f=1MHz
35
pF
VDS=10V, f=1MHz
See specified Test Circuit.
25
pF
7.5
ns
tr
td(off)
See specified Test Circuit.
27
ns
See specified Test Circuit.
20
ns
tf
Qg
See specified Test Circuit.
30
ns
VDS=10V, VGS=4V, ID=2A
1.8
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
0.35
Gate-to-Drain “Miller” Charge
0.5
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.86
1.2
V
VR
VF 1
IR=0.5mA
IF=0.3A
0.3
0.33
V
VF 2
IF=0.5A
VR=6V
0.33
0.36
V
90
µA
Turn-OFF Delay Time
Fall Time
Total Gate Charge
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
15
Interterminal Capacitance
IR
C
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Package Dimensions
V
20
pF
10
ns
Electrical Connection
unit : mm (typ)
7021A-008
5
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
4
0 to 0.02
1
2
3
0.65
1
2
3
Top view
0.3
0.07
0.85
0.25
4
0.15
2.1
1.6
0.25
5
2.0
1
5
2
3
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
No. A0781-2/6
MCH5837
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
VDD=10V
Duty≤10%
100mA
ID=1A
RL=10Ω
D
50Ω
VOUT
100Ω
10Ω
100mA
VIN
10µs
PW=10µs
D.C.≤1%
10mA
VIN
4V
0V
--5V
G
trr
MCH5837
50Ω
S
ID -- VDS
V
VDS=10V
1.8
1.8
1.6
0.8
0.6
0.4
0.2
0
0
0
0.1
0.3
0.2
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.5A
200
1.0A
150
100
50
0
2
4
6
Gate-to-Source Voltage, VGS -- V
8
IT10330
0.6
0.8
1.0
1.2
1.4
1.6
IT10329
RDS(on) -- Ta
350
250
0
0.4
Gate-to-Source Voltage, VGS -- V
Ta=25°C
ID=0.1A
0.2
IT10328
RDS(on) -- VGS
300
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
°C
VGS=1.0V
1.0
--25
0.5
1.2
75°
C
1.0
1.4
5°C
Drain Current, ID -- A
1.5
ID -- VGS
2.0
8.0V
Drain Current, ID -- A
4.0V
3.0V
2.5V
2.0
Ta=
2
P.G
300
8V
250
1.
S=
A, VG
1
0.
I D=
2.5V
S=
VG
,
0.5A
4.0V
I D=
S=
A, VG
0
.
1
I D=
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT10340
No. A0781-3/6
MCH5837
yfs -- ID
VGS=0V
3
3
2
7
5
2
°C
C
5°
3
2
--25
°C
75
3
2
0.1
7
5
25°
C
--
=
Ta
1.0
1.0
7
5
5°C
°C
25
Ta=
7
2
3
2
0.1
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Drain Current, ID -- A
5
0
0.2
0.6
tf
td(off)
3
2
td(on)
10
7
tr
5
1.2
IT10333
f=1MHz
Ciss, Coss, Crss -- pF
5
1.0
2
100
7
0.8
Ciss, Coss, Crss -- VDS
3
VDD=10V
VGS=4V
2
0.4
Diode Forward Voltage, VSD -- V
IT10332
SW Time -- ID
3
Switching Time, SW Time -- ns
IS -- VSD
5
VDS=10V
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
5
Ciss
100
7
5
Coss
Crss
3
2
3
2
0.01
10
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
3
3.5
10
7
5
Drain Current, ID -- A
2.5
2.0
1.5
1.0
3
2
1.0
1.5
2.0
Total Gate Charge, Qg -- nC
IT10336
PD -- Ta
1.0
6
8
10
12
14
16
18
20
IT10335
ASO
PW≤10µs
10
0µ
s
1m
s
IDP=8A
ID=2A
DC
1.0
7
5
10
op
m
10
0m
er
3
2
s
ati
s
on
(T
a=
Operation in this
25
°C
area is limited by RDS(on).
)
0.1
7
5
3
2
0.5
0.5
4
2
3.0
0
2
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=2A
0
Allowable Power Dissipation, PD -- W
0
IT10334
VGS -- Qg
4.0
Gate-to-Source Voltage, VGS -- V
5
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT12366
M
0.8
ou
nt
0.6
ed
on
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2
✕0
.8m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12365
No. A0781-4/6
MCH5837
IF -- VF
Reverse Current, IR -- µA
0.1
7
5
3
2
0.01
7
5
3
2
--2
5°C
1.0
7
5
3
2
100°C
75°C
1000
50°C
100
25°C
10
1.0
--25°C
0.01
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage, VF -- V
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.6
15
IT07151
C -- VR
2
f=1MHz
(1)
(2) (4)(3)
0.5
0.4
Rectangular wave
0.3
θ
0.2
360°
Sine wave
0.1
180°
360°
0
0
10
Reverse Voltage, VR -- V
PF(AV) -- IO
0.7
5
0
IT07150
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
Ta=125°C
0.1
0.001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Average Output Current, IO -- A
IT07152
100
7
5
3
2
10
0.1
2
3
5
7
1.0
2
3
Reverse Voltage, VR -- V
5
7
10
2
IT07153
IFSM -- t
12
Surge Forward Current, IFSM(Peak) -- A
IR -- VR
100000
10000
Ta
=1
2
10 5°C
0°
C
75
°C
50
°C
25
°C
Forward Current, IF -- A
10
7
5
3
2
Current waveform 50Hz sine wave
10
IS
20ms
t
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
IT00626
No. A0781-5/6
MCH5837
Note on usage : Since the MCH5837 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0781-6/6