SCH2830 Ordering number : ENA0861 SANYO Semiconductors DATA SHEET SCH2830 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a P-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS --20 ID Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V ±10 V --1 A --4 A 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C 30 V [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM Mounted on a ceramic board (900mm2✕0.8mm) Average Output Current IO Mounted in Cu-foiled area of 0.72mm2✕0.03mm on glass epoxy board Marking : XF 30 V 0.7 A 0.5 A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62707PE TI IM TC-0000761 No. A0861-1/6 SCH2830 Continued from preceding page. Parameter Symbol Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Conditions Ratings Unit 50Hz sine wave, 1 cycle 3 A --55 to +125 °C --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA --0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--0.5A 0.72 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage µA ±10 µA --1.4 1.2 V S 380 500 mΩ 540 760 mΩ 670 1000 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time Fall Time V --1 ID=--0.5A, VGS=--4V ID=--0.3A, VGS=--2.5V ID=--0.1A, VGS=--1.8V VDS=--10V, f=1MHz Turn-OFF Delay Time --20 115 pF VDS=--10V, f=1MHz 23 pF VDS=--10V, f=1MHz See specified Test Circuit. 15 pF 8 ns tr td(off) See specified Test Circuit. 6 ns See specified Test Circuit. 15 ns tf See specified Test Circuit. 7 ns Total Gate Charge Qg nC Qgs VDS=--10V, VGS=--4V, ID=--1A VDS=--10V, VGS=--4V, ID=--1A 1.5 Gate-to-Source Charge 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1A 0.3 Diode Forward Voltage VSD IS=--1A, VGS=0V nC --0.89 --1.2 V 0.42 0.48 V 120 µA [SBD] Reverse Voltage VR Forward Voltage VF IR=0.5mA IF=0.5A Reverse Current Interterminal Capacitance IR C VR=15V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions 30 V 13 pF 10 ns Electrical Connection unit : mm (typ) 7028-003 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain 1 2 3 Top view 1.6 0.2 1.5 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No. A0861-2/6 SCH2830 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --10V VIN Duty≤10% ID= --0.5A RL=20Ω D 50Ω VOUT PW=10µs D.C.≤1% 100Ω 10Ω 100mA VIN 10µs G 10mA 100mA 0V --4V --5V trr SCH2830 50Ω S --0.5 --0.4 --0.3 VGS= --1.5V --1.0 --0.8 --0.6 --0.2 --0.4 --0.1 --0.2 0 °C °C --1.2 Ta =7 5 --2 °C 5°C --0.6 --1.4 °C --2 25 --0.7 Ta = --1.6 .0V 75 --1.8 Drain Current, ID -- A Drain Current, ID -- A [MOSFET] VDS= --10V 25° C .5V V --2.0 --0.8 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 Drain-to-Source Voltage, VDS -- V IT03501 [MOSFET] RDS(on) -- VGS Ta=25°C 1000 900 ID= --0.5A 800 --0.3A 700 --0.1A 600 500 400 300 200 100 0 0 --2 --4 --6 Gate-to-Source Voltage, VGS -- V --8 IT12362 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 IT03502 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID -- VGS [MOSFET] --2 --3 . --4. 0 --0.9 0V ID -- VDS --1.0 --2 5 P.G 900 A --0.1 I D= , V 1.8 .3A = -= --0 I VGS D , V .5 = --2 VGS --0.5A ,I = --4.0V D = V GS 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT12363 No. A0861-3/6 SCH2830 25 = -- 7 Ta °C C 75° 5 3 2 3 2 --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 2 --0.1 3 5 Drain Current, ID -- A SW Time -- ID 3 --0.01 --0.4 7 --1.0 IT03505 [MOSFET] --0.6 --0.7 --0.5 --0.8 --1.1 --1.2 f=1MHz 100 5 3 2 td(off) 10 td(on) 7 tf 5 Ciss Ciss, Coss, Crss -- pF 7 tr 100 7 5 3 Coss 2 3 Crss 1.0 --0.1 10 2 3 5 7 2 --1.0 Drain Current, ID -- A 3 0 [MOSFET] --10 7 5 VDS= --10V ID= --1A --3.5 --2 IDP= --4A 3 2 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --1.0 7 5 ID= --1A 3 2 --0.1 7 5 3 2 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC IT03509 PD -- Ta 0.8 M 0.6 ou nte do na 0.4 ce ram ic bo ard (9 00 mm 40 60 80 --8 --10 --12 --14 --16 --18 --20 --0.01 --0.01 PW≤10µs 10 0µ 10 s m s 1 10 m s 0m DC s op er ati on (T a= 25 °C Operation in this ) area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12618 2 ✕0 .8m m) 1u 0 20 --6 [MOSFET] 0.2 0 1.6 --4 Drain-to-Source Voltage, VDS -- V IT03508 ASO [MOSFET] IT03507 VGS -- Qg --4.0 Gate-to-Source Voltage, VGS -- V --1.0 2 2 Allowable Power Dissipation, PD -- W --0.9 Diode Forward Voltage, VSD -- V IT03506 Ciss, Coss, Crss -- VDS [MOSFET] 3 VDD= --10V VGS= --4V 2 Switching Time, SW Time -- ns --1.0 7 5 --25° C 1.0 [MOSFET] VGS=0V 3 2 25°C 2 C 25° IS -- VSD --10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS= --10V Ta= 75° C yfs -- ID 3 100 120 Ambient Temperature, Ta -- °C 140 nit 160 IT12619 No. A0861-4/6 SCH2830 IF -- VF 1.0 [SBD] 7 10000 7 5 3 2 Reverse Current, IR -- µA 3 2 0.1 7 25° C 100 °C 75°C 50°C 25°C 5 3 Ta= 1 Forward Current, IF -- A 5 2 0.01 0 0.1 0.2 0.3 0.4 0.5 PF(AV) -- IO 0.35 0.6 [SBD] Ta=125°C 100°C 1000 7 5 3 2 75°C 50°C 100 7 5 3 2 25°C 10 7 5 3 2 1.0 0 5 10 15 Reverse Voltage, VR -- V IT07927 [SBD] C -- VR 7 f=1MHz (1) 0.30 (2) (4) (3) θ 360° 0.25 Sine wave 0.20 180° 360° 0.15 0.10 (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.05 0 0 0.1 0.2 0.3 0.4 0.5 Average Output Current, IO -- A IFSM -- t 3.5 20 IT10260 [SBD] Rectangular wave Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V Surge Forward Current, IFSM(Peak) -- A IR -- VR 3 2 0.6 IT08187 5 3 2 10 7 5 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT06807 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No. A0861-5/6 SCH2830 Note on usage : Since the SCH2830 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0861-6/6