ECH8306 Ordering number : ENA0302 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8306 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 Gate-to-Source Voltage VGSS ±20 V --2 A Drain Current (DC) ID V Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --12 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--100V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1A RDS(on)1 RDS(on)2 ID=--1A, VGS=--10V ID=--0.5A, VGS=--4V Input Capacitance Ciss 1600 pF Output Capacitance Coss VDS=--20V, f=1MHz VDS=--20V, f=1MHz 85 pF 72 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time --100 V ±10 µA µA --2.6 V 170 225 mΩ 195 275 mΩ --1 --1.2 2.9 4.9 S VDS=--20V, f=1MHz See specified Test Circuit. 13.5 ns See specified Test Circuit. 10 ns See specified Test Circuit. 190 ns See specified Test Circuit. 54 ns 33 nC 3.6 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--50V, VGS=--10V, ID=--2A VDS=--50V, VGS=--10V, ID=--2A VDS=--50V, VGS=--10V, ID=--2A Diode Forward Voltage VSD IS=--2A, VGS=0V 6.0 --0.8 nC --1.2 V Marking : JH Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12506PE MS IM TB-00001929 No. A0302-1/4 ECH8306 Package Dimensions unit : mm 7011A-002 Electrical Connection 8 7 6 5 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top View 0.25 2.9 0.15 8 5 2.3 2.8 0 to 0.02 2 3 Top view 4 4 1 0.65 0.3 0.9 0.25 1 0.07 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD= --50V VIN 0V --10V ID= --1A RL=50Ω VOUT VIN D PW=10µs D.C.≤1% G ECH8306 50Ω ID -- VDS Drain Current, ID -- A --1.0 --0.5 0 --3 --2 --1 25°C --25°C --4 .0 --3 V .0V -2 =S VG --5 . 0V VDS= --10V 0V --1.5 ID -- VGS --4 .5V --8 . --15 .0 V --10.0V --2.0 Drain Current, ID -- A S Ta=7 5°C P.G 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT10633 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 IT10634 No. A0302-2/4 ECH8306 RDS(on) -- VGS 250 ID= --0.5A 150 100 50 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 5° C 2 = Ta --2 °C 75 1.0 C 5° 7 2 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --40 --20 0 20 40 60 80 100 120 140 160 IT10636 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 5 3 100 tf 7 5 3 2 td(on) 7 5 --0.01 1000 7 5 3 2 Crss 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 7 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V 3 2 ≤10µs 10 0µ s IDP= --12A --6 20 25 Total Gate Charge, Qg -- nC 30 35 IT10641 ) 15 °C 3 2 Operation in this area is limited by RDS(on). 25 a= (T --1 s on --2 10 0m 3 2 --0.1 7 5 0 10 ati --3 --1.0 7 5 er --4 1m s m s 10 ID= --2A op --5 3 2 DC Drain Current, ID -- A --7 --30 IT10640 ASO --10 7 5 --8 5 --5 IT10639 VGS -- Qg 0 Coss 100 VDS= --50V ID= --2A --9 --1.2 IT10638 Ciss 7 Drain Current, ID -- A --10 --1.0 f=1MHz 2 tr 10 --0.8 Ciss, Coss, Crss -- VDS 3 Ciss, Coss, Crss -- pF td(off) 2 --0.6 Diode Forward Voltage, VSD -- V VDD= --50V VGS= --10V 7 --0.4 IT10637 SW Time -- ID 1000 Switching Time, SW Time -- ns 50 --0.01 7 5 3 2 3 0.1 --0.01 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 3 V -10 =S G V Ambient Temperature, Ta -- °C VDS= --10V 7 , 0A IT10635 yfs -- ID 10 --16 -4V =S VG -1. =ID 150 °C --4 , 5A -0. =ID 200 Ta= 75 --2 250 0 --60 0 0 300 C 300 350 --25° --1A 25°C 350 200 RDS(on) -- Ta 400 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 2 IT10642 No. A0302-3/4 ECH8306 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 1.6 M ou nt 1.4 1.2 ed on ac er 1.0 am ic bo ar 0.8 d (9 00 m 0.6 m2 ✕ 0. 8m 0.4 m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10643 Note on usage : Since the ECH8306 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0302-4/4