FTD1029 Ordering number : ENA0532 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FTD1029 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V --3 A Drain Current (DC) ID Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% --15 A Mounted on a ceramic board (1000mm2✕0.8mm) 1unit 0.8 W PT Tch Mounted on a ceramic board (1000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Power Dissipation 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V --30 IDSS IGSS VDS=--10V, ID=--1mA VDS=--10V, ID=--2A --1.2 Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--2A, VGS=--10V ID=--1A, VGS=--4.5V Input Capacitance RDS(on)3 Ciss 570 pF 100 pF 85 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions Output Capacitance Coss ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz Marking : D1029 2.4 V --1 µA ±10 µA --2.6 4 V S 56 73 mΩ 100 140 mΩ 117 164 mΩ Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706PE MS IM TC-00000171 No. A0532-1/4 FTD1029 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 11 Rise Time tr td(off) See specified Test Circuit. 13 ns See specified Test Circuit. 49 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 36 ns VDS=--10V, VGS=--10V, ID=--3A 11.7 nC 2.04 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A VDS=--10V, VGS=--10V, ID=--3A Diode Forward Voltage VSD IS=--3A, VGS=0V Package Dimensions 0.95 2.64 --0.84 8 7 6 1 4 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 0.05 6.4 4.5 0.5 5 SANYO : TSSOP8 0.25 0.95 V 5 0.125 8 nC --1.2 Electrical Connection unit : mm (typ) 7006A-002 3.0 ns 0.425 0.65 1 2 3 4 Top view Switching Time Test Circuit VDD= --15V VIN 0V --10V ID= --3A RL=5Ω VIN D VOUT PW=10µs D.C.≤1% G FTD1029 P.G 50Ω S No. A0532-2/4 FTD1029 ID -- VDS --4 .5 V --3.0 --1.5 --1.0 --2.0 --1.5 --1.0 --25°C --3.0V --2.5 Ta=7 5°C --2.0 Drain Current, ID -- A --2.5 VDS= --10V --5. 0 --10.0 --0.5 --0.5 C Drain Current, ID -- A --3.0 ID -- VGS --3.5 V --4 .0V --8.0 V V --6.0 V --3.5 25° VGS= --2.5V 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 --1.0 RDS(on) -- VGS 200 --1 --2 --3 --4 Gate-to-Source Voltage, VGS -- V IT08948 IT08949 RDS(on) -- Ta 200 --2A ID= --1A 100 80 60 40 20 --2 --4 --6 --8 --10 --12 --14 --16 --18 10 7 5 yfs -- ID 3 2 1.0 7 5 = Ta °C 25 °C 25 °C 75 0.1 7 5 --20 0 20 40 60 80 100 120 140 160 IT08951 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A 5 7 --10 --0.001 --0.3 5 --0.5 --0.6 --0.7 --0.8 --0.9 Diode Forward Voltage, VSD -- V --1.0 --1.1 IT08953 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V 7 --0.4 IT08952 SW Time -- ID 1000 f=1MHz 7 Ciss 5 Ciss, Coss, Crss -- pF 3 2 100 td(off) 7 5 tf 3 2 3 2 Coss 100 Crss 7 tr td(on) 5 10 7 5 --0.01 --40 Ambient Temperature, Ta -- °C --10 7 5 3 2 -- 3 2 50 IT08950 VDS= --10V 0.01 --0.001 2 3 Switching Time, SW Time -- ns --20 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V V = --10 , V GS 2A I D= -- 0 --60 0 0 100 5°C 120 0V --4. S= G V V , --4.5 --1A S= I D= VG , --1A I D= 150 Ta= 7 140 --25° C 160 25° C 180 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT08954 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT08955 No. A0532-3/4 FTD1029 VGS -- Qg --10 --9 --10 7 5 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 VDS= --10V ID= --3.5A --7 --6 --5 --4 --3 --1 3 2 0 2 4 6 8 10 Total Gate Charge, Qg -- nC 1.2 12 IT08956 DC 10 0m op s er 3 2 --2 PW≤10µs 100 1m µs s 10 m s ID= --3A --1.0 7 5 --0.1 7 5 0 Allowable Power Dissipation, PD -- W 3 2 ASO IDP= --15A ati on Operation in this area is limited by RDS(on). (T a= 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1000mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT11557 Mounted on a ceramic board (1000mm2✕0.8mm) 1.0 0.8 To t al Di ss 0.6 1u nit 0.4 ip ati on 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11556 Note on usage : Since the FTD1029 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No. A0532-4/4