MCH6601 Ordering number : EN6458B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±10 V ID --0.2 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --0.8 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Conditions Ratings min typ ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±8V, VDS=0V --30 VDS=--10V, ID=--100µA VDS=--10V, ID=--50mA --0.4 Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--50mA, VGS=--4V ID=--30mA, VGS=--2.5V Input Capacitance RDS(on)3 Ciss ID=--1mA, VGS=--1.5V VDS=--10V, f=1MHz Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : FA VDS=--10V, f=1MHz VDS=--10V, f=1MHz 80 Unit max V --1 µA ±10 µA --1.4 110 V mS Ω 8 10.4 11 15.4 Ω 27 54 Ω 7.5 pF 5.7 pF 1.8 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 42806 MS IM TB-00002289 / O3105PE MS IM TB-00001865 / N2499 TS IM TA-2457 No.6458-1/4 MCH6601 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 24 Rise Time tr td(off) See specified Test Circuit. 55 ns See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 130 ns VDS=--10V, VGS=--10V, ID=--100mA 1.43 nC 0.18 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA VDS=--10V, VGS=--10V, ID=--100mA Diode Forward Voltage VSD IS=--100mA, VGS=0V Package Dimensions unit : mm 7022A-006 0.25 2.0 6 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view 4 2 3 0.65 nC --1.2 V Electrical Connection 2.1 1.6 0.25 --0.83 0 to 0.02 1 0.3 0.85 0.07 0.25 0.15 5 ns 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit VDD= --15V 0V --4V VIN ID= --50mA RL=300Ω PW=10µs D.C.≤1% VOUT D VIN G P.G 50Ω S ID -- VDS VDS= --10V --0.18 V .5 --0.04 --0.03 VGS= --1.5V --0.02 --0.01 --25 Ta= 25°C --0.12 C --0.05 --0.14 --0.10 75° --2.0V --0.06 °C --0.16 Drain Current, ID -- A --2 --6.0 --0.07 ID -- VGS --0.20 V --0.08 0V --4 . --0.09 --3 . --3.5V 0V --0.10 Drain Current, ID -- A MCH6601 --0.08 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 IT00077 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT00078 No.6458-2/4 MCH6601 RDS(on) -- VGS 30 25 20 15 --50mA ID= --30mA 5 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 10 --25°C 5 3 2 2 3 5 7 2 --0.1 Drain Current, ID -- A 3 I D= 10 0m --3 S= 0V --4. , VG A 50m -I D= 8 6 4 2 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 5 --0.7 C --25° Ta= 7 25°C 3 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT00085 3 IT00080 3 2 100 7 5 Ta=75°C 3 2 --25°C 2 3 25°C 5 7 2 --0.001 3 IT00082 yfs -- ID VDS= --10V 7 5 3 2 0.1 25°C 5°C 2 Ta= -- 75°C 7 5 3 2 2 3 5 7 2 --0.1 3 IT00084 SW Time -- ID VDD= --15V VGS= --4V 7 Switching Time, SW Time -- ns 7 5°C Source Current, IS -- A --0.1 2 --0.1 VGS= --1.5V 1000 2 --0.6 7 Drain Current, ID -- A 3 --0.01 --0.5 5 RDS(on) -- ID IT00083 VGS=0V 2 3 5 0.01 --0.01 160 IS -- VSD 5 2 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S .5V A 12 2 1.0 2 -S= , VG 25°C 3 IT00081 16 14 --25°C 5 10 --0.0001 RDS(on) -- Ta 18 7 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=75°C 25°C 1.0 --0.01 Ta=75°C 10 7 3 7 2 1000 5 2 3 IT00079 VGS= --2.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --10 RDS(on) -- ID 100 5 1.0 --0.01 0 0 VGS= --4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 10 RDS(on) -- ID 100 5 3 2 tf td(off) 100 7 tr 5 td(on) 3 2 10 --0.01 2 3 5 Drain Current, ID -- A 7 --0.1 IT00086 No.6458-3/4 MCH6601 Ciss, Coss, Crss -- VDS 100 f=1MHz 7 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 2 10 Ciss 7 Coss 5 3 2 Crss --10 --5 --15 --20 --25 --6 --5 --4 --3 --2 --30 Drain-to-Source Voltage, VDS -- V 0 0.2 0.4 0.6 Allowable Power Dissipation, PD -- W IDP= --0.8A 1m s 10 ms 3 ID= --0.2A 10 DC --0.1 0m s op era tio 7 n Operation in this area is limited by RDS(on). 5 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 1.0 1.2 1.4 1.6 IT00088 PD -- Ta 1.0 PW≤10µs 5 0.8 Total Gate Charge, Qg -- nC IT00087 ASO --1.0 Drain Current, ID -- A --7 0 0 2 --8 --1 1.0 2 VDS= --10V ID= --100mA --9 5 7 VGS -- Qg --10 M 0.8 ou nt ed on ac er 0.6 am ic bo ar d( 90 0.4 0m m2 ✕0 .8m 0.2 m )1 un it 0 3 5 IT01733 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT01734 Note on usage : Since the MCH6601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.6458-4/4