SANYO MCH3456_06

MCH3456
Ordering number : EN8162A
SANYO Semiconductors
DATA SHEET
MCH3456
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
15
Gate-to-Source Voltage
VGSS
±10
V
ID
1.8
A
Drain Current (DC)
V
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
7.2
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2✕0.8mm)
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=15V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
yfs
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
RDS(on)1
RDS(on)2
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
RDS(on)3
RDS(on)4
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
Conditions
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : LH
td(off)
tf
Ratings
min
typ
Unit
max
15
V
0.4
1.5
1
µA
±10
µA
1.3
2.6
V
S
120
160
mΩ
165
240
mΩ
ID=0.1A, VGS=1.8V
ID=0.1A, VGS=1.5V
230
350
mΩ
310
750
mΩ
VDS=10V, f=1MHz
VDS=10V, f=1MHz
105
pF
30
pF
VDS=10V, f=1MHz
See specified Test Circuit.
24
pF
7.8
ns
See specified Test Circuit.
27
ns
See specified Test Circuit.
18
ns
See specified Test Circuit.
22
ns
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12006PE MS IM TB-00002043 / D1504PE TS IM TB-00000382 No.8162-1/4
MCH3456
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
nC
Qgs
VDS=10V, VGS=4V, ID=1.8A
VDS=10V, VGS=4V, ID=1.8A
1.86
Gate-to-Source Charge
0.33
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=1.8A
0.55
Diode Forward Voltage
VSD
IS=1.8A, VGS=0V
0.88
Package Dimensions
unit : mm
7019A-003
VDD=10V
VIN
4V
0V
0.25
3
ID=1A
RL=10Ω
VOUT
VIN
0 to 0.02
1.6
2.1
V
Switching Time Test Circuit
0.15
2.0
nC
1.2
D
PW=10µs
D.C.≤1%
0.25
1
2
0.65
G
0.85
0.3
P.G
50Ω
MCH3456
S
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.4
1.2
1.0
0.8
0.6
25
°C
0.4
VGS=1.0V
0.2
0
C
0.8
1.4
--25
°
2.0
1.5V
Ta=
75°
C
Drain Current, ID -- A
V
2.5
1.6
7
C 5°C
°C
Ta=
--25
1.8
V 3.0V
6.0V 4.
0V
VDS=10V
8.0V
Drain Current, ID -- A
1.2
ID -- VGS
2.0
25°
ID -- VDS
1.6
0
0
0.1
0.3
0.2
0.4
0.5
0.6
0.7
Drain-to-Source Voltage, VDS -- V
0
0.8
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
400
0.2
IT08577
1.8
2.0
IT08578
RDS(on) -- Ta
400
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
350
300
250
0.5A
ID=0.1A
200
1.0A
150
100
50
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
IT08579
350
300
V
1.8
S=
, VG
0.1A
250
I D=
V
=2.5
, VGS
A
5
.
0
I D=
=4.0V
, VGS
A
0
.
I D=1
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT08580
No.8162-2/4
MCH3456
VGS=0V
2
1.0
2
-25
=-
1.0
Ta
7
°C
°C
75
5
3
7
5
3
2
0.1
7
5
3
2
--25
°C
2
25°
C
C
5°
°C
3
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
0.01
0.4
3
0.5
0.6
0.8
0.9
1.0
1.1
IT08582
Ciss, Coss, Crss -- VDS
3
VDD=10V
VGS=4V
2
0.7
Diode Forward Voltage, VSD -- V
IT08581
SW Time -- ID
3
f=1MHz
2
100
7
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
IS -- VSD
3
Ta=
75
5
yfs -- ID
VDS=10V
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
7
tf
5
3
td(off)
2
td(on)
10
7
tr
5
Ciss
100
7
5
Coss
Crss
3
2
3
2
1.0
0.01
10
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
3.5
10
7
5
Drain Current, ID -- A
2.5
2.0
1.5
1.0
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.5
0.2
0.4
0.6
0.8
1.0
4
6
1.2
1.4
1.6
1.8
Total Gate Charge, Qg -- nC
2.0
IT08585
8
10
12
14
16
IT08584
ASO
2
3.0
0
2
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=1.8A
0
IDP=7.2A
<10µs
1m 100
s µs
10
ID=1.8A
m
s
10
DC
0
m
op
s
er
ati
on
(T
a=
25
°C
Operation in this
)
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
IT08695
PD -- Ta
1.0
Allowable Power Dissipation, PD -- W
0
IT08583
VGS -- Qg
4.0
Gate-to-Source Voltage, VGS -- V
3
0.8
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
0.4
(9
00
mm
0.2
2
✕0
.8
mm
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT08696
No.8162-3/4
MCH3456
Note on usage : Since the MCH3456 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
PS No.8162-4/4