MCH3456 Ordering number : EN8162A SANYO Semiconductors DATA SHEET MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 15 Gate-to-Source Voltage VGSS ±10 V ID 1.8 A Drain Current (DC) V Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 7.2 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=15V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=0.5A, VGS=2.5V RDS(on)3 RDS(on)4 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Marking : LH td(off) tf Ratings min typ Unit max 15 V 0.4 1.5 1 µA ±10 µA 1.3 2.6 V S 120 160 mΩ 165 240 mΩ ID=0.1A, VGS=1.8V ID=0.1A, VGS=1.5V 230 350 mΩ 310 750 mΩ VDS=10V, f=1MHz VDS=10V, f=1MHz 105 pF 30 pF VDS=10V, f=1MHz See specified Test Circuit. 24 pF 7.8 ns See specified Test Circuit. 27 ns See specified Test Circuit. 18 ns See specified Test Circuit. 22 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12006PE MS IM TB-00002043 / D1504PE TS IM TB-00000382 No.8162-1/4 MCH3456 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=10V, VGS=4V, ID=1.8A VDS=10V, VGS=4V, ID=1.8A 1.86 Gate-to-Source Charge 0.33 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=1.8A 0.55 Diode Forward Voltage VSD IS=1.8A, VGS=0V 0.88 Package Dimensions unit : mm 7019A-003 VDD=10V VIN 4V 0V 0.25 3 ID=1A RL=10Ω VOUT VIN 0 to 0.02 1.6 2.1 V Switching Time Test Circuit 0.15 2.0 nC 1.2 D PW=10µs D.C.≤1% 0.25 1 2 0.65 G 0.85 0.3 P.G 50Ω MCH3456 S 0.07 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.4 1.2 1.0 0.8 0.6 25 °C 0.4 VGS=1.0V 0.2 0 C 0.8 1.4 --25 ° 2.0 1.5V Ta= 75° C Drain Current, ID -- A V 2.5 1.6 7 C 5°C °C Ta= --25 1.8 V 3.0V 6.0V 4. 0V VDS=10V 8.0V Drain Current, ID -- A 1.2 ID -- VGS 2.0 25° ID -- VDS 1.6 0 0 0.1 0.3 0.2 0.4 0.5 0.6 0.7 Drain-to-Source Voltage, VDS -- V 0 0.8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 400 0.2 IT08577 1.8 2.0 IT08578 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 250 0.5A ID=0.1A 200 1.0A 150 100 50 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT08579 350 300 V 1.8 S= , VG 0.1A 250 I D= V =2.5 , VGS A 5 . 0 I D= =4.0V , VGS A 0 . I D=1 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08580 No.8162-2/4 MCH3456 VGS=0V 2 1.0 2 -25 =- 1.0 Ta 7 °C °C 75 5 3 7 5 3 2 0.1 7 5 3 2 --25 °C 2 25° C C 5° °C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 0.01 0.4 3 0.5 0.6 0.8 0.9 1.0 1.1 IT08582 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 2 0.7 Diode Forward Voltage, VSD -- V IT08581 SW Time -- ID 3 f=1MHz 2 100 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns IS -- VSD 3 Ta= 75 5 yfs -- ID VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 7 tf 5 3 td(off) 2 td(on) 10 7 tr 5 Ciss 100 7 5 Coss Crss 3 2 3 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3.5 10 7 5 Drain Current, ID -- A 2.5 2.0 1.5 1.0 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.5 0.2 0.4 0.6 0.8 1.0 4 6 1.2 1.4 1.6 1.8 Total Gate Charge, Qg -- nC 2.0 IT08585 8 10 12 14 16 IT08584 ASO 2 3.0 0 2 Drain-to-Source Voltage, VDS -- V VDS=10V ID=1.8A 0 IDP=7.2A <10µs 1m 100 s µs 10 ID=1.8A m s 10 DC 0 m op s er ati on (T a= 25 °C Operation in this ) area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT08695 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 0 IT08583 VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V 3 0.8 M ou nte do na 0.6 ce ram ic bo ard 0.4 (9 00 mm 0.2 2 ✕0 .8 mm ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08696 No.8162-3/4 MCH3456 Note on usage : Since the MCH3456 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No.8162-4/4