2SK3977 Ordering number : ENA0391 SANYO Semiconductors DATA SHEET 2SK3977 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 Gate-to-Source Voltage VGSS ±20 V ID 10 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 40 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V Ratings min typ Unit max 100 V 1 µA ±10 µA VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A RDS(on)1 RDS(on)2 ID=6A, VGS=10V ID=6A, VGS=4.5V 70 92 mΩ 85 120 mΩ Input Capacitance Ciss 1560 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 130 pF VDS=20V, f=1MHz See specified Test Circuit. 83 pF 16 ns See specified Test Circuit. 55 ns See specified Test Circuit. 120 ns See specified Test Circuit. 80 ns Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf 1.2 6 2.6 10 V S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1506PA TI IM TC-00000323 No. A0391-1/4 2SK3977 Continued from preceding page. Symbol Ratings Conditions min Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=10A VDS=50V, VGS=10V, ID=10A Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=10A Diode Forward Voltage VSD IS=10A, VGS=0V unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 1.5 5.5 0.5 2 2.5 3 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 0.6 0.5 3 2.3 0.8 1 7.5 0.8 1.6 1 1.2 V 0.5 0.85 0.6 nC 1.2 7.0 1.5 4 0.85 0.7 nC nC 2.3 6.5 5.0 0.5 7.0 5.5 4 34 5.5 6 Package Dimensions 2.3 Unit max 0.95 Package Dimensions 6.5 5.0 typ 1.2 Parameter 1 : Gate 2 : Drain 3 : Source 4 : Drain 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit VDD=50V 10V 0V VIN ID=6A RL=8.33Ω VIN VOUT D PW=10µs D.C.≤1% G P.G 50Ω 2SK3977 S ID -- VDS VDS=10V 7 1.0 4 3 2 --25° C 1.5 5 Ta=7 5°C Drain Current, ID -- A 4.0V 2.0 6 25° C 6.0V 3.0V 3.0 10.0V Drain Current, ID -- A 3.5 2.5 ID -- VGS 8 8.0V 4.0 VGS=2.5V 1 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT10020 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 IT10021 No. A0391-2/4 2SK3977 RDS(on) -- VGS 50 0 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 7 5 3 5 --2 = Ta 1.0 7 7 5 °C C 5° 2 C 5° 3 2 20 40 3 5 7 0.1 2 3 5 7 1.0 2 3 80 100 120 140 160 IT10955 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 5 7 10 IT10024 0.2 0.6 Ciss, Coss, Crss -- pF 100 tf 5 3 Ciss 1000 7 5 3 2 Coss 100 7 tr 2 1.2 IT10025 f=1MHz 2 7 1.0 3 td(off) 2 0.8 Ciss, Coss, Crss -- VDS 5 VDD=50V VGS=10V 3 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 5 td(on) Crss 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 0 7 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V IT10026 VGS -- Qg 10 7 5 VDS=50V ID=10A 9 60 0.001 2 Drain Current, ID -- A Switching Time, SW Time -- ns 0 10 7 5 3 2 10 2 --20 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 2 --40 IT10954 VDS=10V 0.1 0.01 ASO IDP=40A PW≤10µs 3 2 6 5 4 3 2 10 7 5 ID=10A s 7 1m Drain Current, ID -- A s 8 60 IT10027 0µ 10 Gate-to-Source Voltage, VGS -- V 0 --60 16 yfs -- ID 3 50 Ta=7 5°C 2 =6A , ID V 4 = V GS =6A , ID V 0 =1 V GS 100 25°C 100 150 --25°C 150 0 RDS(on) -- Ta 200 Ta=25°C ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 C 3 op Operation in this area is limited by RDS(on). 1.0 7 5 m 0m s s er 2 10 10 D at io n (T c= 25 °C ) 3 2 1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC 30 35 IT10956 Tc=25°C Single pulse 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT10957 Drain-to-Source Voltage, VDS -- V No. A0391-3/4 2SK3977 PD -- Ta 1.0 0.8 No he at sin k 0.6 PD -- Tc 25 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 0.4 0.2 0 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10958 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT10959 Note on usage : Since the 2SK3977 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0391-4/4