2SK4067 Ordering number : ENA0565 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4067 General-Purpose Switching Device Applications Features • • Motor drive applications. 4.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V 8 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 32 A 1 W Allowable Power Dissipation PD 10 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A RDS(on)1 RDS(on)2 ID=8A, VGS=10V ID=4A, VGS=4.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K4067 Ratings min typ Unit max 30 V 1 ±10 1.5 2.6 2.5 4.4 µA µA V S 85 115 mΩ 155 220 mΩ 260 pF 65 pF 40 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2006PA TI IM TB-00002394 No. A0565-1/4 2SK4067 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 8 ns See specified Test Circuit. 19 ns tf See specified Test Circuit. 8 ns Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A Diode Forward Voltage VSD IS=8A, VGS=0V 1.0 Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 0.5 1.5 5.5 7.0 5.5 4 0.5 1 2 2.3 0.8 1.2 7.5 0.8 1.6 0.6 1 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.85 0.85 0.7 SANYO : TP V 7.0 1.5 0.5 nC 1.2 2.3 6.5 5.0 2.3 4 nC nC 1.05 Package Dimensions 6.5 5.0 6 1.2 1.2 Turn-OFF Delay Time 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit VDD=15V 10V 0V VIN ID=3.5A RL=4.3Ω VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω S 2SK4067 No. A0565-2/4 2SK4067 V 5 4.0V 4 3 3.0V 2 4.0 3.5 3.0 2.5 2.0 Ta= 75° C --25 °C Drain Current, ID -- A 4.5 4.5 1.5 1.0 1 VGS=2.5V 0.5 0 7 25° 5°C C Ta= -2 V 8 .0 6 VDS=10V 5.0 5°C 0V 6. 10 .0V Drain Current, ID -- A 7 ID -- VGS 5.5 25°C ID -- VDS 8 0 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1.0 0 2 3 4 5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 300 1 IT11829 6 IT11830 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=4A 200 8A 150 100 50 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5 °C 25 5°C --2 = Ta °C 75 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --20 20 40 60 80 100 120 140 160 IT11832 VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 1.4 IT11834 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V f=1MHz 7 5 3 Ciss, Coss, Crss -- pF td (off) 2 tf td(on) 10 7 5 tr 3 2 1.0 0.1 0 Diode Forward Voltage, VSD -- V SW Time -- ID 100 5 --40 IS -- VSD 0.01 0.2 5 7 10 IT11833 Drain Current, ID -- A V =10.0 VGS 50 3 2 2 7 100 10 7 5 7 2 A, I D=8 Ambient Temperature, Ta -- °C 10 3 I D= 150 IT11831 VDS=10V 0.1 0.01 Switching Time, SW Time -- ns 10 yfs -- ID 2 4.5V S= VG , 4A 200 0 --60 0 2 250 25°C --25°C 250 Tc=7 5°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C Ciss 3 2 100 7 5 Coss 3 Crss 2 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT11835 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 IT11836 No. A0565-3/4 2SK4067 VGS -- Qg VDS=10V ID=8A 8 6 4 2 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 7 ≤10µs 10 ms ID=8A 10 7 5 0.8 0.6 0.4 0.2 0µ 1m s s 0m 3 2 s DC 1.0 7 5 op era tio n 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 IT11839 PD -- Tc 12 1.0 10 10 IT11837 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 6 IDP=32A 0.01 0.01 PD -- Ta 1.2 ASO 7 5 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 10 10 8 6 4 2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11840 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT11841 Note on usage : Since the 2SK4067 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0565-4/4