FW248 Ordering number : ENA0672 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW248 General-Purpose Switching Device Applications Features • • • • Motor drive application. Low ON-resistance. 4V drive. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 45 Gate-to-Source Voltage VGSS ±20 V 6 A 7 A Drain Current (DC) ID Drain Current (PW≤10s) ID IDP PD Duty cycle≤1% PT Tch Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s Channel Temperature Storage Temperature Tstg Drain Current (PW≤10µs) Allowable Power Dissipation Total Dissipation V PW≤10µs, duty cycle≤1% 24 A Mounted on a ceramic board (1500mm2✕0.8mm) 1unit, PW≤10s 1.8 W 2.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : W248 Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=45V, VGS=0V VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A RDS(on)1 RDS(on)2 ID=6A, VGS=10V ID=3A, VGS=4V Ratings min typ Unit max 45 V 1.2 3.7 1 µA ±10 µA 2.6 6.2 V S 26 34 mΩ 42 59 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13107PA TI IM TC-00000398 No. A0672-1/4 FW248 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ VDS=20V, f=1MHz VDS=20V, f=1MHz Unit max 1040 pF 145 pF VDS=20V, f=1MHz See specified Test Circuit. 105 pF 14 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) See specified Test Circuit. 80 ns See specified Test Circuit. 85 ns tf Qg See specified Test Circuit. 70 ns VDS=24V, VGS=10V, ID=6A 23 nC Gate-to-Source Charge Qgs nC Qgd VDS=24V, VGS=10V, ID=6A VDS=24V, VGS=10V, ID=6A 3.5 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=6A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 5.0 nC 0.83 Package Dimensions 1.2 V Switching Time Test Circuit unit : mm (typ) 7005-003 VDD=24V 5 10V 0V 0.3 8 VIN ID=6A RL=4Ω 6.0 4.4 VIN VOUT D PW=10µs D.C.≤1% G 1 4 0.2 1.5 1.8 MAX 0.43 1.27 0.595 P.G 50Ω S FW248 0.1 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 ID -- VDS V VDS=10V 2 1 °C 6 Ta=7 5 3 8 4 2 VGS=2.5V --25 °C 3.0V 25° C Drain Current, ID -- A 10 10.0V 4 ID -- VGS 12 3.5 6.0V 4.5V 5 Drain Current, ID -- A 4.0V 6 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 1.0 IT12054 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Gate-to-Source Voltage, VGS -- V 3.6 4.0 IT12055 No. A0672-2/4 FW248 RDS(on) -- VGS Ta=25°C 60 ID=3A 6A 40 30 20 10 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 5°C --2 = Tc C 25° °C 75 1.0 5 2 3 5 7 2 1.0 3 5 7 Drain Current, ID -- A 75 100 125 IT12057 VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.6 0.8 1.0 1.2 IT12059 Ciss, Coss, Crss -- VDS f=1MHz 2 Ciss Ciss, Coss, Crss -- pF 2 td(off) 100 7 tf 5 3 tr 2 td(on) 1000 7 5 3 2 Coss Crss 10 7 100 5 7 3 0.1 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 0 3 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 5 10 15 Total Gate Charge, Qg -- nC 10 20 25 IT12062 15 20 30 25 35 40 Drain-to-Source Voltage, VDS -- V VDS=24V ID=6A 9 5 IT12060 VGS -- Qg 10 0 50 10 7 5 3 2 3 3 25 Diode Forward Voltage, VSD -- V VDD=24V VGS=10V 5 Switching Time, SW Time -- ns 2 10 IT12058 SW Time -- ID 7 0 IS -- VSD 0.01 7 5 3 2 0.001 0.2 7 3 0.1 --25 3 2 7 2 10 Ambient Temperature, Ta -- °C 10 3 20 IT12056 VDS=10V 5 A I =6 10V, D = S VG 30 0 --50 10 yfs -- ID 2 40 25° C 3 =3A 4V, I D = VGS 50 5°C 2 60 Ta= 7 50 70 --25° C 70 0 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 10 7 5 3 2 ASO IDP=24A ID=6A 10 m s 0m s ≤10µs 10 1m 0µs s 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 45 IT12061 10 s op er Operation in this area is limited by RDS(on). ati on Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm), 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 100 IT12063 No. A0672-3/4 FW248 PD -- Ta Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 2.2 2.0 1.8 To t 1.5 al Di 1u ss nit 1.0 ip ati on 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12064 Allowable Power Dissipation(FET1), PD -- W Allowable Power Dissipation, PD -- W 2.5 PD (FET1) -- PD (FET2) 2.2 Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation(FET2), PD -- W 2.0 2.2 IT12065 Note on usage : Since the FW248 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0672-4/4