SANYO MCH6731

MCH6731
Ordering number : ENN7708
MCH6731
PNP Epitaxial Planar Silicon Transistor
Schottky Barrier Diode
DC / DC Converter Applications
Features
•
•
Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing
high-density mounting.
Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
--15
V
Collector-to-Emitter Voltage
VCEO
--12
V
Emitter-to-Base Voltage
VEBO
--5
V
IC
--1
A
Collector Current
Collector Current (Pulse)
ICP
PC
Collector Dissipation
Mounted on a ceramic board (600mm2✕0.8mm)
--2
A
0.85
W
150
°C
--55 to +125
°C
VRRM
VRSM
15
V
15
V
IO
0.5
A
Junction Temperature
Tj
Storage Temperature
Tstg
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
2
A
Junction Temperature
IFSM
Tj
50Hz sine wave, 1 cycle
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : PF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004 TS IM TB-00000071 No.7708-1/5
MCH6731
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[TR]
Collector Cutoff Current
ICBO
VCB=--12V, IE=0
--0.1
µA
Emitter Cutoff Current
IEBO
hFE
VEB=--4V, IC=0
--0.1
µA
DC Current Gain
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Storage Time
Fall Time
ton
tstg
tf
VCE=--2V, IC=--10mA
VCE=--2V, IC=--50mA
300
VCB=--10V, f=1MHz
IE=--10µA, IC=0
See specified Test Circuit.
MHz
6
IC=--400mA, IB=--20mA
IC=--400mA, IB=--20mA
IC=--10µA, IE=0
IC=--1mA, RBE=∞
700
450
pF
--120
--180
mV
--0.9
--1.2
V
--15
V
--12
V
--5
V
30
ns
See specified Test Circuit.
75
ns
See specified Test Circuit.
15
ns
[Di]
Reverse Voltage
VR
Forward Voltage
VF
IR=0.5mA
IF=0.5A
Reverse Current
Interterminal Capacitance
IR
C
VR=6V
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
12
V
0.40
0.45
V
90
µA
13
pF
10
ns
0.25
Package Dimensions
unit : mm
2191A
0.3
5
6
3 2
0.65
1
0.15
0.07
1.6
0.25
2.1
4
2.0
6
5
4
1
2
3
0.85
(Bottom view)
(Top view)
1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)
SANYO : MCPH6
Electrical Connection
6
5
4
1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)
1
2
3
Top view
No.7708-2/5
MCH6731
Switching Time Test Circuit
trr Specified Circuit
[TR]
[Di]
IB1
RB
VR
100Ω
10Ω
10µs
+
+
220µF
470µF
50Ω
50Ω
RL
100mA 100mA
INPUT
Duty≤10%
OUTPUT
IB2
10mA
PW=20µs
D.C.≤1%
--5V
VBE=5V
trr
VCC= --5V
IC=20IB1= --20IB2= --400mA
IC -- VCE
[TR]
VCE= --2V
--7mA
--1000
--600
--3mA
--500
--2mA
--400
--300
--1mA
--200
--0.5mA
--800
--600
--400
--200
C
--700
--25°
--5mA
5°C 25
°C
--800
IC -- VBE
--1200
Ta=
7
A
--30
m
A
mA
A
m --10
5
--1
--20
m
Collector Current, IC -- mA
--900
[TR]
Collector Current, IC -- mA
--1000
--100
0
0
IB=0
Collector-to-Emitter Voltage, VCE -- mV
hFE -- IC
1000
--25°C
3
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
--1000
--100
5°C
=7
Ta
5°C
--2
7
5
25
3
°C
2
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05098
--1.2
IT05095
[TR]
--100
7
5
3
2
°C
75
5°C
--2
°C
25
Ta=
2
5 7 --100
--10
7
5
3
2
2
3
5 7 --10
3
2
3
Collector Current, IC -- mA
VBE(sat) -- IC
--10
5 7--1000
IT05097
[TR]
IC / IB=20
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
--1.0
IC / IB=20
[TR]
3
--0.8
3
2
--1.0
--1.0
5 7--1000
IT05096
5
--0.6
VCE(sat) -- IC
--1000
7
5
IC / IB=50
7
--0.4
Base-to-Emitter Voltage, VBE -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
DC Current Gain, hFE
25°C
2
--0.2
[TR]
Ta=75°C
5
--10
--1.0
0
IT05094
VCE= --2V
7
100
--1.0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
5
3
2
25°C
--1.0
Ta= --25°C
7
75°C
5
3
2
--0.1
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05099
No.7708-3/5
MCH6731
Cob -- VCB
3
[TR]
10
7
5
3
2
1.0
--1.0
2
3
5
7
2
--10
Collector-to-Base Voltage, VCB -- V
7
3
2
100
7
5
3
2
10
--1.0
3
2
Collector Current, IC -- A
ON-Resistance, Ron -- Ω
IB
1.0
7
5
3
7
2
--1.0
3
5
7
Base Current, IB -- mA
--10
IT06091
PC -- Ta
Collector Dissipation, PC -- W
1.0
0.9
0.85
0.8
2
3
5 7--1000
IT05101
[TR]
10µs
s
10
0
DC ms
op
er
ati
7
5
on
3
2
--0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
2
5
5 7 --100
1m
IC= --1A
3
2
3
3
s µs
0µ 00
10 5
ms
10
OUT
2
2
2
ASO
--1.0
0.1
--0.1
5 7 --10
ICP= --2A
1kΩ
3
3
Collector Current, IC -- mA
3
IN
5
2
[TR]
1kΩ
f=1MHz
5
IT05100
Ron -- IB
10
[TR]
VCE= --2V
7
Gain-Bandwidth Product, fT -- MHz
Output Capacitance, Cob -- pF
2
fT -- IC
1000
f=1MHz
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
Collector-to-Emitter Voltage, VCE -- V
IT06884
IR -- VR
[SBD]
[TR]
M
ou
nt
0.7
ed
0.6
on
ac
er
0.5
am
ic
bo
ar
0.4
d
(6
00
m
0.3
0.2
m2
✕
0.
8m
m
)
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT06885
IF -- VF
[SBD]
1.0
7
Reverse Current, IR -- µA
3
2
0.1
7
5
Ta=
125
°C
100
°C
75°
C
50°C
25°C
Forward Current, IF -- A
5
3
2
10000
7
5
3
2
Ta=125°C
100°C
1000
7
5
3
2
75°C
50°C
100
7
5
3
2
25°C
10
7
5
3
2
1.0
0.01
0
0.1
0.2
0.3
Forward Voltage, VF -- V
0.4
0.5
IT06886
0
5
10
Reverse Voltage, VR -- V
15
IT06887
No.7708-4/5
PF(AV) -- IO
0.9
Rectangular wave
(1)
[SBD]
θ
360°
0.6
Sine wave
0.5
180°
360°
0.4
0.3
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.2
0.1
0
0
0.2
0.4
0.6
[SBD]
f=1MHz
0.8
0.7
C -- VR
7
(2) (4) (3)
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
MCH6731
0.8
1.0
Average Forward Current, IO -- A
1.2
1.4
IT06888
5
3
2
10
7
5
1.0
2
3
5
7
2
10
Reverse Voltage, VR -- V
3
IT06889
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.
PS No.7708-5/5