Ordering number:EN6354 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH6702 DC/DC Converter Applications Package Dimensions unit:mm 2153A 0.15 2.9 5 4 0.6 6 0.2 [CPH6702] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · The CPH6702 consists of two chips which are equivalent to the CPH3114 and the SBS006, respectively. · Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height 0.9mm). 1.6 Features 0.4 Specifications 1 : Emitter 2 : Base 3 : Anode 4 : Common (Collector, Cathode) 5 : Common (Collector, Cathode) 6 : Common (Collector, Cathode) SANYO : CPH6 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current VCBO VCEO –15 V –15 V VEBO IC –5 V –1.5 A Collector Current (Pulse) ICP –3 Base Current –300 Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (600mm2×0.8mm) A mA 1.3 W 150 ˚C –55 to +125 ˚C VRRM VRSM 30 V 30 V IO 0.7 A [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 10 A –55 to +125 ˚C –55 to +125 ˚C Marking : PB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2671 No.6354–1/4 CPH6702 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage VCB=–12V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–100mA VCE=–2V, IC=–300mA 200 Turn-ON Time Storage Time Fall Time µA –0.1 µA 560 350 VCB=–10V, f=1MHz MHz 17 IC=–750mA, IB=–15mA VBE(sat) IC=–750mA, IB=–15mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO ton –0.1 IC=–10µA, IC=0 pF –120 –180 mV –0.85 –1.2 V –15 V –15 V –5 V See specified Test Circuit. 50 ns tstg See specified Test Circuit. 87 ns tf See specified Test Circuit. 15 ns [SBD] Reverse Voltage VR VF1 IR=0.5mA IF=0.3A VF2 30 V 0.35 0.40 V IF=0.5A 0.42 0.47 V VF3 IF=0.7A 0.5 0.55 V IR VR=10V 200 µA Interterminal Capacitance C Reverse Recovery Time trr VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Forward Voltage Reverse Current 20 pF 10 ns Electrical Connection 4 5 6 1 2 3 (Top view) Switching Time Test Circuit [TR] [SBD] Duty≤10% IB2 IB1 10mA OUTPUT INPUT 50Ω 100Ω RL VR + + 220µF 470µF 10Ω 100mA 10µs RB 50Ω 100mA PW=20µs D.C.≤1% trr –5V VBE=5V VCC=–5V –20IB1= 20IB2= IC=–750mA No.6354–2/4 CPH6702 IC -- VBE --1.0 [TR] --0.9 DC Current Gain, hFE Collector Current, IC – A --0.7 Ta=75°C --0.5 --0.4 25°C --25°C --0.6 --0.3 --0.2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Collector-to-Emitter Voltage, VCE – V f T -- IC 1000 25°C 3 2 10 7 5 3 2 100 7 5 3 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 5 IT01662 Cob -- VCB [TR] f=1MHz 7 5 3 2 10 7 5 3 2 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 5 3 2 C 5° =7 Ta 5 3 °C 25 5°C --2 2 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 --100 75°C 5 25°C 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 IT01667 °C 25 ° --25 C 3 2 --10 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 IT01666 ASO [TR] ICP=--3A 10 IC=--1.5A 10 --1.0 7 5 0µ 50 ms 1m DC 100 op ms era tio n 3 2 s s 0µ s --0.1 7 5 2 3 7 Ta= 5 3 2 2 5°C 7 --10 7 --0.01 Collector Current, IC – A Ta=--25°C 7 [TR] IC / IB=50 2 5 --1.0 3 IT01664 3 [TR] 2 2 --10 5 3 3 7 7 IC / IB=50 7 5 VCE(sat) -- IC IT01665 VBE(sat) -- IC --10 3 --1000 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 7 2 Collector-to-Base Voltage, VCB – V [TR] IC / IB=20 --100 1.0 --1.0 3 IT01663 VCE(sat) -- IC --1000 --0.1 --0.01 5 100 2 --10 7 --0.01 3 [TR] 5 10 --0.01 2 IT01661 Output Capacitance, Cob – pF Gain-Bandwidth Product, f T – MHz --25°C 100 7 5 1.0 --0.01 --1.2 VCE=--2V 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Ta=75°C 3 2 --0.1 Collector-to-Emitter Saturation Voltage, VCE (sat) – V [TR] VCE=--2V 3 2 --0.8 0 hFE -- IC 1000 7 5 VCE=--2V Ta=25°C Single pulse Mounted on a ceramic board(600mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE – V 2 3 IT01668 No.6354–3/4 CPH6702 PC -- Ta 10 7 5 2 ×0 0.4 .8m m) 0.1 7 5 3 2 0.2 0 20 40 60 100 120 140 160 Ta= 100°C 1.0 7 5 3 2 75°C 50°C 0.1 7 5 3 2 0.01 25°C 0 5 10 15 20 Reverse Voltage, VR – V 0 25 30 IT01671 25 ° 0.2 0.4 0.6 0.8 Forward Voltage, VF – V [SBD] °C 125 10 7 5 3 2 0.01 IT01669 IR -- VR 100 7 5 3 2 Reverse Current, IR – mA 80 Ambient Temperature, Ta – °C Average Forward Power Dissipation, PF(AV) -- W 0 C 3 2 0°C 50 °C 0.6 10 C 0.8 cer am ic b oa rd (60 0m m 1.0 7 5 75° 1.0 on a [SBD] 3 2 5° C M ou nte d Forward Current, IF – A Collector Dissipation, PC – W 1.6 1.4 1.3 1.2 IF -- VF [TR] Ta =1 2 1.8 IT01670 PF(AV) -- IO 0.7 [SBD] ⁄Rectangular wave θ=60° 0.6 ¤Rectangular wave θ=120° ‹ ¤ › ‹Rectangular wave θ=180° 0.5 ›Sine wave θ=180° ⁄ 0.4 Rectangular wave 0.3 θ 0.2 360° Sine wave 0.1 0 0 180° 360° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average Forward Current, IO -- A 0.9 IT01672 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6354–4/4