Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Package Dimensions unit:mm 2156 [CPH5702] 2.9 0.15 0.2 4 3 0.6 5 2.8 0.05 0.6 · Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · The CPH5702 consists of two chips encapsulated in a package which are equivalent to the CPH3209 and the SB07-03C, respectively. · Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). 1.6 Features 1 2 0.4 0.9 0.7 0.2 0.95 0.4 Specifications 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO 40 V 30 V VEBO IC 5 V 3 A ICP 5 Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 600 Mounted on a ceramic board (600mm2×0.8mm) A mA 0.9 W 150 ˚C –55 to +125 ˚C VRRM VRSM 30 V 35 V IO 700 mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71299TS (KOTO) TA-1726 No.6091–1/5 CPH5702 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=20V, IE=0 VEB=4V, IC=0 DC Current Gain VCE=2V, IC=500mA Gain-Bandwidth Product hFE fT Output Capacitance Cob VCB=10V, f=1MHz IC=1.5A, IB=30mA VCE=10V, IC=500mA VCE(sat)1 Collector-to-Emitter Saturation Voltage 200 Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IE=1mA, IC=0 See specified Test Circuit. Storage Time tstg tf Turn-OFF Time µA 560 MHz 20 IC=1.5A, IB=75mA VBE(sat) IC=1.5A, IB=30mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ Collector-to-Base Breakdown Voltage µA 0.1 450 VCE(sat)2 Base-to-Emitter Saturation Voltage 0.1 pF 120 185 mV 105 155 mV 0.83 1.2 V 40 V 30 V 5 V 30 ns See specified Test Circuit. 300 ns See specified Test Circuit. 15 ns [SBD] Reverse Voltage VR Forward Voltage VF IR=300µA IF=700mA Reverse Current IR VR=15V C VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. Interterminal Capacitance Reverse Recovery Time trr Rthj-a Thermal Resistance 30 Mounted on a ceramic board (600mm2×0.8mm) V 0.55 V 80 µA 28 pF 10 151 ns ˚C/W Electrical Connection (Top view) 5 3 4 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode 1 2 Switching Time Test Circuit (TR) I B1 PW=20µs D.C.≤1% OUTPUT I B2 I NPUT RB 50Ω RL VR + + 100µF 470µF VBE=–5V VCC=12V 20IB1=–20IB2=IC=500mA (For PNP, the polarity is reversed.) (SBD) 100mA Duty≤10% 50Ω 100Ω –5V 10Ω 10mA 100mA 10µs trr No.6091–2/5 CPH5702 I C - VCE 6mA A [TR] 2.8 Collector Current, IC – A 1.6 4mA 1.2 40mA 30mA 20mA 0.8 I C - VBE VCE=2V 2mA 0.4 2.4 25°C 8m 3.2 2.0 1.6 1.2 -25°C A m 10 [TR] Ta=75°C 50mA Collector Current, IC – A 2.0 0.8 0.4 IB=0 0 0 200 400 600 800 0 1000 0 0.2 0.4 Collector-to-Emitter Voltage, VCE – mV hFE - I C [TR] VCE=2V DC Current Gain, hFE 7 5 Ta=75°C 25°C 3 -25°C 2 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 2 5 7 2 10 2 100 7 5 3 2 7 10 2 3 VCE(sat) - I C 3 5 7 5 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 3 5 7 1000 2 3 2 [TR] IC / IB=20 -25 °C = Ta 0.1 7 5 °C 75 25 °C 3 2 0.01 7 5 3 2 0.001 0.01 2 3 5 7 0.1 2 3 5 7 1.0 3 5 7 VBE(sat) - I C 3 Base-to-Emitter Saturation Voltage, VBE(sat) – V °C 25 25 °C Ta =°C 0.1 75 Collector-to-Emitter Saturation Voltage, VCE(sat) – V 2 2 2 3 5 7 Collector Current, IC – A 5 3 7 100 3 2 [TR] IC / IB=50 7 5 VCE(sat) - I C Collector-to-Base Voltage, VCB – V 1.0 [TR] VCE =10V 3 1.0 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) – V Output Capacitance, Cob – pF [TR] f= 1MHz 7 3 1.4 5 10 5 7 10 100 2 1.2 Collector Current, IC – mA Cob - VCB 10 1.0 1.0 7 Collector Current, IC – A 2 0.8 fT - IC 1000 Gain-Bandwidth Product, f T – MHz 1000 0.6 Base-to-Emitter Voltage, VBE – V [TR] IC / IB=50 2 Ta=-25°C 1.0 25°C 75°C 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC – A No.6091–3/5 CPH5702 A S O 3 2 1m 10 DC 0m s era tio n Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board(600mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 P C - Ta 1.0 5 0.6 0.1 -25°C 25°C 125 3 0 75°C °C 0.1 7 5 0.01 7 5 0.2 0.3 0.4 0.5 .8 0.6 0 20 40 [SBD] 7 5 3 2 10 7 5 3 5 7 10 Reverse Voltage, VR – V 80 100 120 140 I R - VR 160 [SBD] Ta=125°C 100°C 100 7 5 3 2 75°C 50°C 10 7 5 3 2 25°C 1.0 7 5 3 2 0 5 10 15 20 25 30 35 2 3 5 IS - t [SBD] Current waveform 50Hz sine wave 7 Surge Forward Current, IS (Peak) – A Interterminal Capacitance, C – pF 100 2 m Reverse Voltage, VR – V C - VR 1.0 60 1000 7 5 3 2 0.1 7 5 0.7 f=1MHz 3 7 m ) Forward Voltage, IF – V 2 bo ard (60 0m m2 ×0 0.2 5 3 2 Reverse Current, IR – µA 3 2 Ta= Forward Current, IF – A [SBD] 1.0 7 5 2 ce ram ic Ambient Temperature,Ta – °C I F - VF 3 on a 0.4 0 7 M ou nte d 0.8 Collector-to-Emitter Voltage, VCE – V 2 [TR] 0.9 10 op 3 2 3 2 s ms 1.0 7 5 0.1 7 5 [TR] Collector Dissipation, PC – W Collector Current,IC – A ICP IC s 0µ 10 s 0µ 50 10 7 5 6 Is 20ms 5 t 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t – s No.6091–4/5 CPH5702 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1999. Specifications and information herein are subject to change without notice. PS No.6091–5/5