Ordering number:ENN6320 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5704 DC/DC Converter Applications Package Dimensions unit:mm 2156 [CPH5704] 2.9 0.15 0.2 4 3 0.6 5 2.8 0.05 0.6 · Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · Each device incorporated in the CPH5704 is equivalent to the CPH3206 and to the SBS004, respectively. · Ultrasmall package facilitates miniaturization in end products. 1.6 Features 1 2 0.4 0.9 0.7 0.2 0.95 0.4 Specifications 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO 15 V 15 V VEBO IC 5 V 3 A ICP 5 Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 600 Mounted on a ceramic board (600mm2×0.8mm) A mA 0.9 W 150 ˚C –55 to +125 ˚C VRRM VRSM 15 V 15 V IO 1 A [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 10 A –55 to +125 ˚C –55 to +125 ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70500TS (KOTO) TA-2784 No.6320–1/5 CPH5704 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=12V, IE=0 VEB=4V, IC=0 DC Current Gain VCE=2V, IC=0.5A Gain-Bandwidth Product hFE fT VCE=2V, IC=0.5A 380 Output Capacitance Cob VCB=10V, f=1MHz IC=1.5A, IB=30mA 23 VCE(sat) Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage 200 VBE(sat) IC=1.5A, IB=30mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO ton Turn-ON Time Storage Time Fall Time IE=10µA, IC=0 0.1 µA 0.1 µA 560 MHz pF 100 150 mV 0.85 1.2 V 15 V 15 V 5 V See specified Test Circuit. 30 ns tstg tf See specified Test Circuit. 210 ns See specified Test Circuit. 11 ns VR VF1 VF2 IR=1mA IF=0.5A [SBD] Reverse Voltage Forward Voltage Reverse Current IR Interterminal Capacitance C Reverse Recovery Time trr Thermal Resistance Rthj-a 15 IF=1A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. V 0.30 0.35 0.35 0.40 V 500 µA 42 pF 15 Mounted on a ceramic board (600mm2×0.8mm) V 110 ns ˚C/W Electrical Connection A E C B C (Top view) Switching Time Test Circuit [TR] [SBD] Duty≤10% IB1 IB2 OUTPUT INPUT 10mA 50Ω 100Ω RL VR + 220µF + 10Ω 100mA 10µs 1kΩ 50Ω 100mA PW=20µs D.C.≤1% trr 470µF –5V VBE=–5V VCC=5V 20IB1= –20IB2= IC=1.5A No.6320–2/5 CPH5704 m 40 Collector Current, IC – A 4.0 25mA 4.5 20mA 4.0 3.5 15mA 3.0 2.5 10mA 2.0 1.5 5mA 1.0 IB=0 1mA 2mA 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE – V IC -- VBE 3.0 20mA 15mA 3.5 3.0 10mA 2.5 2.0 5mA 1.5 1.0 IB=0 0 1.0 0.5 1mA 2mA 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Collector-to-Emitter Voltage, VCE – V IT00842 [TR] [TR] VCE=2V Ta=75°C 7 5.0 IT00843 hFE -- IC 1000 VCE=2V 5 DC Current Gain, hFE 2.5 2.0 0.5 0.2 0.4 0.6 0.8 5 2 3 5 [TR] 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 Cob -- VCB 100 5 IT00845 [TR] VCE=2V f=1MHz 7 Output Capacitance, Cob – pF 5 3 2 100 7 5 3 2 5 3 2 10 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A 3 5 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 100 °C 3 C 75° Ta= °C --25 2 10 7 5 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A V ( ) I 2 3 7 2 10 5 IT00848 3 IT00847 [TR] IC / IB=50 7 2 25 5 VCE(sat) -- IC 1000 3 7 5 3 Collector-to-Base Voltage, VCB – V [TR] IC / IB=20 7 5 2 1.0 IT00846 VCE(sat) -- IC 1000 3 0.01 7 IT00844 f T -- IC 7 10 0.01 100 10 0.01 1.0 Base-to-Emitter Voltage, VBE – V 1000 25°C 2 2 0 0 --25°C 3 3 --25° 1.0 C 1.5 Ta=75 °C 25°C Collector Current, IC – A 25mA 0 0 Gain-Bandwidth Product, f T – MHz [TR] 0.5 0 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV IC -- VCE 5.0 Collector Current, IC – A A A 60m 4.5 [TR] 40mA IC -- VCE 5.0 5 3 2 25 100 7 5 °C C 75° Ta= °C --25 3 2 10 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC – A IT00849 ASO No.6320–3/5 CPH5704 VBE(sat) -- IC 10 [TR] ICP=5A 7 5 IC=3A 5 Collector Current, IC – A 3 3 2 25°C 1.0 Ta= --25°C 7 75°C 5 3 1.0 7 5 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 tio n Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) 2 [TR] 3 5 7 2 1.0 3 5 7 2 10 Collector-to-Emitter Voltage, VCE – V IT00851 IF -- VF [SBD] 10 7 5 0.2 C 5° 12 Ta = 0.1 7 5 C 0.3 3 2 50° 3 2 C 25° 0.4 1.0 7 5 0 °C 0.5 ce ram ic bo ard (6 00 mm 2 ×0 .8 m m ) 10 0.6 C 0.7 3 2 75° M ou nte do na 0.8 Forward Current, IF – A Collector Dissipation, PC – W s 0.1 0.1 0.01 20 40 60 80 100 120 Ambient Temperature,Ta – °C IR -- VR 140 160 [SBD] Ta=125°C 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.01 0 5 0 10 Reverse Voltage, VR – V 0.1 IT00852 15 IT00854 Average Forward Power Dissipation, PF(AV) -- W 0 100 7 5 3 2 Reverse Current, IR – mA 0m s op 2 0.9 0 10 era IT00850 PC -- Ta 1.0 DC 3 3 2 3 0µ s 7 5 2 50 1m 2 2 0.1 0.01 [TR] s m 10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 7 ASO 10 IC / IB=50 0.2 0.3 0.4 0.5 Forward Voltage, VF – V IT00853 PF(AV) -- IO [SBD] 0.8 ⁄Rectangular wave θ=60° 0.7 ¤Rectangular wave θ=120° ‹Rectangular wave θ=180° 0.6 ›Sine wave θ=180° › 0.5 ⁄ ‹ ¤ 0.4 0.3 Rectangular wave 0.2 θ 360° Sine wave 0.1 180° 360° 0 0 0.2 0.4 0.6 0.8 1.0 Average Forward Current, IO -- A 1.2 1.4 IT00855 No.6320–4/5 CPH5704 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6320–5/5