SANYO CPH5704

Ordering number:ENN6320
TR : NPN Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
CPH5704
DC/DC Converter Applications
Package Dimensions
unit:mm
2156
[CPH5704]
2.9
0.15
0.2
4
3
0.6
5
2.8
0.05
0.6
· Composite type with an NPN transistor and a
Schottky barrier diode contained in one package
facilitating high-density mounting.
· Each device incorporated in the CPH5704 is equivalent to the CPH3206 and to the SBS004, respectively.
· Ultrasmall package facilitates miniaturization in end
products.
1.6
Features
1
2
0.4
0.9
0.7
0.2
0.95
0.4
Specifications
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
15
V
15
V
VEBO
IC
5
V
3
A
ICP
5
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
600
Mounted on a ceramic board (600mm2×0.8mm)
A
mA
0.9
W
150
˚C
–55 to +125
˚C
VRRM
VRSM
15
V
15
V
IO
1
A
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
10
A
–55 to +125
˚C
–55 to +125
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70500TS (KOTO) TA-2784 No.6320–1/5
CPH5704
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
VCB=12V, IE=0
VEB=4V, IC=0
DC Current Gain
VCE=2V, IC=0.5A
Gain-Bandwidth Product
hFE
fT
VCE=2V, IC=0.5A
380
Output Capacitance
Cob
VCB=10V, f=1MHz
IC=1.5A, IB=30mA
23
VCE(sat)
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
200
VBE(sat) IC=1.5A, IB=30mA
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=∞
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)EBO
ton
Turn-ON Time
Storage Time
Fall Time
IE=10µA, IC=0
0.1
µA
0.1
µA
560
MHz
pF
100
150
mV
0.85
1.2
V
15
V
15
V
5
V
See specified Test Circuit.
30
ns
tstg
tf
See specified Test Circuit.
210
ns
See specified Test Circuit.
11
ns
VR
VF1
VF2
IR=1mA
IF=0.5A
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
Thermal Resistance
Rthj-a
15
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
V
0.30
0.35
0.35
0.40
V
500
µA
42
pF
15
Mounted on a ceramic board (600mm2×0.8mm)
V
110
ns
˚C/W
Electrical Connection
A
E
C
B
C
(Top view)
Switching Time Test Circuit
[TR]
[SBD]
Duty≤10%
IB1
IB2
OUTPUT
INPUT
10mA
50Ω
100Ω
RL
VR
+
220µF
+
10Ω
100mA
10µs
1kΩ
50Ω
100mA
PW=20µs
D.C.≤1%
trr
470µF
–5V
VBE=–5V
VCC=5V
20IB1= –20IB2= IC=1.5A
No.6320–2/5
CPH5704
m
40
Collector Current, IC – A
4.0
25mA
4.5
20mA
4.0
3.5
15mA
3.0
2.5
10mA
2.0
1.5
5mA
1.0
IB=0
1mA
2mA
0.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Collector-to-Emitter Voltage, VCE – V
IC -- VBE
3.0
20mA
15mA
3.5
3.0
10mA
2.5
2.0
5mA
1.5
1.0
IB=0
0
1.0
0.5
1mA
2mA
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Collector-to-Emitter Voltage, VCE – V
IT00842
[TR]
[TR]
VCE=2V
Ta=75°C
7
5.0
IT00843
hFE -- IC
1000
VCE=2V
5
DC Current Gain, hFE
2.5
2.0
0.5
0.2
0.4
0.6
0.8
5
2
3
5
[TR]
7 0.1
2
3
5
7 1.0
2
Collector Current, IC – A
3
Cob -- VCB
100
5
IT00845
[TR]
VCE=2V
f=1MHz
7
Output Capacitance, Cob – pF
5
3
2
100
7
5
3
2
5
3
2
10
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC – A
3
5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
100
°C
3
C
75°
Ta=
°C
--25
2
10
7
5
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC – A
V
(
)
I
2
3
7
2
10
5
IT00848
3
IT00847
[TR]
IC / IB=50
7
2
25
5
VCE(sat) -- IC
1000
3
7
5
3
Collector-to-Base Voltage, VCB – V
[TR]
IC / IB=20
7
5
2
1.0
IT00846
VCE(sat) -- IC
1000
3
0.01
7
IT00844
f T -- IC
7
10
0.01
100
10
0.01
1.0
Base-to-Emitter Voltage, VBE – V
1000
25°C
2
2
0
0
--25°C
3
3
--25°
1.0
C
1.5
Ta=75
°C
25°C
Collector Current, IC – A
25mA
0
0
Gain-Bandwidth Product, f T – MHz
[TR]
0.5
0
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
IC -- VCE
5.0
Collector Current, IC – A
A
A
60m
4.5
[TR]
40mA
IC -- VCE
5.0
5
3
2
25
100
7
5
°C
C
75°
Ta=
°C
--25
3
2
10
7
5
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC – A
IT00849
ASO
No.6320–3/5
CPH5704
VBE(sat) -- IC
10
[TR]
ICP=5A
7
5
IC=3A
5
Collector Current, IC – A
3
3
2
25°C
1.0
Ta= --25°C
7
75°C
5
3
1.0
7
5
5
7 0.1
2
3
5
7 1.0
Collector Current, IC – A
2
3
5
tio
n
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2×0.8mm)
2
[TR]
3
5
7
2
1.0
3
5
7
2
10
Collector-to-Emitter Voltage, VCE – V
IT00851
IF -- VF
[SBD]
10
7
5
0.2
C
5°
12
Ta
=
0.1
7
5
C
0.3
3
2
50°
3
2
C
25°
0.4
1.0
7
5
0 °C
0.5
ce
ram
ic
bo
ard
(6
00
mm
2
×0
.8
m
m
)
10
0.6
C
0.7
3
2
75°
M
ou
nte
do
na
0.8
Forward Current, IF – A
Collector Dissipation, PC – W
s
0.1
0.1
0.01
20
40
60
80
100
120
Ambient Temperature,Ta – °C
IR -- VR
140
160
[SBD]
Ta=125°C
100°C
10
7
5
3
2
75°C
1.0
7
5
3
2
50°C
25°C
0.1
7
5
3
2
0.01
0
5
0
10
Reverse Voltage, VR – V
0.1
IT00852
15
IT00854
Average Forward Power Dissipation, PF(AV) -- W
0
100
7
5
3
2
Reverse Current, IR – mA
0m
s
op
2
0.9
0
10
era
IT00850
PC -- Ta
1.0
DC
3
3
2
3
0µ
s
7
5
2
50
1m
2
2
0.1
0.01
[TR]
s
m
10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
7
ASO
10
IC / IB=50
0.2
0.3
0.4
0.5
Forward Voltage, VF – V
IT00853
PF(AV) -- IO
[SBD]
0.8
⁄Rectangular wave θ=60°
0.7 ¤Rectangular wave θ=120°
‹Rectangular wave θ=180°
0.6 ›Sine wave θ=180°
›
0.5
⁄
‹
¤
0.4
0.3
Rectangular wave
0.2
θ
360°
Sine wave
0.1
180° 360°
0
0
0.2
0.4
0.6
0.8
1.0
Average Forward Current, IO -- A
1.2
1.4
IT00855
No.6320–4/5
CPH5704
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject to
change without notice.
PS No.6320–5/5