SANYO MCH5702

Ordering number : ENN7076
MCH5702
TR : NPN Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
MCH5702
DC / DC Converter Applications
•
Composite type with an NPN transistor and a Schottky unit : mm
barrier diode contained in one package facilitating
2200
high-density mounting.
The MCH5702 consists of two chips which are
equivalent to the MCH6201 and the SBS006,
respectively.
Ultrasmall package (0.85mm high when mounted)
facilitates miniaturization in end products.
[MCH5702]
0.15
0.3
5
4
1.6
•
2.1
0.25
•
Package Dimensions
0.25
3
2
0.65
1
0.07
Features
2.0
4
0.85
5
Specifications
1
2
3
1 : Base
2 : Emitter
3 : Anode
4 : Cathode
5 : Collector
SANYO : MCPH5
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
15
V
Collector-to-Emitter Voltage
VCEO
15
V
Emitter-to-Base Voltage
VEBO
5
V
IC
1.5
A
Base Current
ICP
IB
300
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector Current
Collector Current (Pulse)
3
Mounted on a ceramic board (600mm2✕0.8mm)
A
mA
0.7
W
150
°C
--55 to +125
°C
VRRM
VRSM
30
V
30
V
IO
0.7
A
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Recified Current
Surge Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1cycle
10
A
--55 to +125
°C
--55 to +125
°C
Marking : PC
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM No.7076-1/5
N1501 TS IM TA-3391
MCH5702
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain
Gain-Bandwidth Product
fT
Output Capacitance
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
ton
tstg
tf
Storage Time
Fall Time
200
0.1
µA
0.1
µA
560
450
VCB=10V, f=1MHz
VCE(sat)
Base-to-Emitter Saturation Voltage
VCE=2V, IC=100mA
VCE=2V, IC=300mA
Cob
Collector-to-Emitter Saturation Voltage
VCB=12V, IE=0
VEB=4V, IC=0
MHz
9
IC=750mA, IB=15mA
IC=750mA, IB=15mA
IC=10µA, IE=0
IC=1mA, RBE=∞
pF
130
200
0.85
1.2
mV
V
15
IE=10µA, IC=0
See specified Test Circuit.
V
15
V
5
V
40
ns
See specified Test Circuit.
180
ns
See specified Test Circuit.
20
ns
[SBD]
Reverse Voltage
Forward Voltage
VR
VF 1
IR=0.5mA
IF=0.3A
VF 2
VF 3
IF=0.5A
IF=0.7A
Reverse Current
30
V
0.35
Interterminal Capacitance
IR
C
VR=10V
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit
0.40
V
0.42
0.47
V
0.5
0.55
V
200
µA
20
pF
10
ns
Electrical Connection
5
4
(Top view)
3
Switching Time Test Circuit
trr Test Circuit
[TR]
[SBD]
IB2
PW=20µs
D.C.≤1%
Duty≤10%
VR
100mA
INPUT
OUTPUT
IB1
RB
50Ω
+
220µF
VBE= --5V
50Ω
RL
+
470µF
VCC=5V
100Ω
10µs
10Ω
10mA
2
100mA
1
--5V
trr
IC=20IB1= --20IB2=750mA
No.7076-2/5
MCH5702
IC -- VCE
2.0
4mA
0.8
2mA
0.6
0.4
0.6
0.5
0.4
0.3
0.2
0.1
IB=0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Collector-to-Emitter Voltage, VCE -- V
VCE(sat) -- IC
1000
[TR]
2
C
5°
7
2
5
°C
75
5°C
--2
3
Ta=
2
10
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
2
2
3
5
7
1.0
Collector Current, IC -- A
3
5
7 1.0
25°C
2
100
7
5
3
2
3
[TR]
Ta=75°C
--25°C
5
2
3
5
7
2
0.1
3
5
7
2
1.0
3
IT01696
Cob -- VCB
100
[TR]
f=1MHz
7
Output Capacitance, Cob -- pF
3
2
IT01704
Collector Current, IC -- A
VCE=2V
5
10
0.01
2
7
10
0.01
3
[TR]
7
7 0.1
VCE=2V
IT01706
f T -- IC
1000
2
5
100
2
0.1
3
2
3
7
2
hFE -- IC
2
5
°C
--25
10
3
3
Ta=
1000
DC Current Gain, hFE
25°C
75°C
2
°C
5
3
0.1
0.01
C
7
3
5
75
25°
100
5
7
[TR]
IC / IB=50
7
2
1.2
IT01694
3
5
Ta= --25°C
1.0
Collector Current, IC -- A
IC / IB=50
1.0
0.8
5
7
5
0.01
3
[TR]
7
0.6
VCE(sat) -- IC
1000
IT01702
VBE(sat) -- IC
10
2
0.4
7
3
100
0.2
Base-to-Emitter Voltage, VBE -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
0
IT01692
5
7
5
0.01
0
1.0
IC / IB=20
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
25°C
--25°C
1.2
0.7
Ta=75°C
30
mA
Collector Current, IC -- A
A
6mA
1.0
0.8
0.2
Gain-Brandwidth Product, f T -- MHz
[TR]
0.9
10mA
8mA
40
mA
Collector Current, IC -- A
1.6
1.4
IC -- VBE
1.0
VCE=2V
20
50m
1.8
[TR]
mA
5
3
2
10
7
5
3
2
1.0
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
IT01698
1.0
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
3
IT01700
No.7076-3/5
MCH5702
3
Collector Current, IC -- A
[TR]
IC=1.5A
1.0
DC
7
5
10
op
0m
s
era
n
2
0.1
7
5
2
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm2✕0.8mm)
0.01
0.1
2
3
5
7
1.0
2
3
5
7
C 5
0°C 25°C
75°
2
0.01
0
0.2
0.4
0.6
0.8
Average Forward Power Dissipation, PF(AV) -- W
Forward Voltage, VF -- V
0.7
0.6
0.5
IT01670
PF(AV) -- IO
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
(1)
Rectangular wave
am
bo
ar
d(
60
0m
0.3
m2
✕
0.
0.2
8m
m
)
0
Reverse Current, IR -- mA
0°
C
3
ac
ic
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT03622
IR -- VR
[SBD]
100
7
5
3
2
10
25°
C
Ta=
1
Forward Current, IF -- A
5
on
0.4
[SBD]
5
7
ed
er
IT03621
7
0.1
nt
0.5
3
1.0
3
ou
0
2
10
IF -- VF
2
M
0.6
0.1
Collector-to-Emitter Voltage, VCE -- V
2
[TR]
0.7
tio
3
3
PC -- Ta
0.8
100µs
s
0µ
50
s ms
1m 10
2
A S O
ICP=3A
Collector Dissipation, PC -- W
5
25°C
10
7
5
3
2
1
Ta=
100°C
1.0
7
5
3
2
75°C
50°C
0.1
7
5
3
2
0.01
25°C
0
5
10
15
20
Reverse Voltage, VR -- V
25
30
IT01671
[SBD]
(2) (4)
(3)
0.4
θ
0.3
360°
0.2
Sine wave
0.1
180°
0
0
360°
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Average Forward Current, IO -- A
0.8
0.9
IT01672
No.7076-4/5
MCH5702
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS No.7076-5/5