Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating 2200 high-density mounting. The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products. [MCH5702] 0.15 0.3 5 4 1.6 • 2.1 0.25 • Package Dimensions 0.25 3 2 0.65 1 0.07 Features 2.0 4 0.85 5 Specifications 1 2 3 1 : Base 2 : Emitter 3 : Anode 4 : Cathode 5 : Collector SANYO : MCPH5 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO 15 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V IC 1.5 A Base Current ICP IB 300 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) 3 Mounted on a ceramic board (600mm2✕0.8mm) A mA 0.7 W 150 °C --55 to +125 °C VRRM VRSM 30 V 30 V IO 0.7 A [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Recified Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1cycle 10 A --55 to +125 °C --55 to +125 °C Marking : PC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM No.7076-1/5 N1501 TS IM TA-3391 MCH5702 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product fT Output Capacitance Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg tf Storage Time Fall Time 200 0.1 µA 0.1 µA 560 450 VCB=10V, f=1MHz VCE(sat) Base-to-Emitter Saturation Voltage VCE=2V, IC=100mA VCE=2V, IC=300mA Cob Collector-to-Emitter Saturation Voltage VCB=12V, IE=0 VEB=4V, IC=0 MHz 9 IC=750mA, IB=15mA IC=750mA, IB=15mA IC=10µA, IE=0 IC=1mA, RBE=∞ pF 130 200 0.85 1.2 mV V 15 IE=10µA, IC=0 See specified Test Circuit. V 15 V 5 V 40 ns See specified Test Circuit. 180 ns See specified Test Circuit. 20 ns [SBD] Reverse Voltage Forward Voltage VR VF 1 IR=0.5mA IF=0.3A VF 2 VF 3 IF=0.5A IF=0.7A Reverse Current 30 V 0.35 Interterminal Capacitance IR C VR=10V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit 0.40 V 0.42 0.47 V 0.5 0.55 V 200 µA 20 pF 10 ns Electrical Connection 5 4 (Top view) 3 Switching Time Test Circuit trr Test Circuit [TR] [SBD] IB2 PW=20µs D.C.≤1% Duty≤10% VR 100mA INPUT OUTPUT IB1 RB 50Ω + 220µF VBE= --5V 50Ω RL + 470µF VCC=5V 100Ω 10µs 10Ω 10mA 2 100mA 1 --5V trr IC=20IB1= --20IB2=750mA No.7076-2/5 MCH5702 IC -- VCE 2.0 4mA 0.8 2mA 0.6 0.4 0.6 0.5 0.4 0.3 0.2 0.1 IB=0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V VCE(sat) -- IC 1000 [TR] 2 C 5° 7 2 5 °C 75 5°C --2 3 Ta= 2 10 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 2 2 3 5 7 1.0 Collector Current, IC -- A 3 5 7 1.0 25°C 2 100 7 5 3 2 3 [TR] Ta=75°C --25°C 5 2 3 5 7 2 0.1 3 5 7 2 1.0 3 IT01696 Cob -- VCB 100 [TR] f=1MHz 7 Output Capacitance, Cob -- pF 3 2 IT01704 Collector Current, IC -- A VCE=2V 5 10 0.01 2 7 10 0.01 3 [TR] 7 7 0.1 VCE=2V IT01706 f T -- IC 1000 2 5 100 2 0.1 3 2 3 7 2 hFE -- IC 2 5 °C --25 10 3 3 Ta= 1000 DC Current Gain, hFE 25°C 75°C 2 °C 5 3 0.1 0.01 C 7 3 5 75 25° 100 5 7 [TR] IC / IB=50 7 2 1.2 IT01694 3 5 Ta= --25°C 1.0 Collector Current, IC -- A IC / IB=50 1.0 0.8 5 7 5 0.01 3 [TR] 7 0.6 VCE(sat) -- IC 1000 IT01702 VBE(sat) -- IC 10 2 0.4 7 3 100 0.2 Base-to-Emitter Voltage, VBE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 0 IT01692 5 7 5 0.01 0 1.0 IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 25°C --25°C 1.2 0.7 Ta=75°C 30 mA Collector Current, IC -- A A 6mA 1.0 0.8 0.2 Gain-Brandwidth Product, f T -- MHz [TR] 0.9 10mA 8mA 40 mA Collector Current, IC -- A 1.6 1.4 IC -- VBE 1.0 VCE=2V 20 50m 1.8 [TR] mA 5 3 2 10 7 5 3 2 1.0 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT01698 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 IT01700 No.7076-3/5 MCH5702 3 Collector Current, IC -- A [TR] IC=1.5A 1.0 DC 7 5 10 op 0m s era n 2 0.1 7 5 2 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 C 5 0°C 25°C 75° 2 0.01 0 0.2 0.4 0.6 0.8 Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V 0.7 0.6 0.5 IT01670 PF(AV) -- IO (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° (1) Rectangular wave am bo ar d( 60 0m 0.3 m2 ✕ 0. 0.2 8m m ) 0 Reverse Current, IR -- mA 0° C 3 ac ic 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT03622 IR -- VR [SBD] 100 7 5 3 2 10 25° C Ta= 1 Forward Current, IF -- A 5 on 0.4 [SBD] 5 7 ed er IT03621 7 0.1 nt 0.5 3 1.0 3 ou 0 2 10 IF -- VF 2 M 0.6 0.1 Collector-to-Emitter Voltage, VCE -- V 2 [TR] 0.7 tio 3 3 PC -- Ta 0.8 100µs s 0µ 50 s ms 1m 10 2 A S O ICP=3A Collector Dissipation, PC -- W 5 25°C 10 7 5 3 2 1 Ta= 100°C 1.0 7 5 3 2 75°C 50°C 0.1 7 5 3 2 0.01 25°C 0 5 10 15 20 Reverse Voltage, VR -- V 25 30 IT01671 [SBD] (2) (4) (3) 0.4 θ 0.3 360° 0.2 Sine wave 0.1 180° 0 0 360° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Average Forward Current, IO -- A 0.8 0.9 IT01672 No.7076-4/5 MCH5702 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7076-5/5