MCH6732 Ordering number : ENN7758 MCH6732 NPN Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC / DC Converter Applications Features • • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V IC 1 A Collector Current Collector Current (Pulse) ICP PC Collector Dissipation Mounted on a ceramic board (600mm2✕0.8mm) 2 A 0.7 W 150 °C --55 to +125 °C VRRM VRSM 15 V 15 V IO 0.5 A Junction Temperature Tj Storage Temperature Tstg [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current 2 A Junction Temperature IFSM Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : PG Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63004 TS IM TA-100823 No.7758-1/5 MCH6732 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [TR] Collector Cutoff Current ICBO VCB=12V, IE=0 0.1 µA Emitter Cutoff Current IEBO hFE VEB=4V, IC=0 0.1 µA DC Current Gain fT VCE=2V, IC=50mA VCE=2V, IC=50mA Cob VCB=10V, f=1MHz Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time ton tstg tf Fall Time 300 800 440 MHz 4 IC=400mA, IB=20mA IC=400mA, IB=20mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. pF 140 280 0.9 1.2 mV V 20 V 15 V 5 V 30 ns See specified Test Circuit. 165 ns See specified Test Circuit. 25 ns [Di] Reverse Voltage VR Forward Voltage VF IR=0.5mA IF=0.5A Reverse Current Interterminal Capacitance IR C VR=6V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 3 2 0.65 1 6 5 4 1 2 3 0.85 (Bottom view) (Top view) 6 5 4 1 : Emitter 2 : Base 3 : Cathode 4 : Anode 5 : NC 6 : Collector 1 : Emitter 2 : Base 3 : Cathode 4 : Anode 5 : NC 6 : Collector 1 2 3 Top view trr Specified Circuit [TR] [Di] INPUT IB1 IB2 50Ω RB 100Ω RL 10µs 50Ω + 220µF VBE= --5V ns Duty≤10% OUTPUT VR pF SANYO : MCPH6 Switching Time Test Circuit PW=20µs D.C.≤1% µA 10 0.15 0.07 2.0 90 + 470µF 10Ω 10mA 6 V 13 1.6 0.25 2.1 5 0.45 Electrical Connection 0.3 4 V 0.40 100mA 100mA 0.25 Package Dimensions unit : mm 2232 12 --5V trr VCC=5V IC=20IB1= --20IB2=400mA No.7758-2/5 MCH6732 IC -- VCE 700 5.0mA 1000 3.0mA 600 2.0mA 1.5mA 500 400 1.0mA 300 0.6mA 200 [TR] VCE=2V 800 600 °C 25°C --25°C 800 A .0m 10 IC -- VBE 1200 Ta=7 5 Collector Current, IC -- mA 900 [TR] A 7.0m Collector Current, IC -- mA 2 30.0 0.0mA mA 1000 400 200 0.3mA 100 0 0 IB=0 100 200 300 400 500 600 700 Collector-to-Emitter Voltage, VCE -- mV 0 1000 [TR] 0.8 1.0 VCE(sat) -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV DC Current Gain, hFE 0.6 25°C --25°C 3 2 1.2 IT05038 [TR] IC / IB=20 7 Ta=75°C 5 0.4 Base-to-Emitter Voltage, VBE -- V VCE=2V 7 0.2 IT05037 hFE -- IC 1000 0 900 800 5 3 2 100 C 5° =7 5°C a T --2 7 5 3 2 25 °C 10 7 5 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 10 2 3 5 7 100 2 [TR] VBE(sat) -- IC 3 3 2 100 C 5° 7 = Ta 5 3 C 5° --2 °C 25 2 10 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA [TR] 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 1.0 5 7 1000 2 3 5 7 10 2 3 5 7 100 2 [TR] fT -- IC 1000 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF VCE=2V 7 5 3 2 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 2 5 7 1000 IT05044 [TR] f=1MHz 1.0 1.0 3 Collector Current, IC -- mA IT05043 Cob -- VCB 10 5 7 1000 IT05042 IC / IB=20 5 7 3 Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 IC / IB=50 7 1.0 2 IT05039 VCE(sat) -- IC 1000 3 1.0 5 7 1000 3 IT05041 7 5 3 2 100 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05040 No.7758-3/5 MCH6732 Ron -- IB 10 f=1MHz 7 2 OUT 1kΩ Collector Current, IC -- A 1.0 7 5 3 7 5 10 DC 3 2 3 5 7 2 1.0 3 5 tio n 0.1 7 5 10 IT06664 Base Current, IB -- mA PC -- Ta Collector Dissipation, PC -- mW 800 700 0.01 0.1 7 s op 2 2 0.1 0.1 0m era 3 2 s ms IB 1m IC=1A 1.0 2 10µs 10 3 [TR] ICP=2A s 0µ s 10 00µ 5 ON--Resistance, Ron -- Ω 3 IN 5 ASO [TR] 1kΩ Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 2 3 5 7 2 1.0 3 5 7 2 10 3 Collector-to-Emitter Voltage, VCE -- V IT07193 IR -- VR [SBD] [TR] M ou nt 600 ed 500 on ac er am ic 400 bo ar d (6 00 300 m m2 ✕ 200 0. 8m m ) 100 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT05047 IF -- VF [SBD] 1.0 7 Reverse Current, IR -- µA 3 2 0.1 7 5 Ta= 125 °C 100 °C 75° C 50°C 25°C Forward Current, IF -- A 5 3 2 10000 7 5 3 2 100°C 1000 7 5 3 2 75°C 50°C 100 7 5 3 2 25°C 10 7 5 3 2 1.0 0.01 0 0.1 0.2 0.3 Rectangular wave (1) [SBD] Interterminal Capacitance, C -- pF 360° Sine wave 0.5 180° 360° 0.4 0.3 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0.1 0 0 0.2 0.4 0.6 C -- VR 7 0.8 1.0 Average Forward Current, IO -- A 1.2 15 IT06887 [SBD] f=1MHz θ 0.6 10 (2) (4) (3) 0.8 0.7 5 Reverse Voltage, VR -- V IT06886 PF(AV) -- IO 0.9 0 0.5 0.4 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W Ta=125°C 1.4 IT06888 5 3 2 10 7 5 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT06889 No.7758-4/5 MCH6732 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7758-5/5