SANYO CPH6701

Ordering number:ENN6007A
PNP Epitaxial Planar Silicon Transistor
Schottky Barrier Diode
CPH6701
DC/DC Converter Applications
Package Dimensions
unit:mm
2153
0.15
2.9
5
4
0.6
6
0.2
[CPH6701]
2.8
0.05
2
3
0.95
0.7
0.9
1
0.2
0.6
· Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
· The CPH6701 is formed with two chips, one being
equivalent to the CPH3106 and the other the
SBS001, encapsulated in one package.
· Ultrasmall package facilitates miniaturization in end
products (mounting height : 0.9mm).
1.6
Features
0.4
Specifications
1 : Emitter
2 : Base
3 : Anode
4 : Common (Collector, Cathode)
5 : Common (Collector, Cathode)
6 : Common (Collector, Cathode)
SANYO : CPH6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
–15
V
–12
V
VEBO
IC
–5
V
–3
A
ICP
–5
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
–600
Mounted on a ceramic board (600mm2×0.8mm)
A
mA
1.3
W
150
˚C
–55 to +125
˚C
VRRM
VRSM
11
V
15
V
IO
500
mA
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
5
A
–55 to +125
˚C
–55 to +125
˚C
Marking : PA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2852/61899TS (KOTO) TA-1524 No.6007–1/5
CPH6701
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
VCB=–12V, IE=0
VEB=–4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–3A
fT
VCE=–2V, IC=–0.5A
280
Cob
VCB=–10V, f=1MHz
36
VCE(sat)
VBE(sat)
IC=–1.5A, IB=–30mA
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage
IC=–1.5A, IB=–30mA
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Collector-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
200
–0.1
µA
–0.1
µA
560
70
MHz
pF
–110
–165
mV
–0.85
–1.2
V
–15
V
–12
V
IC=–10µA, IC=0
–5
V
ton
tstg
See specified Test Circuit.
30
ns
See specified Test Circuit.
90
ns
tf
See specified Test Circuit.
10
ns
[Di]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VR
VF
IR=400µA
IF=500mA
IR
C
VR=6V
trr
Rthj-a
Thermal Resistance
11
V
0.4
VR=10V, f=1MHz
0.45
V
200
µA
50
IF=IR=100mA, See specified Test Circuit.
pF
10
Mounted on a ceramic board (600mm2×0.8mm)
96
ns
˚C/W
Electrical Connection
6
5
4
1
2
3
A11501
Switching Time Test Circuit
(TR)
(Di)
IB1
OUTPUT
RB
220µF
50Ω
+
+
50Ω
10mA
10µs
RL
VR
Duty≤10%
100mA
IB2
INPUT
100Ω
470µF
10Ω
100mA
PW=20µs
D.C.≤1%
trr
VBE=5V
VCC=–5V
–20IB1=20IB2=IC=–1.5A
–5V
A11503
A11502
No.6007–2/5
CPH6701
I C - VCE
A
-2.0
6m
–1
-180
–8mA
-1.2
–6mA
-1.0
–4mA
-0.8
-0.6
–2mA
-160
-80
–0.3mA
-60
–0.2mA
-20
IB=0
-0.6
-0.8
0
-1.0
–0.4mA
-100
-40
-0.4
–0.5mA
-120
-0.2
-0.2
–0.6mA
-140
-0.4
–0.1mA
IB=0
0
-1
Collector-to-Emitter Voltage, VCE – V
-5
-2
-3
-4
I C - VBE
[TR]
VCE=–2V
hFE - I C
1000
[TR]
VCE=–2V
7
Ta=75°C
DC Current Gain, hFE
-4
5°C
25°C
–25°C
-3
Ta=7
-2
-5
Collector-to-Emitter Voltage, VCE – V
5
Collector Current, IC – A
–0.7mA
–10mA
-1.4
0
[TR]
–0.8mA
–12mA
–14mA
-1.6
0
I C - VCE
-200
Collector Current, IC – A
Collector Current, IC – A
-1.8
[TR]
-1
3
25°C
–25°C
2
100
7
5
3
2
0
0
0.2
0.4
0.6
0.8
10
-0.01
1.0
2
3
5
VCE(sat) - I C
-1000
7
5
[TR]
IC / IB=50
3
2
C
°C
5°
25
=7
C
5°
–2
Ta
-100
7
5
3
2
-10
7
5
3
2
-1.0
-0.01
2
3
5
7 -0.1
2
3
5
7 -1.0
2
3
5
3
2
-10
7
5
3
2
3
5 7 -0.1
2
3
5 7 -1.0
Collector Current, IC – A
2
3
5 7 -10
[TR]
IC / IB=50
5
3
2
-1.0
–25°C
7
Ta=75°C
25°C
5
3
2
-0.1
-0.01
2
3
5
7 -0.1
2
3
5
7 -1.0
2
2
3
5 7 -10
fT - IC
1000
3
5
7 -10
[TR]
VCE =–2V
7
Gain-Bandwidth Product, f T – MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
[TR]
IC / IB=20
C
5°C 25°
=7
a
T
C
5°
–2
2
5 7 -1.0
7
7 -10
3
2
-1.0
-0.01
3
Collector Current, IC – A
VCE(sat) - I C
-100
7
5
2
VBE(sat) - I C
-10
Collector Current, IC – A
-1000
7
5
7 -0.1
Collector Current, IC – A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Base-to-Emitter Voltage, VBE – V
5
3
2
100
7
5
3
2
10
7
57
-0.01
2
3
5
7 -0.1
2
3
5
7 -1.0
2
3
5
Collector Current, IC – A
No.6007–3/5
CPH6701
Cob - VCB
1000
7
5
100
7
5
3
2
10
7
5
3
2
1.0
-0.1
2
3
5
7 -1.0
2
3
5
7 -10
2
3
ICP
10m
IC
3
0m
P C - Ta
[TR]
tio
n
3
2
-0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board(600mm2×0.8mm)
2
3
5
7
2
-1.0
3
5
7
-10
2
I F - VF
[SBD]
3
0.6
2
×0
.8m
0.4
m)
0
0
20
40
60
80
100
120
140
7
5
3
2
0.01
7
5
3
2
160
0
0.1
0.2
Ambient Temperature, Ta – °C
[SBD]
Interterminal Capacitance, C – pF
100°C
3
2
75°C
0.1
7
5
50°C
3
2
0.01
7
5
25°C
3
2
0.001
70
2
4
6
8
10
0.4
0.5
12
14
C - VR
5
Ta=125°C
1.0
7
5
0.3
0.6
Forward Voltage, IF – V
I R - VR
3
2
–25°
C
bo
ard
(60
0m
m
0.1
25°C
0.8
ce
ram
ic
C
on
a
75°
1.0
2
125
°C
M
ou
nte
d
1.2
Ta=
1.3
Forward Current, IF – A
Collector Dissipation, PC – W
op
era
7
5
0.2
Reverse Current, IR – mA
s
Collector-to-Emitter Voltage, VCE – V
1.4
[SBD]
f=1MHz
3
2
100
7
5
3
2
10
3
5
7
1.0
2
3
5
7
10
2
Reverse Voltage, VR – V
Reverse Voltage, VR – V
IS - t
[SBD]
Current waveform 50Hz sine wave
14
Surge Forward Current, IS (Peak) – A
0µ
s
DC
-1.0
7
5
Collector-to-Base Voltage, VCB – V
1.6
50
s
10
2
3
2
5
[TR]
s
Collector Current, IC – A
-10
7
5
1m
3
2
Output Capacitance, Cob – pF
A S O
[TR]
f=1MHz
12
1s
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t – s
No.6007–4/5
CPH6701
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
PS No.6007–5/5