SANYO ECH8

TIG065E8
Ordering number : ENA1862A
SANYO Semiconductors
DATA SHEET
TIG065E8
N-Channel IGBT
Light-Controlling Flash Applications
Features
•
•
•
•
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm2
Halogen free compliance
•
•
•
Low voltage drive (2.5V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Emitter Voltage
Conditions
Ratings
VCES
VGES
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
V
±4
V
Maximum Collector-to-Emitter dv / dt
VGES
ICP
dv / dt
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-40 to +150
°C
Collector Current (Pulse)
PW≤1ms
Unit
400
VGE=2.5V, CM=100μF
VCE≤320V, starting Tch=25°C
±5
V
150
A
400
V / μs
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-004
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3000 pcs./reel
TIG065E8-TL-H
Top View
Packing Type: TL
0.25
2.9
Marking
0.15
8
5
ZE
2.3
4
1
0.65
0.9
0.25
LOT No.
TL
0.3
Electrical Connection
8
7
6
5
1
2
3
4
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
0.07
2.8
0 t o 0.02
Bot t om View
SANYO : ECH8
http://semicon.sanyo.com/en/network
60612 TKIM/N2410PJ TKIM TC-00002514 No. A1862-1/8
TIG065E8
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector-to-Emitter Breakdown Voltage
V(BR)CES
ICES
IGES
IC=2mA, VGE=0V
VCE=320V, VGE=0V
Collector-to-Emitter Saturation Voltage
VGE(off)
VCE(sat)
VCE=10V, IC=1mA
IC=100A, VGE=2.5V
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Ratings
Conditions
min
typ
Unit
max
400
V
VGE=±4V, VCE=0V
0.4
10
μA
±10
μA
0.9
V
7
V
4.2
VCE=10V, f=1MHz
3100
pF
30
pF
23
pF
Fig.1 Large Current R Load Switching Circuit
RL
CM
+
VCC
RG
TIG065E8
VGE
100kΩ
Note1. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device of gate-series
resistance RG when it is turned off.
Ordering Information
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
1.8V
75
50
25
0
°C
25
Collector Current, IC -- A
100
VCE=10V
75
V
125
V
GE =
Collector Current, IC -- A
125
IC -- VGE
150
2.5V
3.0
4.0
V
Tc=25°C
°C
IC -- VCE
150
Tc=
--25
°C
Device
TIG065E8-TL-H
100
75
50
25
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V
9
10
IT16024
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Emitter Voltage, VGE -- V
3.5
4.0
IT16025
No. A1862-2/8
TIG065E8
VCE -- VGE
Collector-to-Emitter Voltage, VCE -- V
9
8
7
6
4
IC=150A
130A
3
100A
5
2
1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
IC =150A
5
130A
4
100A
3
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IT16027
VCE(sat) -- Tc
9
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
8
7
6
IC =150A
5
130A
4
100A
3
2
8
7
=150A
3V, I C
V GE=
00A
V, I C=1
V GE=2.5
6
5
4
3
2
1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE=10V
IC=1mA
0.9
0.7
0.6
0.5
0.4
0.3
25
0.1
0
25
50
75
100
125
Case Temperature, Tc -- °C
7
5
3
2
tf
1000
7
5
tr
3
)
t d(on
2
2
3
5
7
100
2
3
Collector Current (Pulse), ICP -- A
5
7
1000
IT16032
150
IT16029
1000
7
5
3
2
100
7
5
10
150
Switching test circuit Fig.1
VGE=2.5V
VCC=320V
RG=140Ω
CM=100μF
PW=50μs
td (
off
)
125
Cies
3
2
Coes
Cres
0
2
4
6
8
10
12
14
16
Collector-to-Emitter Voltage, VCE -- V
IT16030
SW Time -- ICP
10000
100
75
f=1MHz
3
2
--25
50
Cies, Coes, Cres -- VCE
10000
7
5
0.2
100
10
0
Case Temperature, Tc -- °C
0.8
0
--50
--25
IT16028
VGE(off) -- Tc
1.0
0
--50
5.0
Cies, Coes, Cres -- pF
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
6
10
Tc=75°C
Gate-to-Emitter Voltage, VGE -- V
Switching Time, SW Time -- ns
7
Gate-to-Emitter Voltage, VGE -- V
9
0
8
0
5.0
Tc=25°C
9
IT16026
VCE -- VGE
10
VCE -- VGE
10
Tc= --25°C
18
20
IT16031
SW Time -- RG
10000
Switching test circuit Fig.1
VGE=2.5V
VCC=320V
ICP=150A
CM=100μF
PW=50μs
7
Switching Time, SW Time -- ns
Collector-to-Emitter Voltage, VCE -- V
10
5
3
2
tf
1000
7
tr
5
td(off)
)
t d(on
3
2
100
0
20
40
60
80
100
120
140
160
Gate Series Resistance, RG -- Ω
180
200
IT16033
No. A1862-3/8
TIG065E8
dv / dt -- RG
Switching test circuit Fig.1
VGE=2.5V
VCC=320V
ICP=150A
Turn OFF dv / dt -- V / μs
500
400
300
200
100
0
0
50
100
150
200
250
300
Gate Series Resistance, RG -- Ω
Tc=25°C
140
Tc=25°C
150
100
50
Tc=70°C
120
100
80
60
40
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate-to-Emitter Voltage, VGE -- V
CM -- ICP
500
5.0
5.5
IT16104
VCE=320V
VGE=3V
450
Main Capacitor, CM -- μF
Main Capacitor, CM -- μF
Tc=70°C
200
160
IT16103
VCE=320V
VGE=2.5V
250
VCE=320V
CM=100μF
0
0
350
CM -- ICP
300
ICP -- VGE
180
Collector Current (Pulse), ICP -- A
600
400
Tc=70°C
350
Tc=25°C
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
Collector Current (Pulse), ICP -- A
IT16036
dv / dt -- Turn OFF IC
500
Turn OFF dv / dt, dv / dt -- V / μs
160
0
0
20
40
60
80
100
120
Collector Current (Pulse), ICP -- A
140
160
IT16037
Tc=25°C
VCE≤320V
400
300
200
100
0
0
20
40
60
80
100
120
140
Turn OFF Collector Current, Turn OFF IC -- A
160
IT16038
No. A1862-4/8
TIG065E8
Definition of dv/dt
dv/dt is defined as the maximum slope of the below VCE curve during turn-off period.
dv/dt=ΔVCE/Δt=ΔVCE/100ns
Overall waveform
Enlarged picture of turn-off period
Turn-off period
V,I
VCE
Turn off VCE
Δt=100ns
IC
ICP
ΔVCE
Turn off IC
IC
t
VCE
IT15323
Definition of Switching Time
VGE
VGE:90%
VGE:10%
t
VCE
VCE:90%
VCE:10%
VCE:10%
t
IC
td(on)
tr
td(off)
IC:90%
IC:10%
t
tf
IT15324
No. A1862-5/8
TIG065E8
Embossed Taping Specification
TIG065E8-TL-H
No. A1862-6/8
TIG065E8
Outline Drawing
TIG065E8-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1862-7/8
TIG065E8
Note : TIG065E8 has protection diode between gate and emitter but handling it requires sufficient care
to be taken.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1862-8/8