SANYO CPH5824

CPH5824
Ordering number : ENN7750
CPH5824
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose
Switching Device Applications
Features
•
•
•
•
DC / DC converter applications.
Composite type with a N-channel sillicon MOSFET (MCH3405) and a schottky barrier diode (SB07-03C)
contained in one package facilitating high-density mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
• Low reverse current.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
±10
V
ID
1.1
A
IDP
PD
Allowable Power Dissipation
20
V
PW≤10µs, duty cycle≤1%
4.4
A
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
VRRM
VRSM
30
V
35
V
Average Output Current
IO
700
mA
Surge Forward Current
IFSM
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
2
A
Junction Temperature
Tj
50Hz sine wave, 1 cycle
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : XA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61504 TS IM TA-101045 No.7750-1/6
CPH5824
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
VDS=20V, VGS=0
20
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0
VDS=10V, ID=1mA
0.4
yfs
RDS(on)1
VDS=10V, ID=1A
1.4
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
V
1
µA
±10
µA
1.3
V
2.3
S
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
175
230
mΩ
215
300
mΩ
295
410
mΩ
Input Capacitance
Ciss
ID=0.1A, VGS=1.8V
VDS=10V, f=1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
100
pF
VDS=10V, f=1MHz
22
pF
Crss
VDS=10V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
6.5
ns
Rise Time
tr
td(off)
See specified Test Circuit
28
ns
See specified Test Circuit
19
ns
tf
See specified Test Circuit
13
ns
Qg
VDS=10V, VGS=4V, ID=1.1A
1.8
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=1.1A
VDS=10V, VGS=4V, ID=1.1A
0.4
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=1.1A, VGS=0
Turn-OFF Delay Time
Fall Time
Total Gate Charge
0.4
0.87
nC
1.2
V
[SBD]
Reverse Voltage
VR
Forward Voltage
VF
Reverse Current
Interterminal Capacitance
IR
C
VR=10V, f=1MHz, 1 cycle
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Package Dimensions
unit : mm
2171
IR=300µA
IF=700mA
30
VR=15V
0.15
3
4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
2.8
1.6
0.6
1
0.4
0.4
0.9
0.2
0.95
ns
3
0.05
2
0.7
1
pF
Electrical Connection
0.2
4
µA
10
0.6
5
V
80
25
5
2.9
V
0.55
2
Top view
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
No.7750-2/6
CPH5824
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
VDD=10V
Duty≤10%
100mA
ID=1A
RL=10Ω
VOUT
D
50Ω
100Ω
10Ω
100mA
VIN
10µs
PW=10µs
D.C.≤1%
10mA
VIN
4V
0V
--5V
G
ID -- VDS
2.5
[MOSFET]
VDS=10V
Ta=
6.0V
.5V
1
0.8
0.4
1.4
1.2
1.0
0.8
Ta=
75°
C
--25
°C
3.0V
1.6
Drain Current, ID -- A
1.2
ID -- VGS
2.0
1.8
10.0V
1.6
[MOSFET]
V
4.0V
2.0
Drain Current, ID -- A
CPH5824
S
°C
25
7
°C 5°
C
50Ω
--25
P.G
trr
0.6
0.4
VGS=1.0V
25
°C
0.2
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
Drain-to-Source Voltage, VDS -- V
IT02983
[MOSFET]
RDS(on) -- VGS
400
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Gate-to-Source Voltage, VGS -- V
IT02984
RDS(on) -- Ta
[MOSFET]
400
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
350
300
1.0A
250
ID=0.5A
200
150
100
50
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
10
IT07165
350
300
V
2.5
S=
250
, VG
0.5A
I D=
200
.0A,
I D=1
V
=4.0
VGS
150
100
50
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT07166
No.7750-3/6
[MOSFET]
25
1.0
7
5
°C
C
5°
=
Ta
3
--2
75
2
°C
0.1
7
5
3
VGS=0
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
0.01
0.001 2 3
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Drain Current, ID -- A
0.01
0.4
5
[MOSFET]
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Diode Forward Voltage, VSD -- V
IT02988
Ciss, Coss, Crss -- VDS [MOSFET]
3
VDD=10V
VGS=4V
7
0.5
IT07167
SW Time -- ID
100
f=1MHz
2
5
3
Ciss, Coss, Crss -- pF
tr
Switching Time, SW Time -- ns
[MOSFET]
5°
C
25
°C
--2
5°C
3
2
IF -- VSD
10
7
5
VDS=10V
Ta
=7
yfs -- ID
10
7
5
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
CPH5824
td(off)
2
tf
10
td(on)
7
5
Ciss
100
7
5
3
Coss
2
Crss
3
2
0.1
10
2
3
5
7
2
1.0
3
Drain Current, ID -- A
5
VGS -- Qg
10
10
7
5
4
6
8
10
12
14
Drain Current, ID -- A
3
2
3
2
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
PD -- Ta
IT02991
1.0
s
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
2
1
s
4
m
n
s
io
0m erat
op
C
5
10
ID=1.1A
1.0
7
5
D
6
20
1m
7
18
≤10µs
IDP=4.4A
3
2
8
16
Drain-to-Source Voltage, VDS -- V
IT02990
[MOSFET]
ASO
10
Gate-to-Source Voltage, VGS -- V
2
[MOSFET]
VDS=10V
ID=1.1A
9
Allowable Power Dissipation, PD -- W
0
IT07168
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT07169
[MOSFET]
M
0.8
ou
nt
0.6
ed
on
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2
✕0
.8m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Amibient Tamperature, Ta -- °C
140
160
IT07170
No.7750-4/6
CPH5824
IF -- VF
5
5
2
3
2
Reverse Current, IR -- µA
1.0
7
5
3
0.1
7
5
25°C
25°
C
2
3
[SBD]
5°
Ta=12
C
1000
Ta=
1
Forward Current, IF -- A
IR -- VR
[SBD]
5
100°C
2
100
75°C
5
2
50°C
10
5
2
25°C
1.0
5
2
2
0.1
0
0.01
0.2
0.4
0.6
0.8
Average Forward Power Dissipation, PF(AV) -- W
Forward Voltage, VF -- V
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.6
(4)
(3)
(1)
360°
0.2
Sine wave
360°
0.8
0
0.4
0.2
0.6
Average Forward Current, IO -- A
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
2.8
20
25
30
C -- VR
2
35
ID00384
[SBD]
100
7
5
3
2
10
180°
0
15
Reverse Voltage, VR -- V
[SBD]
(2)
θ
10
f=1MHz
Rectangular
wave
0.4
5
ID00383
PF(AV) -- IO
0.8
1.0
Interterminal Capacitance, C -- pF
0
1.0
ID00385
7
1.0
2
3
5
7
10
2
Reverse Voltage, VR -- V
3
5
7
ID00386
[SBD]
Current waveform 50Hz sine wave
2.4
IS
20ms
t
2.0
1.6
1.2
0.8
0.4
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00247
No.7750-5/6
CPH5824
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.
PS No.7750-6/6