Ordering number:EN6419 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH6801 DC/DC Converter Applications Package Dimensions unit:mm 2172 [CPH6801] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.05 0.6 · The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier diode that features short reverse recovery time and low forward voltage, therefore enabling high-density mounting. · Each device incorporated in the CPH6801 is equivalent with the 2SJ560 and the SBS004, respectively. 1.6 Features 2 3 0.95 0.7 0.9 0.2 1 0.4 Specifications 1 : Gate 2 : Source 3 : Anode 4 : Drain (Cathode Common) 5 : Drain (Cathode Common) 6 : Drain (Cathode Common) SANYO : CPH6 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS –20 V ±10 V ID –1 A Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% –4 A Allowable Power Dissipation PD Mounted on a ceramic board (600mm2×0.8mm) 0.9 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +125 ˚C [SBD] Repetitive Peak Reverse Voltage VRRM 15 V Non-repetitive Peak Reverse Surge Voltage 15 V Average Output Current VRSM IO 1 A Surge Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj –55 to +125 ˚C Storage Temperature Tstg –55 to +125 ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2492 No.6419–1/5 CPH6801 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS ID=–1mA, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 V –0.4 –10 µA ±10 µA –1.4 V | yfs | VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA RDS(on)1 ID=–500mA, VGS=–4V 420 550 mΩ RDS(on)2 890 mΩ Forward Transfer Admittance Static Drain-to-Source On-State Resistance –20 VDS=–20V, VGS=0 1.0 1.4 S ID=–300mA, VGS=–2.5V 630 Input Capacitance Ciss VDS=–10V, f=1MHz 100 pF Output Capacitance Coss 60 pF Reverse Transfer Capacitance Crss VDS=–10V, f=1MHz VDS=–10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 25 ns td(off) See specified Test Circuit 27 ns tf See specified Test Circuit 32 ns nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=–10V, VGS=–10V, ID=1.0A 5 1 nC 1 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=1.0A VDS=–10V, VGS=–10V, ID=1.0A Diode Forward Voltage VSD IS=–1.0A, VGS=0 VR VF1 VF2 IR=1mA IF=0.5A IR VR=6V Interterminal Capacitance C Reverse Recovery Time trr VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. –0.9 –1.5 V 0.30 0.35 0.35 0.40 V 500 µA [SBD] Reverse Voltage Forward Voltage Reverse Current Thermal Resistance Rthj-a 15 IF=1A V 42 pF 15 Mounted on a ceramic board (600mm2×0.8mm) 110 V ns ˚C/W Marking : QB Electrical Connection (Top view) Cathode Common D D D G S A Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=--10V VIN ID=--500mA 0V --4V Duty≤10% PW=10µs D.C.≤1% 50Ω G 100Ω 10µs P.G 10Ω 10mA VOUT 100mA VIN 100mA RL=20Ω D CPH6801 50Ω S --5V trr No.6419–2/5 CPH6801 ID -- VDS [MOSFET] VDS=--10V --3 --0.8 --2.0V --0.6 --0.4 2 5° C --2.0 °C V --2.5 --1.0 Ta= --25 °C --2.5 --1.5 75 --1 0.0 V Drain Current, ID – A --1.2 ID -- VGS --3.0 .0V --6 .0V --4 .0V --8.0V --1.4 [MOSFET] Drain Current, ID – A --1.6 --1.0 --0.5 VGS=--1.5V --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS – V RDS(on) -- VGS 1000 --1.0 0 --2.5 --3.0 --3.5 --4.0 IT00781 [MOSFET] 900 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 700 ID=--300mA --500mA 500 400 300 200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS – V yfs -- ID 10 [MOSFET] 25 =-Ta 5 °C 25 °C °C 75 3 , VG 0mA 0 300 200 100 --40 --20 0 20 40 60 80 100 IF -- VSD 120 140 160 IT00783 [MOSFET] VGS = 0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 0.1 --0.01 .0V --4 S= --5 I D= 400 --10 7 5 Forward Current, IF – A 2 7 500 Ambient Temperature, Ta – ˚C 5 1.0 --3 I D= 600 IT00782 3 --2 S= A, VG 00m 700 0 --60 --10 VDS=--10V 7 .5V 800 C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS (on) – mΩ --2.0 RDS(on) -- Ta 1000 Ta=25°C 800 Forward Transfer Admittance, | yfs | – S --1.5 [MOSFET] 0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00784 Drain Current, ID – A SW Time -- ID 5 0 [MOSFET] 7 Ciss, Coss, Crss – pF tr 7 5 tf 3 2 td(on) 10 --0.4 --0.6 5 --1.0 --1.2 --1.4 3 2 Ciss 100 7 Coss 5 3 7 --0.8 5 2 100 --0.2 Diode Forward Voltage, VSD – V IT00785 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz 1000 VDD=--10V VGS=--4V 3 Switching Time, SW Time – ns --1.0 Gate-to-Source Voltage, VGS – V 900 600 --0.5 IT00780 Ta=75 ° 0 Crss 2 td(off) 3 10 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID – A 2 3 5 IT00786 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS – V --18 --20 IT00787 No.6419–3/5 CPH6801 VGS -- Qg --10 --9 --10 7 5 --8 --7 --6 --5 --4 --3 --2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Total Gate Charge, Qg – nC 5.0 10 0m DC 3 Operation in this area is limited by RDS(on). 2 --0.1 7 5 s op era tio n Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS – V IT00788 PD -- Ta 1.2 5 3 5 IT00790 IF -- VF [MOSFET] [SBD] 3 2 na ce ram 0.6 ic bo ard 0.4 (6 00 mm 2 ×0 .8m 0.2 1.0 °C 25 7 5 =1 Ta 25 °C 3 2 °C do 50 nte 0.1 7 5 75 °C ou C M 0.8 0° 0.9 10 1.0 Forward Current, IF – A Allowable Power Dissipation, PD – W 100µs 1m s 10 ms ID=--1.0A 3 2 0 3 m) 2 0 0.01 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C IT00789 IR -- VR [SBD] 100 7 5 3 2 Ta=125°C 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.01 0 5 10 Reverse Voltage, VR – V C -- VR 1000 7 5 15 IT00623 0.1 0.2 Surge Forward Current, IS (Peak) – A 100 7 5 3 2 10 7 5 3 2 0.4 0.5 IT00622 PF(AV) -- IO [SBD] 0.8 ⁄Rectangular wave θ=60° 0.7 ¤Rectangular wave θ=120° ‹Rectangular wave θ=180° 0.6 ›Sine wave θ=180° ¤ ⁄ 0.5 › ‹ 0.4 0.3 Rectangular wave θ 0.2 360° Sine wave 0.1 180° 360° 1.0 0 0 0.2 0.4 0.6 0.8 1.2 Average Forward Current, IO -- A 1.4 IT00624 IS -- t [SBD] Current waveform 50Hz sine wave 12 2 0.3 Forward Voltage, VF – V [SBD] f=1MHz 3 1.0 1.0 0 Average Forward Power Dissipation, PF(AV) -- W 0 Reverse Current, IR – mA IDP=--4.0A --1.0 7 5 --1 Interterminal Capacitance, C – pF [MOSFET] 3 2 Drain Current, ID – A Gate-to-Source Voltage, VGS – V ASO [MOSFET] VDS=--10V ID=--1A Is 10 20ms t 8 6 4 2 0 2 3 5 7 10 Reverse Voltage, VR – V 2 3 IT00625 7 0.01 2 3 5 7 0.1 2 Time, t – s 3 5 7 1.0 2 3 IT00626 No.6419–4/5 CPH6801 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6419–5/5