Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • 0.15 0.3 5 4 3 2 0.65 1 0.07 1.6 2.0 5 4 0.85 0.25 2.1 0.25 [MCH5802] 1 2 3 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --30 ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V ±20 V --1 A --4 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 30 V Average Output Current IO 0.5 A Surge Forward Current 10 A Junction Temperature IFSM Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Marking : QB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-3176 No.6961-1/5 MCH5802 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS ID=--1mA, VGS=0 VDS=--30V, VGS=0 IGSS VGS(off) VGS=±16V, VDS=0 VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--500mA 570 RDS(on)2 Ciss --30 V --1 µA ±10 µA --2.6 V 820 ID=--500mA, VGS=--10V ID=--300mA, VGS=--4V mS 430 560 mΩ 780 1090 mΩ pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 80 Output Capacitance 15 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 13 pF Turn-ON Delay Time td(on) See specified Test Circuit 7 ns Rise Time tr td(off) See specified Test Circuit 20 ns See specified Test Circuit 15 ns Turn-OFF Delay Time Fall Time tf Qg 7 ns VDS=--10V, VGS=--10V, ID=--1A 2.6 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.6 Diode Forward Voltage VSD IS=--1A, VGS=0 VR VF 1 IR=0.5mA IF=0.3A VF 2 Interterminal Capacitance IR C IF=0.5A VR=10V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Total Gate Charge See specified Test Circuit nC --0.9 --1.5 V 0.35 0.40 V 0.42 0.47 V 200 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 30 V 20 pF 10 ns Electrical Connection (Top view) D C G : Gate S : Source A : Anode C : Cathode D : Drain S A Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --15V VIN Duty≤10% 100mA 0V --10V ID= --500mA RL=30Ω D VOUT PW=10µs D.C.≤1% 50Ω 100Ω 10Ω 100mA VIN 10mA G 10µs --5V G trr MCH5802 P.G 50Ω S No.6961-2/5 MCH5802 [MOSFET] Ta= --25 °C 75° C V --1.2 V --1.0 VGS= --3V --1.0 --0.8 --0.6 5°C Drain Current, ID -- A --4V Ta= 7 --6 --8 V V --5 --0.4 25 --25 °C °C --1 0 Drain Current, ID -- A [MOSFET] VDS= --10V --1.5 --0.5 ID -- VGS --1.4 25° C ID -- VDS --2.0 --0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 0 --2.0 IT03181 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 1400 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT03182 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1200 1000 --0.5A ID= --0.3A 800 600 400 200 0 0 --1 --2 --4 --5 --6 --7 --8 V --4 S= , VG 0.3A 80 -I D= 60 = --10V , V GS .5A I D= --0 40 20 0 --60 --10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT03183 Gate-to-Source Voltage, VGS -- V yfs -- ID [MOSFET] 3 VDS= --10V 2 IF -- VSD 140 160 IT03184 [MOSFET] VGS=0 2 --1.0 1.0 C 25° 7 °C -25 =a T °C 75 5 3 2 7 5 3 2 --0.1 7 5 3 2 --0.01 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 0 [MOSFET] 7 tf td(off) 10 td(on) 7 5 --0.6 --0.8 --1.0 --1.2 --1.4 3 2 Coss 10 Crss 7 5 3 3 2 2 1.0 --0.01 --0.4 5 3 2 --0.2 IT03186 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] Ciss f=1MHz 100 VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 5 3 tr 7 2 IT03185 SW Time -- ID 100 Switching Time, SW Time -- ns --9 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 --3 100 Ta=75 °C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT03187 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT03188 No.6961-3/5 MCH5802 VGS -- Qg [MOSFET] VDS= --10V ID= --1.4A [MOSFET] IDP= --4A <10µs 10 3 2 --8 --6 --4 --2 0 0.5 1.0 1.5 2.0 ID= --1A --1.0 7 5 Total Gate Charge, Qg -- nC s 10 C 0m s op er at io n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit 2 3 5 7--0.1 IT03189 PD -- Ta 1.0 m 3 2 --0.1 7 5 s 10 D --0.01 --0.01 2.5 0µ s 1m 3 2 0 Allowable Power Dissipation, PD -- W ASO --10 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 Drain-to-Source Voltage, VDS -- V IT03190 IR -- VR [SBD] [MOSFET] M 0.8 ou nt ed on ac 0.6 er am ic bo ar d( 0.4 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT03191 IF -- VF [SBD] 10 100 7 5 3 2 Reverse Current, IR -- mA 3 2 1.0 °C 7 5 2 = Ta 50 °C 3 2 5°C 5 12 10 0° C °C 0.1 7 5 75 Forward Current, IF -- A 7 5 3 2 25° C 1 Ta= 100°C 75°C 1.0 7 5 3 2 50°C 0.1 7 5 3 2 25°C 0.01 0.01 0.2 0.6 0.4 0.8 Forward Voltage, VF -- V (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° (1) 0.35 0.3 (2) (4) Rectangular wave 0.15 θ Sine wave 360° 0.05 0 0.1 0.2 0.3 0.4 15 20 25 180° 360° 0.5 Average Forward Current, IO -- A 0.6 0.7 IT00634 30 IT00633 C -- VR 100 [SBD] f=1MHz 7 (3) 0.2 0 10 Reverse Voltage, VR -- V [SBD] 0.25 0.1 5 IT00632 PF(AV) -- IO 0.4 0 1.0 Interterminal Capacitance, C -- pF 0 Average Forward Power Dissipation, PF(AV) -- W 10 7 5 3 2 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 Reverse Voltage, VR -- V 3 5 7 100 IT00635 No.6961-4/5 MCH5802 IS -- t Surge Forward Current, IFSM(Peak) -- A 12 [SBD] Current waveform 50Hz sine wave IS 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT00636 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6961-5/5