CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive [SBD] • Short reverse recovery time • Low forward voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS --30 ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Mounted on a ceramic board (600mm2✕0.8mm) 1unit V ±20 V --2 A --8 A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 35 V Average Output Current IO 1 A Surge Forward Current IFSM 10 A [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1cycle Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : YE Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 82306 / 60506PE MS IM TB-00002326 No. A0336-1/6 CPH5852 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGSS=±16V, VDS=0V VDS=--10V, ID=--1mA yfs RDS(on)1 VDS=--10V, ID=--1A Cutoff Voltage Forward Transfer Admittance --30 V --1.2 1.2 --1 µA ±10 µA --2.6 2.0 V S ID=--1A, VGS=--10V ID=--500mA, VGS=--4V 110 145 mΩ RDS(on)2 Ciss 205 290 mΩ VDS=--10V, f=1MHz 200 pF Output Capacitance Coss VDS=--10V, f=1MHz 47 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 32 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.2 ns Rise Time tr td(off) See specified Test Circuit. 2.9 ns See specified Test Circuit. 21 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 8.7 ns VDS=--10V, VGS=--10V, ID=--2A 5.5 nC 0.98 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A VDS=--10V, VGS=--10V, ID=--2A Diode Forward Voltage VSD IS=--2A, VGS=0V VR VF 1 IR=0.5mA IF=0.7A VF 2 Interterminal Capacitance IR C IF=1.0A VR=16V VR=10V, f=1MHz cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 0.82 nC --0.85 --1.2 V 0.45 0.5 V 0.48 0.53 V 15 µA [SBD] Reverse Voltage Forward Voltage Reverse Current Package Dimensions unit : mmm 7017A-005 30 27 4 4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.15 3 1.6 2.8 0.6 0.2 0.9 0.05 1 1 2 0.95 0.4 ns 3 0.2 0.6 5 pF 10 Electrical Connection 5 2.9 V 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No. A0336-2/6 CPH5852 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --15V 100mA ID= --1A RL=15Ω VOUT D 50Ω 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --10V --5V G trr CPH5852 P.G 50Ω S ID -- VDS [MOSFET] [MOSFET] VDS= --10V --4. --4.5 --4.0 VGS= --3.0V --0.8 --0.4 --3.0 --2.5 --2.0 --1.5 5°C °C --25° C --1.2 --3.5 Ta= 7 5V . --3 Drain Current, ID -- A --1.6 Drain Current, ID -- A ID -- VGS --5.0 0V V --6.0 --10. 0 V --2.0 --1.0 25 --0.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 Drain-to-Source Voltage, VDS -- V IT03212 RDS(on) -- VGS [MOSFET] 400 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Gate-to-Source Voltage, VGS -- V IT03213 RDS(on) -- Ta [MOSFET] 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 250 --1.0A 200 ID= --0.5A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --18 --20 IT03214 350 300 V --4 S= , VG 0.5A 250 -I D= 200 V = --10 A, V GS 150 1.0 I D= -- 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03215 No. A0336-3/6 CPH5852 3 25 2 °C 5°C --2 °C = 75 Ta 1.0 7 5 3 --1.0 7 5 3 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 2 --0.01 --0.2 5 7 --10 IT03216 Drain Current, ID -- A --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT03217 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] 3 f=1MHz VDD= --15V VGS= --10V 100 Ciss 2 7 5 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 --25°C 5 [MOSFET] VGS=0V 25°C 7 IS -- VSD --10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS= --10V Ta=7 5°C yfs -- ID 10 td(off) 2 10 tf td(on) 7 5 100 7 5 Coss tr 3 Crss 3 2 2 1.0 --0.1 10 2 3 5 7 2 --1.0 3 Drain Current, ID -- A Drain Current, ID -- A s 3 4 5 6 Total Gate Charge, Qg -- nC IT03220 PD -- Ta 1.0 s 2 1m 1 s 0µ 0 on 0 m 3 2 --0.1 7 5 3 2 --1 ati --2 --1.0 7 5 s --3 --30 er --4 ID= --2A op --5 --25 0m --6 --20 10 --7 --15 10 3 2 --8 --10 Drain-to-Source Voltage, VDS -- V IT03219 ASO [MOSFET] ≤10µs IDP= --8A 10 --10 7 5 --5 DC Gate-to-Source Voltage, VGS -- V [MOSFET] VDS= --10V ID= --2A --9 Allowable Power Dissipation, PD -- W 0 IT03218 VGS -- Qg --10 5 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT03221 [MOSFET] 0.9 M ou 0.8 nt ed on ac er 0.6 am ic bo ar d (6 00 0.4 m m2 ✕ 0. 8m m 0.2 )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03222 No. A0336-4/6 CPH5852 IF -- VF 3 2 Reverse Current, IR -- µA 5 3 2 0.1 7 5 Ta= 125 °C 100 °C 75°C 50°C 25°C 0°C --25°C Forward Current, IF -- A 7 3 2 75°C 100 5 50°C 10 5 25°C 1.0 5 0°C 0.1 5 0.01 5 --25°C 0.001 5 0.01 0.0001 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage, VF -- V 0 (2) (4)(3) 360° 0.5 Sine wave 0.4 180° 360° 0.3 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0.1 0 0 0.2 25 30 35 IT09554 2 (1) θ 0.6 20 C -- VR 3 Rectangular wave 0.7 15 Reverse Voltage, VR -- V PF(AV) -- IO 0.8 10 5 IT09553 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Ta=125°C 100°C 1000 5 1.0 0.4 0.6 0.8 1.2 IT09555 IFSM -- t 14 100 7 5 3 2 10 1.0 Average Output Current, IO -- A Surge Forward Current, IFSM(Peak) -- A IR -- VR 10000 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09556 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No. A0336-5/6 CPH5852 Note on usage : Since the CPH5852 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0336-6/6