MCH5834 Ordering number : ENA0558 SANYO Semiconductors DATA SHEET MCH5834 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET (MCH3435) and a schottky barrier diode (SS0503SH) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS 30 10 V ID 0.7 A IDP PD V PW≤10µs, duty cycle≤1% 2.8 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 30 V Average Output Current IO 0.5 A Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle 5 A --55 to +125 °C --55 to +125 °C Marking : XY (*1) : Note, when designing a circuit using this it has a gate (oxide film) protection diode connected only between its gate and source. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806PE SY IM TC-00000259 No. A0558-1/6 MCH5834 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) VGS=8V, VDS=0V VDS=10V, ID=100µA 0.4 yfs RDS(on)1 VDS=10V, ID=350mA 0.45 RDS(on)2 RDS(on)3 ID=350mA, VGS=4V ID=200mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz Turn-ON Delay Time td(on) Rise Time tr td(off) Turn-OFF Delay Time Fall Time 30 V 1 µA 1 µA 1.3 V 0.7 0.9 Ω 0.8 1.15 Ω 1.6 2.4 0.8 S 30 Ω pF 7 pF 3.5 pF See specified Test Circuit. 8 ns See specified Test Circuit. 6 ns See specified Test Circuit. 10 ns tf Qg See specified Test Circuit. 8 ns VDS=10V, VGS=4V, ID=700mA 1 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=700mA 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=700mA 0.2 Diode Forward Voltage VSD IS=700mA, VGS=0V VR VF 1 IR=0.5mA IF=0.3A VF 2 Interterminal Capacitance IR C IF=0.5A VR=15V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Total Gate Charge nC 0.93 1.2 V 0.37 0.42 V 0.42 0.47 V 120 µA [SBD] Reverse Voltage Forward Voltage Reverse Current Package Dimensions 13 5 2.0 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 0.15 2.1 1.6 1 2 3 Top view 3 0.65 0.3 0.07 0.85 0.25 ns 4 0 to 0.02 2 pF 10 4 1 V Electrical Connection unit : mm (typ) 7021A-008 0.25 15 1 5 2 3 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 No. A0558-2/6 MCH5834 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=15V Duty≤10% D 50Ω PW=10µs D.C.≤1% 100Ω 10mA 100mA ID=350mA RL=42Ω VOUT VIN 10Ω 100mA VIN 4V 0V 10µs --5V G trr MCH5834 S ID -- VDS [MOSFET] ID -- VGS 0.8 Ta= --25 °C V V 5°C --25 °C 0.2 Ta= 7 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 Drain-to-Source Voltage, VDS -- V IT07510 RDS(on) -- VGS [MOSFET] 5.0 4.0 3.0 350mA 2.0 ID=200mA 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 Gate-to-Source Voltage, VGS -- V 7.0 8.0 IT09241 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07511 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 1.6 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω [MOSFET] VDS=10V 0.4 25° 0.1 0.6 C VGS=1.5V 0.2 Drain Current, ID -- A 0.3 2.0 2.5 4. 6.0V 0V 3.5V Drain Current, ID -- A 3.0 V 0.4 75° C 50Ω 25° C P.G 1.4 1.2 1.0 A, 200m =2.5V VGS I D= 0.8 =4.0V , V GS 0mA I D=35 0.6 0.4 0.2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT09242 No. A0558-3/6 MCH5834 yfs -- ID [MOSFET] 75 3 2 °C °C 25 3 2 0.1 7 5 3 0.1 --25° C Ta= 5 Ta= 75° C 5 °C --25 7 25°C 7 2 7 2 3 5 7 2 0.1 3 SW Time -- ID 3 5 0.01 0.2 7 1.0 IT07514 [MOSFET] 0.4 0.6 0.8 1.0 1.2 2 1.4 Diode Forward Voltage, VSD -- V IT07515 Ciss, Coss, Crss -- VDS [MOSFET] 60 f=1MHz VDD=15V VGS=4V 50 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VGS=0V 1.0 1.0 Drain Current, ID -- A td(off) 10 td(on) tf 7 tr 5 40 Ciss 30 20 Coss 10 3 2 0.1 5 3 7 VGS -- Qg 4.0 0 1.0 IT07516 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.0 1.5 1.0 0.5 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Total Gate Charge, Qg -- nC RDS(on) -- ID 3 25 30 5 3 5 7 0.1 2 Drain Current, ID -- A 7 5 2 3 5 3 5 7 1.0 IT07520 7 2 0.1 Drain Current, ID -- A RDS(on) -- ID 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C --25°C 7 Ta=75°C 25°C --25°C [MOSFET] Ta=75°C 1.0 1.0 IT09244 VGS=2.5V 2 20 2 3 0.01 1.0 2 3 0.01 15 VGS=4V 2.5 0.1 10 Drain-to-Source Voltage, VDS -- V IT09243 RDS(on) -- ID [MOSFET] 3 3.0 0 5 [MOSFET] VDS=10V ID=0.7A 3.5 Crss 0 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V [MOSFET] 2 2 5 0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω IS -- VSD 3 VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 3 5 7 1.0 IT07519 [MOSFET] VGS=1.5V 5 3 Ta=75°C 2 --25°C 25°C 1.0 7 5 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT07521 No. A0558-4/6 MCH5834 ASO [MOSFET] 3 30 0µ 1m s s 10 m s 10 0m s Drain Current, ID -- A 2 1.0 7 5 ID=0.7A DC 3 2 op era tio n( Ta = Operation in this area is limited by RDS(on). 0.1 7 5 25 °C ) 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V IF -- VF 1.0 3 do na ram ic [SBD] 0.1 7 25° C 100 °C 75°C 50°C 25°C 5 0.01 0.2 0.3 0.4 0.5 Forward Voltage, VF -- V mm 0.2 2 ✕0 .8m m) 20 40 60 0.6 80 100 120 140 IT11803 IR -- VR [SBD] 5 Ta=12 °C 100°C 75°C 1000 7 5 3 2 50°C 100 7 5 3 2 25°C 10 7 5 3 2 1.0 0 5 10 15 20 25 IT07928 C -- VR 100 [SBD] f=1MHz 7 (2) (4) (3) Interterminal Capacitance, C -- pF (1) 0.3 θ 360° Rectangular wave 0.2 180° 360° 0.15 0.1 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.05 0 0 30 Reverse Voltage, VR -- V [SBD] 160 Ambient Temperature, Ta -- °C Sine wave 0.25 1u nit IT07927 PF(AV) -- IO 0.35 (9 00 100000 7 5 3 2 Reverse Current, IR -- µA 2 0.1 bo ard 10000 7 5 3 2 0 ce 0.4 0 Ta= 1 Forward Current, IF -- A ou nte 5 3 2 Average Forward Power Dissipation, PF(AV) -- W M 0.6 IT11802 5 3 [MOSFET] 0 7 0.1 0.2 0.3 0.4 0.5 0.6 Average Output Current, IO -- A IT08187 IFSM -- t [SBD] 7 Surge Forward Current, IFSM(Peak) -- A PD -- Ta 0.8 ≤10µs IDP=2.8A Allowable Power Dissipation, PD -- W 5 5 3 2 10 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 IT07891 Current waveform 50Hz sine wave 6 IS 20ms t 5 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00387 No. A0558-5/6 MCH5834 Note on usage : Since the MCH5834 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0558-6/6