SANYO MCH5809

Ordering number : ENN7525
MCH5809
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
MCH5809
DC / DC Converter Applications
Features
Package Dimensions
Composite type with an N-Channel Sillicon MOSFET unit : mm
(MCH3443) and a Schottky Barrier Diode (SBS006M) 2195
contained in one package facilitating high-density
mounting.
[MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
•
0.15
5
4
3
2
1
0.65
0.07
1.6
0.25
2.1
0.25
[MCH5809]
0.3
5
2.0
4
0.85
(Bottom view)
1
2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
3
(Top view)
SANYO : MCPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
±12
V
ID
1.5
A
IDP
PD
Allowable Power Dissipation
30
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
V
6
A
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
VRRM
VRSM
30
V
30
V
Average Output Current
IO
0.5
A
Surge Forward Current
IFSM
3
A
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
50Hz sine wave, 1 cycle
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : QJ
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100394 No.7525-1/5
MCH5809
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=1mA, VGS=0
VDS=30V, VGS=0
IGSS
VGS(off)
VGS=±8V, VDS=0
VDS=10V, ID=1mA
0.4
yfs
RDS(on)1
VDS=10V, ID=800mA
1.3
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
30
V
1
µA
±10
µA
1.3
V
2.2
S
165
215
mΩ
RDS(on)2
Ciss
ID=800mA, VGS=4V
ID=400mA, VGS=2.5V
210
295
mΩ
VDS=10V, f=1MHz
130
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
22
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
16
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
9
ns
Rise Time
tr
td(off)
See specified Test Circuit
20
ns
See specified Test Circuit
23
ns
tf
See specified Test Circuit
29
ns
Qg
VDS=10V, VGS=4V, ID=1.5A
2.2
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=1.5A
VDS=10V, VGS=4V, ID=1.5A
0.52
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=1.5A, VGS=0
VR
VF 1
IR=0.5mA
IF=0.3A
VF 2
Interterminal Capacitance
IR
C
IF=0.5A
VR=10V
VR=10V, f=1MHz
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Static Drain-to-Source On-State Resistance
Input Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
0.52
nC
0.9
1.2
V
0.35
0.40
V
0.42
0.47
V
200
µA
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
30
V
20
pF
10
ns
Electrical Connection (Top view)
5
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
2
3
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
VDD=15V
VIN
Duty≤10%
100mA
4V
0V
ID=800mA
RL=18.75Ω
D
VOUT
PW=10µs
D.C.≤1%
50Ω
100Ω
10Ω
100mA
VIN
10mA
1
10µs
--5V
G
trr
MCH5809
P.G
50Ω
S
No.7525-2/5
MCH5809
Ta=
--2 2
5°C 5°C
1.8
1.6
0.6
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta
=
0.2
VGS=1.0V
0
0
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0
1.0
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
IT06102
RDS(on) -- VGS
500
0.5
C
0.8
1.4
VDS=10V
--25
°
1.5V
4.0V
1.0
75
°C 25°
C
1.2
Drain Current, ID -- A
2.5
V
3.0V
1.4
Drain Current, ID -- A
ID -- VGS
2.0
75°
C
ID -- VDS
1.6
IT06103
RDS(on) -- Ta
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
A
ID=800m
A
ID=400m
350
300
250
200
150
100
50
0
0
2
4
6
8
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
C
25°
2
Ta-
1.0
5°C
--2
C
75°
7
5
3
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
3
100
50
--40
--20
0
2
tf
10
7
5
td(on)
tr
120
140
160
IT06105
1.0
7
5
3
2
0.1
7
5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT06107
Ciss, Coss, Crss -- VDS
f=1MHz
5
3
2
Ciss
100
7
5
3
3
Coss
Crss
2
2
1.0
0.01
100
7
Ciss, Coss, Crss -- pF
td(off)
80
Diode Forward Voltage, VSD -- V
3
100
7
5
60
VGS=0
1000
2
40
IF -- VSD
IT06106
VDD=15V
VGS=4V
3
20
3
2
0.01
0.2
5
SW Time -- ID
1000
7
5
Switching Time, SW Time -- ns
150
3
2
2
0.1
0.01
200
10
7
5
5
3
2.5V
S=
VG
,
A
400m
=4V
I D=
VGS
mA,
0
0
8
I D=
250
Ambient Temperature, Ta -- °C
VDS=10V
7
300
IT06104
yfs -- ID
10
350
0
--60
10
Gate-to-Source Voltage, VGS -- V
400
5°C
25°
C
--25
°C
400
450
Ta7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
450
10
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT06108
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT06109
No.7525-3/5
MCH5809
VGS -- Qg
10
7
5
VDS=10V
ID=1.5A
3.5
<10µs
3
2
Drain Current, ID -- A
3.0
2.5
2.0
1.5
1.0
0.5
1.0
1.5
2.0
Total Gate Charge, Qg -- nC
C
op
0.1
7
5
s
0m
s
er
at
io
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm) 1unit
2 3
5 7 0.1
IT06110
PD -- Ta
1.0
m
10
D
0.01
0.01
2.5
10
3
2
2
0
ID=1.5A
1.0
7
5
3
0.5
0
Allowable Power Dissipation, PD -- W
ASO
IDP=6A
s
0µ
10 ms
1
Gate-to-Source Voltage, VGS -- V
4.0
2 3
5 7 1.0
2 3
5 7 10
2 3
5
Drain-to-Source Voltage, VDS -- V
IT06111
IR -- VR
[SBD]
M
0.8
ou
nt
ed
on
ac
er
0.6
am
ic
bo
ar
0.4
d(
90
0m
m2
✕0
.8m
m
0.2
)1
un
it
0
0
20
40
60
80
100
120
140
160
Ambient Tamperature, Ta -- °C
IT06112
IF -- VF
[SBD]
2
100
7
5
3
2
1.0
Reverse Current, IR -- mA
5
0.1
50
°C
°C
Ta
=
2
25
12
°C
5°
C
3
10
0
7
5
75
°C
Forward Current, IF -- A
7
3
2
25°
1
Ta=
C
100°C
75°C
1.0
7
5
3
2
50°C
0.1
7
5
3
2
25°C
0.01
0.01
0.2
0.4
Diode Forward Voltage, VF -- V
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
0.35
0.3
(3)
(2)
(4)
0.2
Rectangular wave
0.15
θ
Sine wave
360°
0.05
0
0.1
0.2
0.3
15
20
25
C -- VR
100
30
IT00633
[SBD]
f=1MHz
0.25
0
10
Reverse Voltage, VR -- V
[SBD]
(1)
0.1
5
IT05808
PF(AV) -- IO
0.4
0
0.6
0.4
180°
360°
0.5
Average Forward Current, IO -- A
0.6
0.7
IT00634
Interterminal Capacitance, C -- pF
0
Average Forward Power Dissipation, PF(AV) -- W
10
7
5
3
2
7
5
3
2
10
7
1.0
2
3
5
7
10
Reverse Voltage, VR -- V
2
3
IT05809
No.7525-4/5
MCH5809
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
3.5
Current waveform 50Hz sine wave
3.0
IS
20ms
t
2.5
2.0
1.5
1.0
0.5
0
7 0.01
2
3
5
7 0.1
2
3
Time, t -- s
5
7
1.0
2
3
ID00338
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2004. Specifications and information herein are subject
to change without notice.
PS No.7525-5/5