Ordering number : ENN7525 MCH5809 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5809 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3443) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • 0.15 5 4 3 2 1 0.65 0.07 1.6 0.25 2.1 0.25 [MCH5809] 0.3 5 2.0 4 0.85 (Bottom view) 1 2 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 3 (Top view) SANYO : MCPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ±12 V ID 1.5 A IDP PD Allowable Power Dissipation 30 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V 6 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 30 V Average Output Current IO 0.5 A Surge Forward Current IFSM 3 A [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QJ Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31504 TS IM TA-100394 No.7525-1/5 MCH5809 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0 VDS=30V, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=800mA 1.3 Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance 30 V 1 µA ±10 µA 1.3 V 2.2 S 165 215 mΩ RDS(on)2 Ciss ID=800mA, VGS=4V ID=400mA, VGS=2.5V 210 295 mΩ VDS=10V, f=1MHz 130 pF Output Capacitance Coss VDS=10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 16 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time tr td(off) See specified Test Circuit 20 ns See specified Test Circuit 23 ns tf See specified Test Circuit 29 ns Qg VDS=10V, VGS=4V, ID=1.5A 2.2 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=1.5A VDS=10V, VGS=4V, ID=1.5A 0.52 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=1.5A, VGS=0 VR VF 1 IR=0.5mA IF=0.3A VF 2 Interterminal Capacitance IR C IF=0.5A VR=10V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge 0.52 nC 0.9 1.2 V 0.35 0.40 V 0.42 0.47 V 200 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 30 V 20 pF 10 ns Electrical Connection (Top view) 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 2 3 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=15V VIN Duty≤10% 100mA 4V 0V ID=800mA RL=18.75Ω D VOUT PW=10µs D.C.≤1% 50Ω 100Ω 10Ω 100mA VIN 10mA 1 10µs --5V G trr MCH5809 P.G 50Ω S No.7525-2/5 MCH5809 Ta= --2 2 5°C 5°C 1.8 1.6 0.6 0.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Ta = 0.2 VGS=1.0V 0 0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT06102 RDS(on) -- VGS 500 0.5 C 0.8 1.4 VDS=10V --25 ° 1.5V 4.0V 1.0 75 °C 25° C 1.2 Drain Current, ID -- A 2.5 V 3.0V 1.4 Drain Current, ID -- A ID -- VGS 2.0 75° C ID -- VDS 1.6 IT06103 RDS(on) -- Ta 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ A ID=800m A ID=400m 350 300 250 200 150 100 50 0 0 2 4 6 8 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S C 25° 2 Ta- 1.0 5°C --2 C 75° 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 100 50 --40 --20 0 2 tf 10 7 5 td(on) tr 120 140 160 IT06105 1.0 7 5 3 2 0.1 7 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT06107 Ciss, Coss, Crss -- VDS f=1MHz 5 3 2 Ciss 100 7 5 3 3 Coss Crss 2 2 1.0 0.01 100 7 Ciss, Coss, Crss -- pF td(off) 80 Diode Forward Voltage, VSD -- V 3 100 7 5 60 VGS=0 1000 2 40 IF -- VSD IT06106 VDD=15V VGS=4V 3 20 3 2 0.01 0.2 5 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 150 3 2 2 0.1 0.01 200 10 7 5 5 3 2.5V S= VG , A 400m =4V I D= VGS mA, 0 0 8 I D= 250 Ambient Temperature, Ta -- °C VDS=10V 7 300 IT06104 yfs -- ID 10 350 0 --60 10 Gate-to-Source Voltage, VGS -- V 400 5°C 25° C --25 °C 400 450 Ta7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 450 10 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT06108 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT06109 No.7525-3/5 MCH5809 VGS -- Qg 10 7 5 VDS=10V ID=1.5A 3.5 <10µs 3 2 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 0.5 1.0 1.5 2.0 Total Gate Charge, Qg -- nC C op 0.1 7 5 s 0m s er at io n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 1unit 2 3 5 7 0.1 IT06110 PD -- Ta 1.0 m 10 D 0.01 0.01 2.5 10 3 2 2 0 ID=1.5A 1.0 7 5 3 0.5 0 Allowable Power Dissipation, PD -- W ASO IDP=6A s 0µ 10 ms 1 Gate-to-Source Voltage, VGS -- V 4.0 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Drain-to-Source Voltage, VDS -- V IT06111 IR -- VR [SBD] M 0.8 ou nt ed on ac er 0.6 am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m m 0.2 )1 un it 0 0 20 40 60 80 100 120 140 160 Ambient Tamperature, Ta -- °C IT06112 IF -- VF [SBD] 2 100 7 5 3 2 1.0 Reverse Current, IR -- mA 5 0.1 50 °C °C Ta = 2 25 12 °C 5° C 3 10 0 7 5 75 °C Forward Current, IF -- A 7 3 2 25° 1 Ta= C 100°C 75°C 1.0 7 5 3 2 50°C 0.1 7 5 3 2 25°C 0.01 0.01 0.2 0.4 Diode Forward Voltage, VF -- V (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.35 0.3 (3) (2) (4) 0.2 Rectangular wave 0.15 θ Sine wave 360° 0.05 0 0.1 0.2 0.3 15 20 25 C -- VR 100 30 IT00633 [SBD] f=1MHz 0.25 0 10 Reverse Voltage, VR -- V [SBD] (1) 0.1 5 IT05808 PF(AV) -- IO 0.4 0 0.6 0.4 180° 360° 0.5 Average Forward Current, IO -- A 0.6 0.7 IT00634 Interterminal Capacitance, C -- pF 0 Average Forward Power Dissipation, PF(AV) -- W 10 7 5 3 2 7 5 3 2 10 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT05809 No.7525-4/5 MCH5809 IFSM -- t Surge Forward Current, IFSM(Peak) -- A 3.5 Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7525-5/5