Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56 V V A A A V W °C V 120 360 A A Inverse Diode IF= – ID IFM= – IDM SEMITRANS® M Power MOSFET Modules 120 A, 200 V, 17 mΩ SKM 120 B 020 Replaces discontinued SKM 224 A Characteristics Symbol Conditions 1) min. typ. max. Units V(BR)DSS VGS(th) IDSS VGS = 0, ID = 0,25 mA VGS = VDS, ID = 1 mA Tj = 25 °C VGS = 0 VGS = 200 V Tj = 125 °C VGS = 20 V, VDS = 0 VGS = 10 V, ID = 120 A VDS = 5 V, ID = 75 A 200 2,1 – – – – 60 – 3,0 50 300 10 15 90 – 4,0 250 1000 100 17 – V V µA µA nA mΩ S IGSS RDS(on) gfs CCHC Ciss Coss Crss LDS per MOSFET VGS = 0 VDS = 25 V f = 1 MHz – – – – – – 10,4 2 1 – 100 16 4,5 1,4 30 pF nF nF nF nH td(on) tr td(off) tf – – – – 120 60 240 40 – – – – ns ns ns ns Inverse Diode IF = 240 A, VGS = 0 VSD Tj = 25 °C 2) trr Tj = 150 °C 2) Tj = 25 °C 2) Qrr Tj = 150 °C 2) – – – – – 1,2 400 700 5,0 8 1,5 – – – – V ns ns µC Thermal Characteristics per MOSFET Rthjc per module Rthch – – – – 0,25 0,05 °C/W °C/W 4 35 2,5 22 – – – – – – – – 5 44 3,5 24 5x9,81 250 Nm lb.in. Nm lb.in. m/s2 g VDD = 100 V ID = 75 A VGS = 10 V RGS = 3,3 Ω Mechanical Data M1 M2 to heatsink SI Units (M6) US Units for terminals SI Units (M5) US Units a w Case 1) 2) → page B 5 – 42 D 70 Tcase = 25 °C, unless otherwise specified. IF = – ID, VR = 100 V, – diF/dt = 100 A/µs © by SEMIKRON 0896 SEMITRANS 2 Features • N Channel, enhancement mode • Short internal connections avoid oscillations • Switching kWs in less than 1 µs • Isolated copper baseplate using Al2O3 ceramic Direct Copper Bonding Technology (DCB) • All electrical connections on top for easy busbaring • Large clearances and creepage distances • Material, clearances and creepage distances meet UL-specifications Typical Applications • • • • • • Switched mode power supplies DC servo and robot drives DC choppers UPS equipment Plasma cutting Not suitable for linear amplification This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. B 5 – 39 B 5 – 40 0896 © by SEMIKRON © by SEMIKRON 0896 B 5 – 41 B 5 – 42 0896 © by SEMIKRON