HiPerFETTM MOSFET Module VMO 550-01F VDSS = 100 V = 590 A ID25 RDS(on) = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 10 kW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 ID80 TS = 25°C TS = 80°C 590 440 A A IDM TS = 25°C 2360 A PD TC = 25°C TS = 25°C 2200 1470 W W Maximum Ratings -40 ...+150 °C TJM 150 °C Tstg -40 ... +125 °C pulse width limited by TJM TJ VISOL Md 50/60 Hz IISOL £ 1 mA t = 1 min t=1s 3000 3600 D = Drain S = Source KS = Kelvin Source G = Gate Features ● ● V~ ● ● Mounting torque (M6) Terminal connection torque (M5) 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. ● ● Weight KS D typical including screws 250 International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive g Applications Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ● ● ● VDSS VGS = 0 V, ID = 6 mA VGS(th) VDS = 20 V, ID = 110 mA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) 100 3 6 V ±500 nA TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved V 3 mA 12 mA ● Advantages ● ● 2.1 mW AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers ● ● Easy to mount Space and weight savings High power density Low losses 750 Symbol 1-2 VMO 550-01F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Dimensions in mm (1 mm = 0.0394") 5 330 S 50 nF 17.6 nF Crss 8.8 nF td(on) 250 ns gfs VDS = 10 V; ID = 0.5 • ID25 pulsed Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 500 ns td(off) RG = 2 W (external) 800 ns 200 ns 2000 nC 385 nC 940 nC tf Qg Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthJS 0.057 K/W with 30 mm heat transfer paste Source-Drain Diode 0.085 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS; VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.9 trr IF = IS, -di/dt = 1000 A/ms, VDS = 0.5 • VDSS 300 IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 2000 IXYS All rights reserved 590 A 2360 A 1.2 V ns 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2