SKM 100GD063DL Absolute Maximum Ratings Symbol Conditions IGBT 5 1 23 4 5 1 -3. 4 :; :;12( 1 234& $ ) '.. -7. * 1 8. 4 93 * 2.. * < 2. 5 1 -23 4 -. @ 1 23 4 -.. * 1 8. 4 A3 * 2.. * A2. * SEMITRANS® 6 Superfast NPT-IGBT Module SKM 100GD063DL 1 7.. = > 2. = ? '.. Units 1 23 4 Values Inverse Diode + 5 1 -3. 4 +:; +:;12(+ +; 1 -. = B 5 1 -3. 4 Module :; * 5 " $ Features !" #$%& $ $ " ' ( Characteristics Symbol Conditions IGBT 1 & 1 7 * 1 . & 1 Typical Applications ) ) $ * . ) $ + , -. /!0 *& - B 1 -3 ) ) : 1 -. F :5C 4 23.. typ. max. Units D&3 3&3 '&3 5 1 23 4 .&-3 .&D3 * 5 1 23 4 -&.3 5 1 -23 4 - 5 1 234 -.&3 F 5 1 -234 -D F 2&- 2&3 5 1 -234$B 2&D 2&8 1 - ;!0 3&' .&' + + .&D + 2D. 3. D. D 7.. 73 H 7 H 1 .BBB-3 : 1 -. F C D. BBB E-23 min. G 4 1 234& $ ) 1 -.. *& 1 -3 5 1 234$B 1 23& 1 . C D. BBB E-3. 1 7.. 1 -..* 5 1 -23 4 1 < -3 .&2A IJK GD 1 24-08-2009 DIL © by SEMIKRON SKM 100GD063DL Characteristics Symbol Conditions Inverse Diode + 1 ® SEMITRANS 6 + 1 -.. *= 1 . min. typ. max. Units 5 1 23 4$B -&33 -&9 5 1 -23 4$B -&33 +. 5 1 23 4 .&9 + 5 1 23 4 -. F ::; G + 1 -.. * )J) 1 -... *J@ 1 C-3 = 1 '.. :5CL )) 5 1 -23 4 8 DD * @ -&3 H .&' IJK '. ! .&.3 IJK 3 -A3 " Module Superfast NPT-IGBT Module SKM 100GD063DL M :C ) $ ; / ;3 D This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Features This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. !" #$%& $ $ " ' ( Typical Applications ) ) $ * ) $ + , -. /!0 GD 2 24-08-2009 DIL © by SEMIKRON SKM 100GD063DL Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 24-08-2009 DIL © by SEMIKRON SKM 100GD063DL Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL recovered charge 4 24-08-2009 DIL © by SEMIKRON SKM 100GD063DL UL recognized file no E 63 532 L '8 L 5 '8 24-08-2009 DIL © by SEMIKRON