SKM 400GA173D . 6 13 7* # Absolute Maximum Ratings Symbol Conditions IGBT Values .9 6 13 7* *8 &* /422 .9 6 /32 7* &*= . 6 13 7* ;;2 + . 6 <2 7* 022 + $22 + &*=61%&* ? 12 >8 SEMITRANS® 4 IGBT Modules ** 6 /122 @ >8 *8 B /422 A 12 @ .9 6 /13 7* /2 C . 6 13 7* 022 + . 6 <2 7* 122 + $22 + 1E22 + 322 + ' ;2 DDD F /32 7* ' ;2 DDD F /13 7* Inverse Diode &( .9 6 /32 7* &(= &(=61%&( SKM 400GA173D &( 6 /2 @ D SKM 400GA173D1S Module .9 6 /32 7* &= .9 . Features ! "! # $ % & ' # ( ) # *+ & " ,-* , * - .! /0 12 Typical Applications +* 343'432 +* ,* " 432'/122 ,* 5" # Units +* / D ;222 . 6 13 7* # Characteristics Symbol Conditions IGBT >8 &*8 >8 6 *8 &* >8 62 6 12 + *8 6 *8 *82 *8 *8 * * >8 6 /3 &* 6 022 + *8 6 13 >8 >8 6 /3 62 8 ## # >8 =>## 6 1 G 8## =9' &>-. max. ;< 33 $1 2/ 20 .9 6 13 7* /$3 /E .9 6 /13 7* /E 1/3 Units + .9 6 137* E $$ G .9 6 /137* /$ E3 G .9 6 137* D 0 0E .9 6 /137* D ;0 3 # 6 / H ;; 03 ( ( / ( 002 * 332 /12 /<2 <32 32 J /22 J 6 2 DDDF/3 => 6 1 G typ. .9 6 13 7* * I> min. 6 /122 &*6 022+ .9 6 /13 7* >8 6 ? /3 ** 223 KLM GA 1 15-09-2006 RAA © by SEMIKRON SKM 400GA173D Characteristics Symbol Conditions Inverse Diode ( 6 &( 6 022 +@ 8* min. >8 62 (2 ( SEMITRANS® 4 &== I &( 6 022 + L 6 /322 +LC 8 >8 =9', IGBT Modules 6 '/3 @ ** .9 6 13 7* D /E 1; .9 6 /13 7* /0 /3 .9 6 /13 7* 1E 01 .9 6 /13 7* /42 41 $ % & ' # ( ) # *+ & " G + C* J 2/4 /3 D ' =' O $ $ ; 14 6 /122 SKM 400GA173D "! # 11 Units KLM Module =**NF88N Features ! max. .9 6 /13 7* D *8 SKM 400GA173D1S typ. 12 .6 13 7* 2/< G .6 /13 7* 211 G 220< KLM 0 3 13 // 3 1 002 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. ,-* , * - .! /0 12 Typical Applications +* 343'432 +* ,* " 432'/122 ,* 5" # GA 2 15-09-2006 RAA © by SEMIKRON SKM 400GA173D SEMITRANS® 4 Zth Symbol Zth(j-c)l Conditions Values Units = = = = 6/ 61 60 6; 6/ 61 60 0; /10 14 / 210E3 222;; 222< OLM OLM OLM OLM 6; 2 = = = = 6/ 61 60 6; 6/ 61 60 /0$ 1< 3 / 22441 22/;< 2222< OLM OLM OLM OLM 6; 2223 Zth(j-c)D IGBT Modules SKM 400GA173D SKM 400GA173D1S Features ! "! # $ % & ' # ( ) # *+ & " ,-* , * - .! /0 12 Typical Applications +* 343'432 +* ,* " 432'/122 ,* 5" # GA 3 15-09-2006 RAA © by SEMIKRON SKM 400GA173D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 15-09-2006 RAA © by SEMIKRON SKM 400GA173D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 15-09-2006 RAA © by SEMIKRON SKM 400GA173D * , 3E >+ 6 * , 3E 15-09-2006 RAA © by SEMIKRON