June 2008 FDG6322C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SuperSOTTM-6 SOT-23 G2 SO-8 SOT-8 S2 SOIC-14 6 1 Q1 D1 5 2 pin 1 SC70-6 S1 G1 D2 Q2 3 4 Mark: .22 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current TA = 25oC unless other wise noted N-Channel P-Channel Units 25 -25 V 8 -8 V - Continuous 0.22 -0.41 A - Pulsed 0.65 -1.2 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) (Note 1) 0.3 W -55 to 150 °C 6 kV 415 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 2008 Fairchild Semiconductor Corporation (Note1) FDG6322C Rev.F1 DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type Min N-Ch 25 -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA P-Ch ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC N-Ch 25 ID = -250 µA, Referenced to 25 oC P-Ch -22 N-Ch IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS= 0 V, IDSS Zero Gate Voltage Drain Current VDS =-20 V, VGS = 0 V, IGSS Gate - Body Leakage Current V mV/oC 1 TJ = 55°C µA 10 P-Ch -1 VGS = 8 V, VDS = 0 V N-Ch 100 nA VGS = -8 V, VDS = 0 V P-Ch -100 nA N-Ch 0.65 0.85 1.5 V -0.65 -0.82 -1.5 TJ = 55°C µA -10 ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA P-Ch ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C N-Ch -2.1 ID= -250 µA, Referenced to 25 o C P-Ch 2.1 VGS = 4.5 V, ID = 0.22 A N-Ch 2.6 4 5.3 7 RDS(ON) Static Drain-Source On-Resistance TJ =125°C VGS = 2.7 V, ID = 0.19 A VGS = -4.5 V, ID = -0.41 A P-Ch TJ =125°C VGS = -2.7 V, ID = -0.25 A ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance mV/ oC 3.7 5 0.85 1.1 1.2 1.9 1.15 1.5 N-Ch 0.22 VGS = -4.5 V, VDS = -5 V P-Ch -0.41 VDS = 5 V, ID= 0.22 A N-Ch 0.2 VDS = -5 V, ID = -0.5 A P-Ch 0.9 N-Channel N-Ch 9.5 VDS = 10 V, VGS = 0 V, P-Ch 62 f = 1.0 MHz N-Ch 6 Ω A S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance P-Channel P-Ch 34 VDS = -10 V, VGS = 0 V, N-Ch 1.3 f = 1.0 MHz P-Ch 10 pF FDG6322C Rev.F1 Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type tD(on) Turn - On Delay Time N-Channel VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω tr tD(off) tf Qg Qgs Qgd Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Min Typ Max Units N-Ch 5 10 nS P-Ch 7 15 N-Ch 4.5 10 P-Ch 8 16 P-Channel N-Ch 4 8 VDD = -5 V, ID = -0.5 A, P-Ch 55 80 VGS = -4.5 V, RGEN = 50 Ω N-Ch 3.2 7 P-Ch 35 60 N-Channel N-Ch 0.29 0.4 VDS= 5 V, ID = 0.22 A, P-Ch 1.1 1.5 VGS = 4.5 V N-Ch 0.12 P- Channel P-Ch 0.31 VDS = -5 V, ID = -0.41 A, N-Ch 0.03 VGS = -4.5 V P-Ch 0.29 nS nS nS nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A (Note 2) (Note 2) N-Ch 0.25 P-Ch -0.25 N-Ch 0.8 1.2 P-Ch -0.85 -1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA = 415OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6322C Rev.F1 Typical Electrical Characteristics: N-Channel 5 VGS =4.5V 3.5V R DS(ON), NORMALIZED 0.4 3.0V 2.7V 0.3 2.5V 0.2 2.0V 0.1 0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 0.5 4.5 1 2 3 4 2.7V 3.0V 3.5 3.5V 3 4.0V 5 0 0.1 Figure 1. On-Region Characteristics. 0.3 0.4 20 I D = 0.22A 1.6 RDS(ON), ON-RESISTANCE(OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 V GS = 4.5V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 ID = 0.10A 16 12 8 TA =125°C 4 25°C 0 150 1 2 J 3 4 5 VGS ,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TJ = -55°C VDS = 5V I S , REVERSE DRAIN CURRENT (A) 0.4 0.2 I D , DRAIN CURRENT (A) 5.0V I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) 25°C 125°C 0.15 0.1 0.05 0 0.5 4.5V 2.5 2 0 VGS = 2.5V 4 VGS = 0V 0.1 TJ = 125°C 0.01 25°C 0.0001 1 1.5 2 2.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 -55°C 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6322C.Rev F1 Typical Electrical Characteristics: N-Channel (continued) 30 VDS = 5V I D = 0.22A 10V 5 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 6 4 3 2 15 Ciss 8 Coss 5 Crss f = 1 MHz VGS = 0 V 3 1 2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.3 10 25 50 0.3 RD S( O L N) IM 10m s IT 1s 0.1 10 V GS = 4.5V SINGLE PULSE RθJA = 415 °C/W T A = 25°C 0.8 2 SINGLE PULSE R θJA=415°C/W TA= 25°C 40 100 ms POWER (W) I D , DRAIN CURRENT (A) 1 0.01 0.4 3 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 0.03 1 V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) s 30 20 DC 10 5 10 25 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 40 0 0.0001 0.001 0.01 0.1 1 10 200 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. FDG6322C Rev.F1 Typical Electrical Characteristics: P-Channel 2.5 VGS =-4.5V -3.0V -2.7V R DS(ON) , NORMALIZED -2.5V 0.9 0.6 -2.0V 0.3 -1.5V DRAIN-SOURCE ON-RESISTANCE -ID , DRAIN-SOURCE CURRENT (A) 1.2 VGS = -2.0V 2 -2.5V 1.5 -2.7V -3.0V -3.5V -4.5V 1 0.5 0 0 1 2 3 0 4 0.2 0.4 R DS(ON),ON-RESISTANCE(OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 1.2 5 1.6 I D = -0.41A V GS = -4.5V 1.4 1.2 1 0.8 0.6 -50 I D = -0.2A 4 3 2 TJ = 125 ° C 1 25° C 0 -25 0 25 50 75 100 125 150 1 2 TJ , JUNCTION TEMPERATURE (°C) 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 1 -I S , REVERSE DRAIN CURRENT (A) 1 TJ = -55°C VDS = -5V 25°C -ID , DRAIN CURRENT (A) 0.8 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. Figure 11. On-Region Characteristics. 0.8 125°C 0.6 0.4 0.2 0 0.5 0.6 -I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 3 VGS = 0V TJ = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6322C Rev.F1 Typical Electrical Characteristics: P-Channel (continued) 200 -V GS , GATE-SOURCE VOLTAGE (V) 5 I D = -0.41A VDS = -5V -10V 4 80 CAPACITANCE (pF) 1 -15V 3 2 Ciss 30 Coss 10 5 3 0.1 0 0 0.4 0.8 1.2 1.6 0.3 Figure 17. Gate Charge Characteristics. 5 10 25 50 1 0.5 S RD (O N) LI 1m s 10 ms T MI 10 0m s 1s 10 s DC 0.1 VGS = -4.5V SINGLE PULSE RθJA = 415°C A A = 25°C T 0.2 0.5 SINGLE PULSE R θJA=415°C/W TA= 25°C 40 POWER (W) -I D , DRAIN CURRENT (A) 2 Figure 18. Capacitance Characteristics. 3 0.01 0.1 1 -VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 0.05 Crss f = 1 MHz V GS = 0 V 1 30 20 10 1 2 5 10 25 - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. 40 0 0.0001 0.001 0.01 0.1 1 10 200 SINGLE PULSE TIME (SEC) Figure 20. Single Pulse Maximum Power Dissipation. FDG6322C Rev.F1 Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA =415 °C/W 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * R θJA (t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.002 0.0001 0.001 0.01 0.1 1 10 100 200 t 1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com