BUF460AV NPN TRANSISTOR POWER MODULE ■ ■ ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: ■ MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CEV Parameter Collector-Emitter Voltage (VBE = -5 V) V CEO(sus) Collector-Emitter Voltage (IB = 0) VEBO IC I CM IB I BM 450 V V Collector Current 80 A Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (tp = 10 ms) o T otal Dissipation at Tc = 25 C Storage Temperature July 1997 V 7 P tot Tj Un it 1000 Emitter-Base Voltage (IC = 0) T s tg V ISO Valu e 160 A 18 A 27 A 270 W -65 to 150 o C Max O peration Junction Temperature 150 o C Insulation W ithstand Voltage (AC-RMS) 2500 V 1/7 BUF460AV THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max 0.41 o C/W Max 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter hFE∗ V BE(s at)∗ di C /dt Max. Un it o 0.2 2 mA mA o 0.2 2 mA mA 1 mA Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV T j = 100 C Collector Cut-off Current (V BE = -1.5V) V CE = V CEV V CE = V CEV T j = 100 C Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(SUS) * Collector-Emitter Sustaining Voltage V CE(sat )∗ Test Cond ition s Min. 450 I C = 0.2 A L = 25 mH V c la mp = 450 V DC Current G ain I C = 60 A V CE = 5 V Collector-Emitter Saturation Voltage IC IC IC IC IB IB IB IB = = = = 30 30 60 60 A A A A = = = = V 15 0.35 3A o 3 A Tj = 100 C 12 A o 12 A T j = 100 C I B = 12 A I B = 12 A Typ . Base-Emitter Saturation Voltage I C = 60 A I C = 60 A Rate of Rise of On-state Collector V CC = 300 V R C = 0 I B1 = 18 A T j = 100 o C 1.5 V V 0.5 1.1 o T j = 100 C tp = 3 µs 2 V V V V 2 150 A/µs V CE (3 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V R C = 30 Ω I B1 = 18 A T j = 100 o C 4 6 V V CE (5 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V R C = 30 Ω o I B1 = 18 A T j = 100 C 2 3 V 4.5 0.1 0.3 5 0.2 5 µs µs µs ts tf tc V CEW Storage Time Fall T ime Cross-over T ime I C = 30 A V BB = -5 V V c la mp = 400 L = 25 µH Maximum Collector Emitter Voltage Without Snubber I CW off = 80 A I B1 = 16 A V BB = -5 V V CC = 50 V L = 80 µH R BB = 0.2 Ω T j = 125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 VCC = 50 V R BB = 0.2 Ω V I B1 = 3 A o Tj = 100 C 400 V BUF460AV Safe Operating Areas Thermal Impedance Derating Curve Collector-Emitter Voltage Versus Base-Emitter Resistance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUF460AV Reverse Biased SOA Forward Biased SOA Reverse Biased SOA Forward Biased SOA Switching Time Inductive Load Switching Time Inductive Load Versus Temperature 4/7 BUF460AV DC Current Gain Turn-off Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Turn-on Switching Waveforms. Turn-off Switching Test Circuit 1) Fast electronic switch 3) Fast recovery rectifier Turn-off Switching Waveforms. 2) Non-inductive Resistor 5/7 BUF460AV ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O H J C K L M 6/7 F E D N BUF460AV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7