STMICROELECTRONICS BUF460

BUF460AV
NPN TRANSISTOR POWER MODULE
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EASY TO DRIVE TECHNOLOGY (ETD)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
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MOTOR CONTROL
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SMPS & UPS
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WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V CEV
Parameter
Collector-Emitter Voltage (VBE = -5 V)
V CEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO
IC
I CM
IB
I BM
450
V
V
Collector Current
80
A
Collector Peak Current (tp = 10 ms)
Base Current
Base Peak Current (tp = 10 ms)
o
T otal Dissipation at Tc = 25 C
Storage Temperature
July 1997
V
7
P tot
Tj
Un it
1000
Emitter-Base Voltage (IC = 0)
T s tg
V ISO
Valu e
160
A
18
A
27
A
270
W
-65 to 150
o
C
Max O peration Junction Temperature
150
o
C
Insulation W ithstand Voltage (AC-RMS)
2500
V
1/7
BUF460AV
THERMAL DATA
R t hj-ca se
R thc -h
Thermal Resistance Junction-case
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
0.41
o
C/W
Max
0.05
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CER
I CEV
I EBO
Parameter
hFE∗
V BE(s at)∗
di C /dt
Max.
Un it
o
0.2
2
mA
mA
o
0.2
2
mA
mA
1
mA
Collector Cut-off
Current (R BE = 5 Ω)
V CE = V CEV
V CE = V CEV
T j = 100 C
Collector Cut-off
Current (V BE = -1.5V)
V CE = V CEV
V CE = V CEV
T j = 100 C
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(SUS) * Collector-Emitter
Sustaining Voltage
V CE(sat )∗
Test Cond ition s
Min.
450
I C = 0.2 A
L = 25 mH
V c la mp = 450 V
DC Current G ain
I C = 60 A
V CE = 5 V
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IB
IB
IB
IB
=
=
=
=
30
30
60
60
A
A
A
A
=
=
=
=
V
15
0.35
3A
o
3 A Tj = 100 C
12 A
o
12 A T j = 100 C
I B = 12 A
I B = 12 A
Typ .
Base-Emitter
Saturation Voltage
I C = 60 A
I C = 60 A
Rate of Rise of
On-state Collector
V CC = 300 V R C = 0
I B1 = 18 A T j = 100 o C
1.5
V
V
0.5
1.1
o
T j = 100 C
tp = 3 µs
2
V
V
V
V
2
150
A/µs
V CE (3 µs)•• Collector-Emitter
Dynamic Voltage
V CC = 300 V R C = 30 Ω
I B1 = 18 A T j = 100 o C
4
6
V
V CE (5 µs)•• Collector-Emitter
Dynamic Voltage
V CC = 300 V R C = 30 Ω
o
I B1 = 18 A T j = 100 C
2
3
V
4.5
0.1
0.3
5
0.2
5
µs
µs
µs
ts
tf
tc
V CEW
Storage Time
Fall T ime
Cross-over T ime
I C = 30 A
V BB = -5 V
V c la mp = 400
L = 25 µH
Maximum Collector
Emitter Voltage
Without Snubber
I CW off = 80 A I B1 = 16 A
V BB = -5 V V CC = 50 V
L = 80 µH R BB = 0.2 Ω
T j = 125 o C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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VCC = 50 V
R BB = 0.2 Ω
V I B1 = 3 A
o
Tj = 100 C
400
V
BUF460AV
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-Emitter Voltage Versus
Base-Emitter Resistance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUF460AV
Reverse Biased SOA
Forward Biased SOA
Reverse Biased SOA
Forward Biased SOA
Switching Time Inductive Load
Switching Time Inductive Load Versus
Temperature
4/7
BUF460AV
DC Current Gain
Turn-off Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
Turn-on Switching Waveforms.
Turn-off Switching Test Circuit
1) Fast electronic switch
3) Fast recovery rectifier
Turn-off Switching Waveforms.
2) Non-inductive Resistor
5/7
BUF460AV
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
0.157
0.157
8.2
0.307
0.322
A
G
B
O
H
J
C
K
L
M
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F
E
D
N
BUF460AV
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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