STMICROELECTRONICS STB70NF3LLT4

STB70NF3LL
N-channel 30V - 0.0075Ω - 70A - D2PAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB70NF3LL
30V
< 0.0095Ω
70A
■
Optimal RDS(on) x Qg trade-off @ 4.5V
■
Conduction losses reduced
■
Switching losses reduced
3
1
D²PAK
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB70NF3LLT4
July 2006
Marking
Package
2
D PAK
B70NF3LL@
Rev 7
Packaging
Tape & reel
1/13
www.st.com
13
Contents
STB70NF3LL
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
................................................ 8
STB70NF3LL
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
30
V
Drain-gate voltage (RGS = 20 kΩ)
30
V
± 16
V
VGS
Gate- source voltage
ID(1)
Drain current (continuous) at TC = 25°C
70
A
ID
Drain current (continuous) at TC = 100°C
50
A
Drain current (pulsed)
280
A
Total dissipation at TC = 25°C
100
W
Derating factor
0.67
W/°C
Peak diode recovery voltage slope
5.5
V/ns
Single pulse avalanche energy
500
mJ
-55 to 175
°C
Value
Unit
IDM
(2)
PTOT
(3)
dv/dt
EAS
(4)
Tstg
TJ
Storage temperature
Operating junction temperature
1. Current limited by the package
2. Pulse width limited by safe operating area
3.
ISD ≤70A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX
4.
Starting TJ = 25 oC, ID = 35A, VDD = 25V
Table 2.
Symbol
Thermal data
Parameter
RthJC
Thermal resistance junction-case Max
1.5
°C/W
RthJA
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
3/13
Electrical characteristics
2
STB70NF3LL
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Drain-source
Breakdown voltage
ID = 250 µA, VGS = 0
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS = Max rating
TC = 125°C
IGSS
Gate-body leakage
Current (VDS = 0)
VGS = ± 16 V
VGS(th)
Gate threshold voltage
VDS = VGS
ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V
VGS = 4.5V
ID = 35A
ID = 18A
V(BR)DSS
Table 4.
Symbol
gfs
Ciss
Coss
Crss
4/13
Test conditions
Min
Typ
Max
30
Unit
V
1
10
µA
µA
±100
nA
1
V
0.0075 0.0095
0.010 0.012
Ω
Ω
Dynamic
Parameter
Test conditions
Forward
Transconductance
VDS = 15V
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V f = 1MHz VGS = 0
ID = 35A
Min
Typ
Max
Unit
25
S
1650
540
130
pF
pF
pF
STB70NF3LL
Electrical characteristics
Table 5.
Symbol
td(on)
tr
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
ID = 35A
VDD = 15V
VGS = 4.5V
RG = 4.7Ω
(Resistive Load Figure 16)
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 15V ID= 70A
VGS= 4.5V
td(off)
tf
Turn-off delay time
Fall time
Table 6.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
Min
Typ
Max
23
165
24
8.5
12
ns
ns
33
27
28
VDD = 15 V
ID = 35 A
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load Figure 16)
Unit
nC
nC
nC
ns
ns
Source drain diode
Parameter
Test conditions
Min
Typ
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 70 A
VGS = 0
Reverse recovery time
ISD = 70 A di/dt = 100A/µs
TJ = 150°C
Reverse recovery charge VDD = 20 V
Reverse recovery current (see test circuit Figure 14)
42
52
2.5
Max
Unit
70
280
A
A
1.3
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
5/13
Electrical characteristics
STB70NF3LL
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Source-drain diode forward
characteristics
Figure 6.
Static drain-source on resistance
6/13
STB70NF3LL
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Normalized breakdown vs
temperature
7/13
Test circuit
3
STB70NF3LL
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/13
STB70NF3LL
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB70NF3LL
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
10/13
STB70NF3LL
5
Packing mechanical data
Packing mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
11/13
Revision history
6
STB70NF3LL
Revision history
Table 7.
12/13
Revision history
Date
Revision
Changes
21-Jun-2004
6
Preliminary version
25-Jul-2006
7
New template, no content change
STB70NF3LL
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